N-Ge低阻III-V异质接触
Low Resistance III-V Hetero-contacts to N-Ge
摘要：
我们实验研究了III-V/Ge异质结，并展示了InGaAs异质接触到n-Ge与宽范围的In %，并实现了低接触电阻率（$ρ_C$）的$5\times10^{-8} Ω\cdot cm^2$为$3 \times 10^{19} cm^{-3}$的Ge掺杂。这是由于重定向导带附近的电荷中性能级（CNL），并受益于高电子透射的低有效质量。对于第一次，我们观察到，异质界面呈现出没有温度依赖性，尽管两个不同的导电最小谷的位置III-V族（$Γ$ -谷）和Ge（L-谷），这可能源于弹性陷阱辅助隧穿通过位错产生的界面处的缺陷态。异质界面在低于$\approx 1 \times 10^{-7} Ω\cdot cm^2$的整个$ρ_C$中起主导作用，这可以通过共掺杂在Ge中具有大的活性掺杂剂浓度来进一步改善。
英文摘要：
We experimentally study III-V/Ge heterostructure and demonstrate InGaAs hetero-contacts to n-Ge with a wide range of In % and achieve low contact resistivity ($ρ_C$) of $5\times10^{-8} Ω\cdot cm^2$ for Ge doping of $3 \times 10^{19} cm^{-3}$. This results from re-directing the charge neutrality level (CNL) near the conduction band and benefiting from low effective mass for high electron transmission. For the first time, we observe that the heterointerface presents no temperature dependence despite the two different conduction minimum valley locations of III-V ($Γ$-valley) and Ge (L-valley), which potentially stems from elastic trap-assisted tunneling through defect states at the interface generated by dislocations. The hetero-interface plays a dominant role in the overall $ρ_C$ below $\approx 1 \times 10^{-7} Ω\cdot cm^2$, which can be further improved with large active dopant concentration in Ge by co-doping.
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