Two-dimensional electron gases in SrTiO3-based heterostructures provide a platform to study the real-time evolution of the macroscopic state with a variation of the carrier density, and the impact of structural properties on the emergence of the superconducting state. We have explored the isothermal evolution of the electron gas in AlOx/SrTiO3 by measuring the variation of resistance with continuous gate-voltage-controlled tuning of its carrier density. It is seen that condensation of the ordered phase leads to non-monotonic isotherms within the superconducting dome. The timescale for dynamic change following changes in gate voltage is measured across the phase transition. It is found to be tens of seconds near the onset of superconductivity, significantly larger compared to the normal state. Such a large timescale governing the kinetics of the phase transition presumably arises from the strong impact of structural defects and distortions of the substrate on the development of superconducting islands.
Carbon nanotube (CNT) Josephson junctions in the open quantum dot limit exhibit superconducting switching currents which can be controlled with a gate electrode. Shapiro voltage steps can be observed under radiofrequency current excitations, with a damping of the phase dynamics that strongly depends on the gate voltage. These measurements are described by a standard RCSJ model showing that the switching currents from the superconducting to the normal state are close to the critical current of the junction. The effective dynamical capacitance of the nanotube junction is found to be strongly gat…
The interface between the insulating oxides LaAlO3 and SrTiO3 exhibits a superconducting two-dimensional electron system that can be modulated by a gate voltage. While gating of the conductivity has been probed extensively and gating of the superconducting critical temperature has been demonstrated, the question whether, and if so how, the gate tunes the superfluid density and superconducting order parameter is unanswered. We present local magnetic susceptibility, related to the superfluid density, as a function of temperature, gate voltage and location. We show that the temperature dependence…
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport measurements in suitably designed electronic devices. Here we study transport through superconducting junctions fabricated on thin Bi2Se3 single crystals, equipped with a gate electrode. In the presence of perpendicular magnetic field B, sweeping the gate voltage enables us to observe the filling of th…
Gate tunable two-dimensional (2D) superconductors offer significant advantages when studying superconducting phase transitions. Here, we address superconductivity in exfoliated 1T'-MoTe2 monolayers with an intrinsic band gap of ~7.3 meV using electrostatic doping. Despite large differences in the dispersion of the conduction and the valence bands, superconductivity can be achieved easily for both electrons and holes. The onset of superconductivity occurs near 7-8K for both charge carrier types. This temperature is much higher than in bulk samples. Also the in-plane upper critical field is stro…
We explore the implications of Berezinskii-Kosterlitz-Thouless (BKT) critical behavior and variable-range hopping on the two dimensional (2D) quantum superconductor-insulator (QSI) transition driven by tuning the gate voltage. To illustrate the potential and the implications of this scenario we analyze sheet resistance data of Parendo et al. taken on a gate voltage tuned ultrathin amorphous bismuth film. The finite size scaling analysis of the BKT-transition uncovers a limiting length preventing the correlation length to diverge and to enter the critical regime deeply. Nevertheless the attaine…
We present a quantitative theory of the gate-voltage tuned superconductor-to-insulator transition (SIT) observed experimentally in the 2D electron liquid created in the (111) interface between crystalline SrTiO_3 and LaAlO_3 . Considering two fundamental opposing effects of Cooper-pair fluctuations; the critical conductivity enhancement, known as para-conductivity, and its suppression associated with the loss of unpaired electrons due to Cooper-pairs formation, we employ the standard thermal fluctuations theory, modified to include quantum fluctuations within a novel phenomenological approach.…
Quantum ground states which arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two-dimensional (2D) metallic behaviour often observed adjacent to superconductivity. At the superconducting LaAlO3/SrTiO3 interface, a metallic ground state emerges upon the collapse of superconductivity with field-effect gating. Strikingly, such metallicity is accompanied with a pseudogap. Here, we utilize independent control of carrier density and disorder of the interfacial superconductor using dual electrostatic ga…
The antiferromagnetic(AFM) insulator-superconductor transition has been always a center of interest in the underlying physics of unconventional superconductors. The quantum phase transition between Mott insulator with AFM and superconductor can be induced by doping charge carriers in high-Tc cuprate superconductors. For the best characterized organic superconductors of k-(BEDT-TTF)2X (X=anion), a first order transition between AFM insulator and superconductor can be tuned by applied external pressure or chemical pressure. Also, the superconducting state can be directly developed from AFM insul…
We recently presented the first superconducting quantum interference device (SQUID) with single-walled carbon nanotube (CNT) Josephson junctions [1: J. P. Cleuziou, W. Wernsdorfer, V. Bouchiat, T. Ondarcuhu and M. Monthioux, Nature Nanotech. 1, 53, (2006).], http://www.nature.com/nnano/journal/v1/n1/pdf/nnano.2006.54.pdf . We showed that quantum confinement in each junction induces a discrete quantum dot (QD) energy level structure, which can be controlled with two lateral electrostatic gates. In addition, a backgate electrode can vary the transparency of the QD barriers, thus permitting to ch…
A surprisingly strong variation of resistance with perpendicular magnetic field, and a peak in the resistance vs. field, R(B) has been found in insulating films of a sequence of homogeneous, quench-condensed films of amorphous Bi undergoing a thickness-tuned superconductor-insulator transition. Isotherms of magnetoresistance, rather than resistance, vs. field were found to cross at a well-defined magnetic field higher than the field corresponding to the peak in R(B). For all values of B, R(T) was found to obey an Arrhenius form. At the crossover magnetic field the prefactor became equal to the…
We show that the bound electron pairs (BEPs) emerge in two-dimensional gated Rashba materials owing to the interplay of the pair spin-orbit interaction, produced by the Coulomb fields of interacting electrons, and the peculiarities of the band structure giving rise to a negative reduced mass of the interacting electrons. Our consideration is based on the four-band Bernevig-Hughes-Zhang model with the Rashba spin-orbit interaction created by the charges on the gate. The binding energy of the BEP varies with the gate voltage in a wide range across the entire width of the two-particle energy gap.…
We measure the non-dissipative supercurrent in a single InAs self-assembled quantum dot (QD) coupled to superconducting leads. The QD occupation is both tuned by a back-gate electrode and lateral side-gate. The geometry of the side-gate allows tuning of the QD-lead tunnel coupling in a region of constant electron number with appropriate orbital state. Using the side-gate effect we study the competition between Kondo correlations and superconducting pairing on the QD, observing a decrease in the supercurrent when the Kondo temperature is reduced below the superconducting energy gap in qualitati…
Dissipation is ubiquitous in quantum systems, and its interplay with fluctuations is critical to maintaining quantum coherence. We experimentally investigate the dissipation dynamics in single-walled carbon nanotubes coupled to superconductors. The voltage-current characteristics display gate-tunable hysteresis, with sizes that perfectly correlate with the normal state resistance RN, indicating the junction undergoes a periodic modulation between underdamped and overdamped regimes. Surprisingly, when a device's Fermi-level is tuned through a local conductance minimum, we observe a gate-control…
Recently superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect to an unprecedented range of transition temperatures. Here we perform a detailed finite size scaling analysis to explore the compatibility of the phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-quantum phase(QP)-transition. In an intermediate regime, limited by a gate voltage dependent limiting length, we uncover remarkable consistency with a BKT-critical line ending at a metallic quantum critical point, separating a weakly locali…
The recent discovery of superconducting interfaces in the $KTaO_3 (111)$-based heterostructures is intriguing, since a much higher superconducting critical temperature (TC ~ 2 K) is achieved compared to that in the $SrTiO_3$ heterostructures (~ 300 mK). In this paper, we report the superconducting properties of $EuO/KTaO_3 (111)$ interface as a function of the interface carrier density ($n_s$). The maximum T_C is observed to be ~ 2 K at $n_s$ ~ $1\times10^{14}$ cm-2. In addition, we show that the critical current density and the upper critical magnetic field can be effectively tuned by the bac…
Coherent quantum phase slips are expected to lead to a blockade of dc conduction in sufficiently narrow superconducting nanowires below a certain critical voltage. We present measurements of NbN nanowires in which not only is a critical voltage observed, but also in which this critical voltage may be tuned using a side-gate electrode. The critical voltage varies periodically as the applied gate voltage is varied. While the observations are qualitatively as expected for quantum interference between coherent quantum phase slip elements, the period of the tuning is orders of magnitude larger than…
