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arXiv 2106.00341quant-ph
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利用倒装芯片技术实现的带隙transmon量子比特

Vacuum-gap transmon qubits realized using flip-chip technology

Xuegang Li, Yingshan Zhang, Chuhong Yang, Zhiyuan Li, Junhua Wang, Tang Su, Mo Chen, Yongchao Li, Chengyao Li, Zhenyu Mi, Xuehui Liang, Chenlu Wang, Zhen Yang, … 展开作者

Xuegang Li, Yingshan Zhang, Chuhong Yang, Zhiyuan Li, Junhua Wang, Tang Su, Mo Chen, Yongchao Li, Chengyao Li, Zhenyu Mi, Xuehui Liang, Chenlu Wang, Zhen Yang, Yulong Feng, Kehuan Linghu, Huikai Xu, Jiaxiu Han, Weiyang Liu, Peng Zhao, Teng Ma, Ruixia Wang, Jingning Zhang, Yu Song, Pei Liu, Ziting Wang, Zhaohua Yang, Guangming Xue, Yirong Jin, Haifeng Yu

摘要:

基于倒装芯片技术构建大规模超导量子处理器取得重大进展。在这项工作中,我们使用倒装芯片技术来实现一个修改的transmon量子比特,捐赠的“flipmon”,其大的并联电容器被替换为真空间隙平行板电容。为了进一步减少量子位的足迹,我们将一个量子位焊盘和一个单一的约瑟夫森结放在底部芯片上,另一个焊盘放在顶部芯片上,顶部芯片通过铟凸块与单一的约瑟夫森结电连接。当真空间隙约为5微米时,空气中的电场参与率可以达到近53%,从而潜在地导致较低的介电损耗。的翻转激元的相干时间测量的范围内的30-60微秒,这是与传统的transmons具有类似的制造工艺。电场模拟表明,金属-空气界面的参与率显著增加,并可能主导量子比特的退相干。这表明需要考虑更仔细的表面处理。没有证据表明,铟凸点内的翻转激元引起显着的退相干。通过精心设计的几何形状和良好的表面处理,可以进一步提高脚蹼的连贯性。

英文摘要:

Significant progress has been made in building large-scale superconducting quantum processors based on flip-chip technology. In this work, we use the flip-chip technology to realize a modified transmon qubit, donated as the "flipmon", whose large shunt capacitor is replaced by a vacuum-gap parallel plate capacitor. To further reduce the qubit footprint, we place one of the qubit pads and a single Josephson junction on the bottom chip and the other pad on the top chip which is galvanically connected with the single Josephson junction through an indium bump. The electric field participation ratio can arrive at nearly 53% in air when the vacuum-gap is about 5 microns, and thus potentially leading to a lower dielectric loss. The coherence times of the flipmons are measured in the range of 30-60 microseconds, which are comparable with that of traditional transmons with similar fabrication processes. The electric field simulation indicates that the metal-air interface's participation ratio increases significantly and may dominate the qubit's decoherence. This suggests that more careful surface treatment needs to be considered. No evidence shows that the indium bumps inside the flipmons cause significant decoherence. With well-designed geometry and good surface treatment, the coherence of the flipmons can be further improved.

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