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arXiv 1502.01517cond-mat.stat-mechcond-mat.mtrl-sci
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温度对(2+1)实验Kardar-Parisi-Zhang生长的影响

Temperature effect on (2+1) experimental Kardar-Parisi-Zhang growth

R. A. L. Almeida, S. O. Ferreira, I. R. B. Ribeiro, T. J. Oliveira

摘要:

研究了衬底温度对沉积在Si(001)衬底上的多晶CdTe薄膜局域结构和长波长涨落的影响。一个强大的T-依赖丘的演变观察和解释的晶界处的晶粒间扩散的能量势垒,证实了蒙特卡罗模拟。这导致从不相关的增长过渡到从随机到相关的增长和瞬态异常缩放的交叉T增加。由于这些有限时间效应,我们不能通过临界指数确定系统的普适类。然而,我们证明,这可以通过分析高度,粗糙度和最大高度分布,这使我们能够证明,CdTe的增长渐近根据Kardar-Parisi-Zhang(KPZ)方程在很宽的T范围。更重要的是,人们发现在低(高)T下生长的正(负)速度过剩,这表明可以通过调节温度来控制KPZ非线性。

英文摘要:

We report on the effect of substrate temperature (T) on both local structure and long-wavelength fluctuations of polycrystalline CdTe thin films deposited on Si(001). A strong T-dependent mound evolution is observed and explained in terms of the energy barrier to inter-grain diffusion at grain boundaries, as corroborated by Monte Carlo simulations. This leads to transitions from uncorrelated growth to a crossover from random-to-correlated growth and transient anomalous scaling as T increases. Due to these finite-time effects, we were not able to determine the universality class of the system through the critical exponents. Nevertheless, we demonstrate that this can be circumvented by analyzing height, roughness and maximal height distributions, which allow us to prove that CdTe grows asymptotically according to the Kardar-Parisi-Zhang (KPZ) equation in a broad range of T. More important, one finds positive (negative) velocity excess in the growth at low (high) T, indicating that it is possible to control the KPZ non-linearity by adjusting the temperature.

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