The antiferromagnetic(AFM) insulator-superconductor transition has been always a center of interest in the underlying physics of unconventional superconductors. The quantum phase transition between Mott insulator with AFM and superconductor can be induced by doping charge carriers in high-Tc cuprate superconductors. For the best characterized organic superconductors of k-(BEDT-TTF)2X (X=anion), a first order transition between AFM insulator and superconductor can be tuned by applied external pressure or chemical pressure. Also, the superconducting state can be directly developed from AFM insulator by application of pressure in Cs3C60. The resemblance of these phase diagrams hints a universal mechanism governing the unconventional superconductivity in close proximity to AFM insulators. However, the superconductivity in iron-based high-Tc superconductors evolves from an AFM bad metal by doping charge carriers, and no superconductor-insulator transition has been observed so far. Here, we report a first-order transition from superconductor to insulator with a strong charge doping induced by ionic gating in the thin flakes of single crystal (Li,Fe)OHFeSe. The Tc is continuously enhanced with electron doping by ionic gating up to a maximum Tc of 43 K, and a striking superconductor-insulator transition occurs just at the verge of optimal doping with highest Tc. A novel phase diagram of temperature-gating voltage with the superconductor-insulator transition is mapped out, indicating that the superconductor -insulator transition is a common feature for unconventional superconductivity. These results help to uncover the underlying physics of iron-based superconductivity as well as the universal mechanism of high-Tc superconductivity. Our finding also suggests that the gate-controlled strong charge doping makes it possible to explore novel states of matter in a way beyond traditional methods.
How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake using solid ion conductor as the gate dielectric. By driving Li ions into and out of the (Li,Fe)OHFeSe thin flake with electric field, we obtained a dome-shaped superconducting region with optimal Tc ~ 43 K, which is separated by a quantum critical point from ferromagnetically insulating phase. The ferromagnetism arises from the long range order of the interst…
We study the insulating phase of disordered indium oxide films that undergo a field-tuned superconductor-insulator transition. The transport measurements in a perpendicular magnetic field show distinct regimes of strongly fluctuating order-parameter amplitude and phase, and reveal a wide range of insulator strength in samples with differing disorder, despite the similarity in behavior near the SIT. We characterize the strength of the insulating phase and compare it to the superconducting strength. We find that the films do not return to the expected normal state even at high perpendicular magn…
Mirror symmetric surfaces of a topological crystalline insulator host even number of Dirac surface states. A surface Zeeman field generically gaps these states leading to a quantized anomalous Hall effect. Varying the direction of Zeeman field induces transitions between different surface insulating states with any two Chern numbers between -4 and 4. In the crystal frame the phase boundaries occur for field orientations which are great circles with (111)-like normals on a sphere.
Temperature- and magnetic-field dependent measurements of the resistance of ultrathin superconducting TiN films are presented. The analysis of the temperature dependence of the zero field resistance indicates an underlying insulating behavior, when the contribution of Aslamasov-Larkin fluctuations is taken into account. This demonstrates the possibility of coexistence of the superconducting and insulating phases and of a direct transition from the one to the other. The scaling behavior of magnetic field data is in accordance with a superconductor-insulator transition (SIT) driven by quantum ph…
A study of magnetic-field tuned superconductor-insulator transitions in amorphous $Nb_{0.15}Si_{0.85}$ thin films shows that quantum superconductor-insulator transitions are characterized by an unambiguous signature -- a kink in the temperature profile of the critical magnetic field. Using this criterion, we show that the nature of the magnetic-field tuned superconductor-insulator transition depends on the orientation of the field with respect to the film. For perpendicular magnetic field, the transition is controlled by quantum fluctuations with indications for the existence of a Bose insulat…
Measurements of transport properties of amorphous insulating indium oxide thin films have been interpreted as evidence of the presence of superconducting islands on the insulating side of a disorder-tuned superconductor-insulator transition. Although the films are not granular, the behavior is similar to that observed in granular films. The results support theoretical models in which the destruction of superconductivity by disorder produces spatially inhomogenous pairing with a spectral gap.
The magnetic-field-tuned superconductor-insulator transition has been studied in ultrathin Beryllium films quench-condensed near 20 K. In the zero-current limit, a finite-size scaling analysis yields the scaling exponent product vz = 1.35 +/- 0.10 and a critical sheet resistance R_{c} of about 1.2R_{Q}, with R_{Q} = h/4e^{2}. However, in the presence of dc bias currents that are smaller than the zero-field critical currents, vz becomes 0.75 +/- 0.10. This new set of exponents suggests that the field-tuned transitions with and without dc bias currents belong to different universality classes.
The superconductor-insulator transition in ultrathin films of amorphous Bi was tuned by an applied magnetic field. A finite size scaling analysis has been carried out to determine the critical exponent product vz=0.7 for five films of different thicknesses and normal state resistances. This result differs from the exponents found in previous experiments on InOx and MoGe films. We discuss several possible reasons for this disagreement.
BaPb$_{1-x}$Bi$_x$O$_3$ is found to exhibit a field-tuned superconductor to insulator transition for Bi compositions 0.24 $\leq x \leq$ 0.29. The magnetoresistance of optimally doped samples manifests a temperature-independent crossing point and scaling of the form $ρ(T,H)=ρ_c F(|H-H_{c}|T^{-1/zν})$, where $H_c$ is the field determined by the temperature-independent crossing point, and $zν$ = 0.69 $\pm$ 0.03. High resolution transmission electron microscopy measurements reveal a complex intergrown nanostructure comprising tetragonal and orthorhombic polymorphs. Data are analyzed in terms of bo…
Magnetic field and electrostatically tuned superconductor-insulator (SI) transitions of ultrathin metal films with levels of disorder that place them near the disorder-tuned SI transition appear to be direct, continuous quantum phase transitions. When films with lower levels of disorder are subjected to a perpendicular magnetic field, instead of a direct transition, a mixed superconductor-nonsuperconductor regime emerges at the lowest temperatures. The zero temperature limit of the resistance is either insulating or superconducting, depending upon the value of the field, suggesting that the be…
We present a study of the magnetic field tuned superconductor-to-insulator transition (SIT) in the electron gas that forms at the LaAlO$_3$/SrTiO$_3$ interface. We find that the magnetic field induces a transition into a weakly insulating state, as is observed for the electrostatically tuned SIT at this interface. Finite size scaling of the magnetoresistance yields the critical exponent product $zν\simeq$ 7/3, indicating that the transition is governed by quantum percolation effects. While such critical exponents have been reported previously for high resistance films, they have not been repor…
A quantum phase transition is a dramatic event marked by large spatial and temporal fluctuations, where one phase of matter with its ground state and tower of excitations reorganizes into a completely different phase. We provide new insight into the disorder-driven superconductor-insulator transition (SIT) in two dimensions, a problem of great theoretical and experimental interest, with the dynamical conductivity σ(ω) and the bosonic (pair) spectral function P(ω) calculated from quantum Monte Carlo simulations. We identify characteristic energy scales in the superconducting and insulating phas…
The 2D superconductor-insulator transition in disordered ultrathin amorphous bismuth films has been tuned both by electrostatic electron doping using the electric field effect and by the application of parallel magnetic fields. Electrostatic doping was carried out in both zero and nonzero magnetic fields, and magnetic tuning was conducted at multiple strengths of electrostatically induced superconductivity. The transitions were analyzed using finite size scaling with critical exponent products nu*z = 0.65-0.7. The parallel critical magnetic field increased with electron transfer as (dn_c-dn)^0…
A parallel field negative magnetoresistance has been found in quench-condensed ultrathin films of amorphous bismuth in the immediate vicinity of the thickness-tuned superconductor-insulator transition. The effect appears to be a signature of quantum fluctuations of the order parameter associated with the quantum critical point.
Recently superconductivity at the interface between the insulators LaAlO3 and SrTiO3 has been tuned with the electric field effect to an unprecedented range of transition temperatures. Here we perform a detailed finite size scaling analysis to explore the compatibility of the phase transition line with Berezinskii-Kosterlitz-Thouless (BKT) behavior and a 2D-quantum phase(QP)-transition. In an intermediate regime, limited by a gate voltage dependent limiting length, we uncover remarkable consistency with a BKT-critical line ending at a metallic quantum critical point, separating a weakly locali…
We present the results of a systematic study of thin-films of amorphous indium-oxide near the superconductor-insulator transition. We show that the film's resistivity follows a simple, well-defined, power-law dependence on the perpendicular magnetic field. This dependence holds well into the insulating state. Our results indicate that vortices play a central role in the transport of our films in the superconducting as well as insulating phases.
Field-tuned superconductor-insulator transition (FSIT) behavior in 2D isotropic and homogeneous thin films is usually accompanied by a nonvanishing critical resistance at low $T$. It is shown that, in a 2D film including line defects paralle to each other but with random positions perpendicular to them, the (apparent) critical resistance in low $T$ limit vanishes, as in the 1D quantum superconducting (SC) transition, under a current parallel to the line defects. This 1D-like critical resistive behavior is more clearly seen in systems with weaker point disorder and may be useful in clarifying w…
In the underdoped pseudogap regime of cuprate superconductors, the normal state is commonly probed by applying a magnetic field ($H$). However, the nature of the $H$-induced resistive state has been the subject of a long-term debate, and clear evidence for a zero-temperature ($T=0$) $H$-tuned superconductor-insulator transition (SIT) has proved elusive. Here we report magnetoresistance measurements in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$, providing striking evidence for quantum critical behavior of the resistivity -- the signature of a $H$-driven SIT. The transition is not direct: it is acco…
We have studied the thickness-induced superconductor-to-insulator transition in the presence of a magnetic field for a-NbSi thin films. Analyzing the critical behavior of this system within the "dirty boson model", we have found a critical exponents product of $ν_d z$ > 0.4. The corresponding phase diagram in the (H,d) plane is inferred. This small exponent product as well as the non-universal value of the critical resistance found at the transition call for further investigations in order to thoroughly understand these transitions.
We explore the implications of Berezinskii-Kosterlitz-Thouless (BKT) critical behavior and variable-range hopping on the two dimensional (2D) quantum superconductor-insulator (QSI) transition driven by tuning the gate voltage. To illustrate the potential and the implications of this scenario we analyze sheet resistance data of Parendo et al. taken on a gate voltage tuned ultrathin amorphous bismuth film. The finite size scaling analysis of the BKT-transition uncovers a limiting length preventing the correlation length to diverge and to enter the critical regime deeply. Nevertheless the attaine…
We have observed multiple magnetic field driven superconductor to insulator transitions (SIT) in amorphous Bi films perforated with a nano-honeycomb (NHC) array of holes. The period of the magneto-resistance, H=H_M=h/2eS where S is the area of a unit cell of holes, indicates the field driven transitions are boson dominated. The field-dependent resistance follows R(T)=R_0(H)exp(T_0(H)/T) on both sides of the transition so that the evolution between these states is controlled by the vanishing of T_0 to0. We compare our results to the thickness driven transition in NHC films and the field driven …
Kagome metals AV3Sb5 (A = K, Rb, and Cs) with a V-Kagome lattice acting as a fertile platform to investigate geometric frustration, electron correlation, superconductivity, and nontrivial band topology, have attracted tremendous attention. Here we reported the structure and properties of ATi3Bi5 (A = Rb, Cs) family with a Ti-Kagome lattice, specifically focusing on the electronic structure and nontrivial band topology of RbTi3Bi5. ATi3Bi5 (A = Rb, Cs) is found to be non-superconducting metal with strong quasi-two-dimensional feature, moderate electron correlation, and small Pauli paramagnetism…
Three-dimensional topological insulators are characterized by the presence of a bandgap in their bulk and gapless Dirac fermions at their surfaces. New physical phenomena originating from the presence of the Dirac fermions are predicted to occur, and to be experimentally accessible via transport measurements in suitably designed electronic devices. Here we study transport through superconducting junctions fabricated on thin Bi2Se3 single crystals, equipped with a gate electrode. In the presence of perpendicular magnetic field B, sweeping the gate voltage enables us to observe the filling of th…
Typically the disorder that alters the interference of particle waves to produce Anderson localization is potential scattering from randomly placed impurities. Here we show that disorder in the form of random gauge fields that act directly on particle phases can also drive localization. We present evidence of a superfluid bose glass to insulator transition at a critical level of this gauge field disorder in a nano-patterned array of amorphous Bi islands. This transition shows signs of metallic transport near the critical point characterized by a resistance of order 0.5 h/4e^2 , indicative of a…
Motivated by the newly-discovered intercalated iron chalcogenide superconductors, we construct a single orbital tight-binding model for topological insulators on the square lattice with a perfect vacancy superstructure. We find that such lattice structure naturally accommodates a non-vanishing geometry phase associated with the next-nearest-neighbor spin-orbit interaction. By calculating the bulk band structures and the finite stripe edge states, we show that the topological insulator phases can be tuned at certain electron fillings in a wide range of the model parameters. The possible implica…
We present a novel route for attaining unconventional superconductivity (SC) in a strongly correlated system without doping. In a simple model of a correlated band insulator (BI) at half-filling we demonstrate, based on a generalization of the projected wavefunctions method, that SC emerges when e-e interactions and the bare band-gap are both much larger than the kinetic energy, provided the system has sufficient frustration against the magnetic order. As the interactions are tuned, SC appears sandwiched between the correlated BI followed by a paramagnetic metal on one side, and a ferrimagneti…
Through a detailed study of scaling near the magnetic field-tuned superconductor-to-insulator transition in strongly disordered films, we find that results for a variety of materials can be collapsed onto a single phase diagram. The data display two clear branches, one with weak disorder and an intervening metallic phase, the other with strong disorder. Along the strongly disordered branch, the resistance at the critical point approaches $R_Q = h/4e^2$ and the scaling of the resistance is consistent with quantum percolation, and therefore with the predictions of the dirty boson model.
We study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films exhibit classical hopping transport. Superconducting films exhibit a magnetic field-tuned SIT, whose insulating ground state at high field appears to be a quantum-corrected metal. Scaling behavior at the field-tuned SIT shows classical percolation critical exponents $z ν\approx$ 1.3, with a corresponding critical field $H_c \ll H_{c2}$. The Hall effect shows a …
Topological insulator (TI) nanowires in proximity with conventional superconductors have been proposed as a tunable platform to realize topological superconductivity and Majorana zero modes (MZM). The tuning is done using an axial magnetic flux $Φ$ which allows transforming the system from trivial at $Φ=0$ to topologically nontrivial when half a magnetic flux quantum $Φ_0/2$ threads the wire's cross-section. Here we explore the expected topological transition in TI-wire-based Josephson junctions as a function of magnetic flux by probing the $4π$-periodic fraction of the supercurrent, which is …
We report the experimental observation of a magnetic-field-tuned superconductor-insulator transition (SIT) in ultrathin TiN films. The low temperature transport properties of these films show scaling behavior consistent with a transition driven by quantum phase fluctuations in two-dimensional superconductor. The magnetoresistance reveals peak and a subsequent decrease in fields higher than the critical field. The temperature dependences of the isomagnetic resistance data on the high-field side of the SIT have been analyzed and the transition from insulating to metallic phase is found, with at …
The behavior of some high temperature superconductors (HTSC) such as $\rm La_{2-x}Sr_{x}CuO_{4}$ and $\rm Bi_{2}Sr_{2-x}La_xCuO_{6+δ}$, at very high magnetic field, is similar to that of thin films of amorphous InOx near the magnetic field-tuned superconductor-insulator transition. Analyzing the InOx data at high fields in terms of persisting local pairing amplitude, we argue by analogy that local pairing amplitude also persists well into the dissipative state of the HTSCs, the regime commonly denoted as the "normal state" in very high magnetic field experiments.
We have studied the magnetic-field-tuned superconductor-insulator quantum transition (SIT) in amorphous In-O films with different oxygen content and, hence, different electron density. While for states of the film near the zero-field SIT the two-dimensional scaling behaviour is confirmed, for deeper states in the superconducting phase the SIT scenario changes: in addition to the scaling function that describes the conductivity of fluctuation-induced Cooper pairs, there emerges a temperature-dependent contribution to the film resistance. This contribution can originate from the conductivity of …
Occurrence of the Berezinskii-Kosterlitz-Thouless (BKT) transition is investigated by superfluid density measurements for two-dimensional (2D) disordered NbN films with disorder level very close to a superconductor-insulator transition (SIT). Our data show a robust BKT transition even near this 2D disorder-tuned quantum critical point (QCP). This observation is in direct contrast with previous data on deeply underdoped quasi-2D cuprates near the SIT. As our NbN films approach the QCP, the vortex-core energy, an important energy scale in the BKT transition, scales with the superconducting gap, …
We have studied experimentally the magnetic field-induced superconductor-insulator quantum phase transition in one-dimensional arrays of small Josephson junctions. The zero bias resistance was found to display a drastic change upon application of a small magnetic field; this result was analyzed in context of the superfluid-insulator transition in one dimension. A scaling analysis suggests a power law dependence of the correlation length instead of an exponential one. The dynamical exponents $z$ were determined to be close to 1, and the correlation length critical exponents were also found to b…
Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron doping or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such a…
The superconductor-insulator transition in ultrathin films of amorphous Bi was tuned by changing the film thickness, with and without an applied magnetic field. The first experimentally obtained phase diagram is mapped as a function of thickness and magnetic field in the T=0 limit. A finite size scaling analysis has been carried out to determine the critical exponent product vz, which was found to be 1.2 for the zero field transition, and 1.4 for the finite field transition. Both results are different from the exponents found for the magnetic field tuned transition in the same system, 0.7.
Layered magnetic transition-metal thiophosphate NiPS3 has unique two-dimensional (2D) magnetic properties and electronic behavior. The electronic band structure and corresponding magnetic state are expected to sensitive to the interlayer interaction, which can be tuned by external pressure. Here, we report an insulator-metal transition accompanied with magnetism collapse during the 2D-3D crossover in structure induced by hydrostatic pressure. A two-stage phase transition from monoclinic (C2=m) to trigonal (P-31m) lattice is identified by ab initio simulation and confirmed by high-pressure XRD …
We study theoretically charge transport properties of normal metal (N) / ferromagnet insulator (FI) / superconductor (S) junction and S/FI/S junction formed on the surface of three-dimensional topological insulator (TI), where chiral Majorana mode (CMM) exists at FI/S interface. We find that CMM generated in N/FI/S and S/FI/S junctions are very sensitively controlled by the direction of the magnetization ${\bm m}$ in FI region. Especially, the current-phase relation of Josephson current in S/FI/S junctions has a phase shift neither 0 nor $π$, which can be tuned continuously by the component of…
We present results on disordered amorphous films which are expected to undergo a field-tuned Superconductor-Insulator Transition.The addition of a parallel ground plane in proximity to the film changes the character of the transition.Although the screening effects expected from "dirty-boson" theories are not evident,there is evidence that the ground plane couples a certain type of dissipation into the system,causing a dissipation-induced phase transition.The dissipation due to the phase transition couples similarly into quantum phase transition systems such as superconductor-insulator transiti…
Magnetic-field tuned superconductor to insulator transition was observed in a novel hybrid system of granular superconducting indium, deposited on indium oxide thin film, which exhibits global superconductivity at low magnetic fields. We have used annealing to tune the coupling to lie just at the borderline where superconductivity in the underlying InOx is suppressed, which is also close to the metal-insulator transition of the InOx. The hybrid system exhibits a "giant" magnetoresistance above the H-SIT, with critical behavior that manifests the duality between Cooper pairs and vortices.
Two experiments are described which are related to the problem of localized Cooper pairs. Magnetic-field-tuned superconductor-insulator transition was studied in amorphous In--O films with onset of the superconducting transition in zero field near 2 K. Experiments performed in the temperature range T>0.3 K indicate that at the critical field, B=B_c, the first derivative of the resistance dR/dT is non-zero at T=0 and hence the scaling relations should be written in more general form. Study of the magnetotransport of high-resistance metastable alloy Cd-Sb on the insulating side of the supercondu…
We report results of transport measurements in the quantum critical regime of the disorder tuned, 2D superconductor-insulator transition (SIT) in homogeneously disordered films. We show that, as the superconducting transition temperature decreases, the transition width grows, appearing to diverge at the SIT. In addition, structure develops in the DC current-voltage characteristics of films closest to the SIT indicating that the 2D superconductivity is driven into a regime of extreme inhomogeneity. The data suggest a picture of the phase transition in which large amplitude fluctuations occur as…
In this work we report a systematic study of electrical current effects on superconducting properties of granular Y$_{1-x}$Pr$_{x}$Ba$_{2}$Cu$_{3}$O$_{7-δ}$ samples with x close to the critical Pr concentration above which the superconductivity vanishes. The results indicate the occurrence of superconductor-insulator quantum phase transition (SIT) driven by the applied electrical current, and suggest that the current-induced SIT can be considered as the dynamical counterpart of the magnetic-field- tuned SIT.
In this article we study superconductor-insulator transitions within the general framework of an attractive Hubbard model. This is a well-defined model of s-wave superconductivity which permits different tuning parameters (disorder and field). Furthermore, it allows a comparison of various analytical and computational approaches in order to gain a complete understanding of the various effects of amplitude and phase fluctuations. We present a systematic pedagogical approach, aiming to equip the lay reader with enough apparatus to be able to understand the numerical calculations, reproduce some …
Recent experiments on short MoGe nanowires show a sharp superconductor-insulator transition tuned by the normal state resistance of the wire, with a critical resistance of $R_c\approx R_Q= h/(4e^2)$. These results are at odds with a broad range of theoretical work on Josephson-like systems that predicts a smooth transition, tuned by the value of the resistance that shunts the junction. We develop a self-consistent renormalization group treatment of interacting phase-slips and their dual counterparts, correlated cooper pair tunneling, beyond the dilute approximation. This analysis leads to a ve…
The influence of static disorder on a quantum phase transition (QPT) is a fundamental issue in condensed matter physics. As a prototypical example of a disorder-tuned QPT, the superconductor-insulator transition (SIT) has been investigated intensively over the past three decades, but as yet without a general consensus on its nature. A key element is good control of disorder. Here, we present an experimental study of the SIT based on precise in-situ tuning of disorder in dual-gated bilayer graphene proximity-coupled to two superconducting electrodes through electrical and reversible control of …
Experimental results of I-V characteristics near the superconductor-insulator transition observed for disorder-tuned YBaCuO thinfilms are presented. The I-V characteristics exibit new quasiperiodic structures as a function of the current. The current interval, the number of the dI/dV peaks, and the magnetic field dependence of the peaks are consistent with the theoretical predictions of the resonant tunneling of a phase particle ina tilted-cosine potential for asingle Josephson junction with small capacitance.
We isolated flux disorder effects on the transport at the critical point of the quantum magnetic field tuned Superconductor to Insulator transition (BSIT). The experiments employed films patterned into geometrically disordered hexagonal arrays. Spatial variations in the flux per unit cell, which grow in a perpendicular magnetic field, constitute flux disorder. The growth of flux disorder with magnetic field limited the number of BSITs exhibited by a single film due to flux matching effects. The critical metallic resistance at successive BSITs grew with flux disorder contrary to predictions of …
Our measurements of the low frequency ac conductivity in strongly disordered two-dimensional films near the magnetic field-tuned superconductor-to-insulator transition show a sudden drop in the phase stiffness of superconducting order with either increased temperature or magnetic field. Surprisingly, for two different material systems, the abrupt drop in the superfluid density in a magnetic field has the same universal value as that expected for a Berezinskii-Kosterlitz-Thouless transition in zero magnetic field. The characteristic temperature at which phase stiffness is suddenly lost can be t…
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and Cu-TaO$_{x}$-TaN$_{x} $), with both devices exhibiting temperature dependent current-voltage characteristics which follow the simple one-particle tunneling model. The superconducting gap follows a BCS type temperature dependence, rendering these devices suitable for sensitive thermometry and bolometry from the superconducting transition temperature $T_{\text{C}}$ …
The superconductor-insulator (SI) transition in two-dimensional Ta thin films is investigated by controlling both film thickness and magnetic field. An intriguing metallic phase intervening superconductor and an insulator phase is observed within a narrow range of film thickness and magnetic field. Finite scaling analysis has been performed to investigate the nature of the SI transition in the thickness-tuned metallic and superconducting samples. The critical exponents in the disorder-induced metallic samples are clearly different from the exponents obtained in the superconducting samples. Dyn…
We propose a novel platform for the creation and manipulation of Majorana zero modes consisting of a ferromagnetic metallic wire placed between conventional superconductors which are in proximity to ferromagnetic insulators. Our device relies on the interplay of applied supercurrents and exchange fields emerging from the ferromagnetic insulators. We assert that the proposed superconductor/ferromagnet heterostructures exhibit enhanced controllability, since topological superconductivity can be tuned apart from gate voltages applied on the ferromagnetic wire, also by manipulating the applied sup…
The superconductor-insulator transition of ultrathin films of bismuth, grown on liquid helium cooled substrates, has been studied. The transition was tuned by changing both film thickness and perpendicular magnetic field. Assuming that the transition is controlled by a T=0 critical point, a finite size scaling analysis was carried out to determine the correlation length exponent v and the dynamical critical exponent z. The phase diagram and the critical resistance have been studied as a function of film thickness and magnetic field. The results are discussed in terms of bosonic models of the s…
A surprisingly strong variation of resistance with perpendicular magnetic field, and a peak in the resistance vs. field, R(B) has been found in insulating films of a sequence of homogeneous, quench-condensed films of amorphous Bi undergoing a thickness-tuned superconductor-insulator transition. Isotherms of magnetoresistance, rather than resistance, vs. field were found to cross at a well-defined magnetic field higher than the field corresponding to the peak in R(B). For all values of B, R(T) was found to obey an Arrhenius form. At the crossover magnetic field the prefactor became equal to the…
