关于二维衬底上畴生长速率常数的定义
On the definition of the domain growth rate constant on a two dimensional substrate
摘要：
在化学气相沉积（CVD）方法中，通过将衬底上的扩散表面结合物质附着到固体域的岛来生长域。我们制定的二维扩散下的单畴生长的过程中，考虑到域边界的运动。我们首先讨论两种类型的定义的域面积生长速率常数;一个定义通过域的大小除以CVD生长的持续时间和其他定义通过除以时间的面积。然后，我们表明，域的大小与时间成正比的反应限制的增长和域的面积与时间成正比的扩散限制的增长。我们还表明，域面积的增长率的变化从反应限制的增长扩散限制的增长作为域的大小增加超过一个特征尺寸。
英文摘要：
In chemical vapor deposition (CVD) methods, the domain grows by attachment of diffusing surface bound species on the substrate to an island of solid domain. We formulate the process of single domain growth under two-dimensional diffusion by taking into account the movement of the domain boundary. We first discuss two types of definition of the domain area growth rate constant; the one defined through the domain size divided by the time duration of CVD growth and the other defined through the area divided by time. Then, we show that the domain size is proportional to time for the reaction limited growth and the domain area is proportional to time for the diffusion limited growth. We also show that the domain area growth rate changes from the reaction limited growth to the diffusion limited growth as the domain size increases beyond a characteristic size.
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