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arXiv 2104.07730cond-mat.mes-hallquant-ph
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Si和Ge双量子点中空穴的相互作用:从多带方法到有效自旋图象

Interacting holes in Si and Ge double quantum dots: from a multiband approach to an effective-spin picture

Andrea Secchi, Laura Bellentani, Andrea Bertoni, Filippo Troiani

摘要:

隧道耦合半导体量子点中两个电子的态可以用具有各向同性海森堡相互作用的双自旋哈密顿量来描述。由于空穴的多带特性和自旋-轨道耦合,空穴的多带特性和自旋-轨道耦合混合了轨道自由度和自旋自由度,并分裂了$J=3/2$和$J = 1/2$多重态,因此需要将类似的描述推广到空穴的情况。本文通过不同的理论方法研究了典型的耦合Si和Ge量子点中的双空穴态。多带$\boldsymbol{k}\cdot\boldsymbol{p}$和双光子相互作用计算与纠缠测量相结合,以彻底表征的两个空穴态的能带混合和证明的有效自旋表示,我们从广义哈伯德模型解析推导。我们发现,在弱interdot制度,基态和第一激发多重态的两个空穴系统显示-不像他们的电子同行-高度的$J$混合,即使在纯粹的重空穴状态的限制。轻空穴组件还诱导$M$ -混合和弱耦合旋量特征在于不同的置换对称性。

英文摘要:

The states of two electrons in tunnel-coupled semiconductor quantum dots can be effectively described in terms of a two-spin Hamiltonian with an isotropic Heisenberg interaction. A similar description needs to be generalized in the case of holes due to their multiband character and spin-orbit coupling, which mixes orbital and spin degrees of freedom, and splits $J=3/2$ and $J = 1/2$ multiplets. Here we investigate two-hole states in prototypical coupled Si and Ge quantum dots via different theoretical approaches. Multiband $\boldsymbol{k}\cdot\boldsymbol{p}$ and Configuration-Interaction calculations are combined with entanglement measures in order to thoroughly characterize the two-hole states in terms of band mixing and justify the introduction of an effective spin representation, which we analytically derive a from generalized Hubbard model. We find that, in the weak interdot regime, the ground state and first excited multiplet of the two-hole system display -- unlike their electronic counterparts -- a high degree of $J$-mixing, even in the limit of purely heavy-hole states. The light-hole component additionally induces $M$-mixing and a weak coupling between spinors characterized by different permutational symmetries.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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