发表机构
National Laboratory of the Rockies; Colorado School of Mines（落基山国家实验室; 科罗拉多矿业学院）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过分子束外延生长低缺陷、轻掺杂 NiO 接触层，优化生长速率以降低 β-Ga₂O₃ 异质结二极管导通电阻，实现低至 25 mΩ-cm² 的比导通电阻和原子级陡峭界面，为 kV 级功率器件提供新途径。
AI 中文摘要
NiO 是许多半导体技术中使用的最重要的 p 型氧化物接触材料之一。然而，当前的 NiO 生长方法可能引起界面损伤，从而降低器件性能。在基于 AlGaN 和 Ga₂O₃ 等超宽禁带（UWBG）半导体（用于电力电子应用）实现 NiO 异质结二极管和晶体管时，界面的精细控制尤为重要。在此，我们报告了如何利用分子束外延实现用于 β-Ga₂O₃ 二极管的低缺陷、轻掺杂 NiO 接触层。尽管高温生长并未显著降低二极管的导通电阻，但将生长速率提高至 600 nm/hr 可在不降低薄膜质量的情况下，降低 p⁻-NiO/β-Ga₂O₃ 异质结二极管的导通电阻。在 NiO 生长速率为 380 nm/hr 时，具有 35 nm 厚 p⁻-NiO 层的未优化二极管表现出器件平均比导通电阻为 1.46 Ω-cm²，理想因子为 1.46。在该条件下生长的单个器件显示出低至 25 mΩ-cm² 的比导通电阻，整流比为 2.7×10⁶。扫描透射电子显微镜成像显示，(100) NiO/(100) β-Ga₂O₃ 界面是共格且原子级陡峭的。这些结果为优化 NiO 界面开辟了新途径，以生产基于 β-Ga₂O₃ 和其他 UWBG 半导体的稳健、具有竞争力的 kV 级电力电子器件。
英文摘要
NiO is one of the most important p-type oxide contact materials used in many semiconductor technologies. However, current NiO growth methods can induce interfacial damage that diminishes device performance. Fine control of interfaces is especially important in implementing NiO heterojunction diodes and transistors based on ultra wide band gap (UWBG) semiconductors such as AlGaN and Ga_{2}O_{3} used for power electronic applications. Here, we report on how molecular beam epitaxy can be used to achieve low-defect, lightly doped NiO contact layers for a β-Ga_{2}O_{3} diodes. Although high-temperature growth does not measurably decrease the on-state resistance of the diode, increased growth rates up to 600 nm/hr lower on-state resistance in p-- NiO / β-Ga_{2}O_{3} heterojunction diodes without reducing film quality. At a NiO growth rate of 380 nm/hr, unoptimized diodes with 35 nm thick p-- NiO layers demonstrate a device-average specific on-state resistance of 1.46 Ω-cm^{2} and an ideality factor of 1.46. Individual devices grown at this condition show specific on-state resistance as low as 25 mΩ-cm2 with a rectification ratio of 2.7x106. Scanning transmission electron microscopy imaging reveals the (100) NiO/ (100) β-Ga_{2}O_{3} interface is coherent and atomically abrupt. These results open a new avenue to optimizing the NiO interface to produce robust, competitive kV-class power electronic devices based on β-Ga_{2}O_{3} and other UWBG semiconductors.
