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arXiv 1112.2175cond-mat.stat-mech
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一维平面衬底上KPZ生长的普适涨落

Universal fluctuations in KPZ growth on one-dimensional flat substrates

T. J. Oliveira, S. C. Ferreira, S. G. Alves

摘要:

我们提出了一个数值研究的高度分布(HDs)的演化属于Kardar-Parisi-Zhang(KPZ)普适类的界面生长模型。生长在最初平坦的衬底上进行。所有研究模型得到的HD非常好地拟合理论预测的高斯正交包络(GOE)分布。第一个累积量有一个位移,消失为$t^{-1/3}$,而$2\le n\le 4$阶累积量收敛到GOE为$t^{-2/3}$或更快,以前在其他KPZ系统中观察到的行为。这些结果产生了一个新的证据,在平坦衬底上的KPZ生长的GOE分布的普遍性。最后,我们进一步表明,表面描述的Airy $_{1}$过程。

英文摘要:

We present a numerical study of the evolution of height distributions (HDs) obtained in interface growth models belonging to the Kardar-Parisi-Zhang (KPZ) universality class. The growth is done on an initially flat substrate. The HDs obtained for all investigated models are very well fitted by the theoretically predicted Gaussian Orthogonal Ensemble (GOE) distribution. The first cumulant has a shift that vanishes as $t^{-1/3}$, while the cumulants of order $2\le n\le 4$ converge to GOE as $t^{-2/3}$ or faster, behaviors previously observed in other KPZ systems. These results yield a new evidence for the universality of the GOE distribution in KPZ growth on flat substrates. Finally, we further show that the surfaces are described by the Airy$_{1}$ process.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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