用于电磁感应透明的应变半导体量子点的光学特性分析
Analysis of optical properties of strained semiconductor quantum dots for electromagnetically induced transparency
摘要：
利用多带k*p理论研究了锥形半导体量子点的尺寸和几何结构对慢光特性的影响。我们发现的V型计划的电磁感应透明（EIT）是最有利的，并确定一个最佳的高度和大小，有效的EIT操作。在梯形方案的情况下，额外的偶极子允许带内跃迁的存在以及几乎等距的能级间距增加了额外的衰变途径，这显著削弱了EIT效应。我们进一步研究了应变和能带混合的影响，比较了四种不同的k*p能带结构模型。除了由于双轴应变分量的重和轻空穴的分离，我们观察到的过渡强度由于应变和带混合效应引起的价带中的能量交叉的一般减少。我们还发现了一个非平凡的量子点尺寸依赖的偶极矩直接相关的双轴应变分量。由于重空穴和轻空穴的分离，使用单带模型和八带模型计算的较低导带和最高价带态之间的光学跃迁强度显示出一般的定性一致性，与EIT操作相关的例外。
英文摘要：
Using multiband k*p theory we study the size and geometry dependence on the slow light properties of conical semiconductor quantum dots. We find the V-type scheme for electromagnetically induced transparency (EIT) to be most favorable, and identify an optimal height and size for efficient EIT operation. In case of the ladder scheme, the existence of additional dipole allowed intraband transitions along with an almost equidistant energy level spacing adds additional decay pathways, which significantly impairs the EIT effect. We further study the influence of strain and band mixing comparing four different k*p band structure models. In addition to the separation of the heavy and light holes due to the biaxial strain component, we observe a general reduction in the transition strengths due to energy crossings in the valence bands caused by strain and band mixing effects. We furthermore find a non-trivial quantum dot size dependence of the dipole moments directly related to the biaxial strain component. Due to the separation of the heavy and light holes the optical transition strengths between the lower conduction and upper most valence-band states computed using one-band model and eight-band model show general qualitative agreement, with exceptions relevant for EIT operation.
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