Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi$_2$Te$_3$ nanoribbons
Daniel Rosenbach, Kristof Moors, Abdur R. Jalil, Jonas Kölzer, Erik Zimmermann, Jürgen Schubert, Soraya Karimzadah, Gregor Mussler, Peter Schüffelgen, Detlev Gr… 展开作者
Daniel Rosenbach, Kristof Moors, Abdur R. Jalil, Jonas Kölzer, Erik Zimmermann, Jürgen Schubert, Soraya Karimzadah, Gregor Mussler, Peter Schüffelgen, Detlev Grützmacher, Hans Lüth, Thomas Schäpers
Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berry phase offset of $π$ of self-interfering charge carriers an energy gap within the surface state dispersion appears and all states become spin-degenerate. We investigate and compare the magnetic field dependent surface state dispersion in selectively deposited Bi$_2$Te$_3$ TI micro- and nanoribbon structures by analysing the gate voltage dependent magnetoconductance at cryogenic temperatures. While in wide microribbon devices the field effect mainly changes the amount of bulk charges close to the top surface we identify coherent transverse surface states along the perimeter of the nanoribbon devices responding to a change in top gate potential. We quantify the energetic spacing in between these quantized transverse subbands by using an electrostatic model that treats an initial difference in charge carrier densities on the top and bottom surface as well as remaining bulk charges. In the gate voltage dependent transconductance we find oscillations that change their relative phase by $π$ at half-integer values of the magnetic flux quantum applied coaxial to the nanoribbon, which is a signature for a magnetic flux dependent topological phase transition in narrow, selectively deposited TI nanoribbon devices.
Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused by electron interference. Experimental evidence is presented that the conductance fluctuations in the present topological insulator (Bi$_{0.57}$Sb$_{0.43}$)$_2$Te$_3$ nanoribbons which are selectively grown by molecular beam epitaxy are caused by well-defined and sharply resolved phase-coherent loops. From measurements at different magnetic field tilt angles we deduced that these loops are preferentially oriented parallel to the quintuple …
Electronic transport with a line (or a few lines) of Anderson type disorder in a zigzag graphene nanoribbon is investigated in presence of Rashba spin-orbit interaction. Such line disorders give rise to peculiar behavior in both charge as well as spin-polarized transmission in the following sense. In the weak disorder regime, the charge transport data show Anderson localization up to a certain disorder strength, beyond which the extended states emerge and start dominating over the localized states. These results are the hallmark signature of a selectively disordered (as opposed to bulk disorde…
We study the interaction energy between two graphene nanoribbons by first principles calculations, including van der Waals interactions and spin polarization. For ultranarrow zigzag nanoribbons, the direct stacking is even more stable than Bernal, competing in energy for wider ribbons. This behavior is due to the magnetic interaction between edge states. We relate the reduction of the magnetization in zigzag nanoribbons with increasing ribbon width to the structural changes produced by the magnetic interaction, and show that when deposited on a substrate, zigzag bilayer ribbons remain magnetic…
We report on nano-infrared (IR) imaging studies of confined plasmon modes inside patterned graphene nanoribbons (GNRs) fabricated with high-quality chemical-vapor-deposited (CVD) graphene on Al2O3 substrates. The confined geometry of these ribbons leads to distinct mode patterns and strong field enhancement, both of which evolve systematically with the ribbon width. In addition, spectroscopic nano-imaging in mid-infrared 850-1450 cm-1 allowed us to evaluate the effect of the substrate phonons on the plasmon damping. Furthermore, we observed edge plasmons: peculiar one-dimensional modes propaga…
We have carried out an ab initio study of the structural, electronic and magnetic properties of zigzag graphene nanoribbons on Cu(111), Ag(111) and Au(111). Both, H-free and H-terminated nanoribbons are considered revealing that the nanoribbons invariably possess edge states when deposited on these surfaces. In spite of this, they do not exhibit a significant magnetization at the edge, with the exception of H-terminated nanoribbons on Au(111), whose zero-temperature magnetic properties are comparable to those of free-standing nanoribbons. These results are explained by the different hybridizat…
Graphene has been identified as a promising material with numerous applications, particularly in spintronics. In this paper we investigate the peculiar features of spin excitations of magnetic units deposited on graphene nanoribbons and how they can couple through a dynamical interaction mediated by spin currents. We examine in detail the spin lifetimes and identify a pattern caused by vanishing density of states sites in pristine ribbons with armchair borders. Impurities located on these sites become practically invisible to the interaction, but can be made accessible by a gate voltage or dop…
The formation of a superlattice in graphene can serve as a way to modify its electronic bandstructure and thus to engineer its electronic transport properties. Recent experiments have discovered a Kekulé bond ordering in graphene deposited on top of a Copper substrate, leading to the breaking of the valley degeneracy while preserving the highly desirable feature of linearity and gapless character of its band dispersion. In this paper we study the effects of a Kekulé distortion in zigzag graphene nanoribbons in both, the subband spectrum and on its electronic transport properties. We extend our…
A simple one-stage solution-based method was developed to produce graphene nanoribbons by sonicating graphite powder in organic solutions with polymer surfactant. The graphene nanoribbons were deposited on silicon substrate, and characterized by Raman spectroscopy and atomic force microscopy. Single-layer and few-layer graphene nanoribbons with a width ranging from sub-10 nm to tens of nm and length ranging from hundreds of nm to 1 μm were routinely observed. Electrical transport properties of individual graphene nanoribbons were measured in both the back-gate and polymer-electrolyte top-gate …
Coherent spin-dependent transport through a junction containing of Normal/Ferromagnetic/Normal bilayer graphene nanoribbon with zigzag edges is investigated by using Landauer formalism. In a more realistic set-up, the exchange field is induced by two ferromagnetic insulator strips deposited on the ribbon edges while a perpendicular electric field is applied by the top gated electrodes. Our results show that, for antiparallel configuration, a band gap is opened giving rise a semiconducting behavior, while for parallel configuration, the band structure has no band gap. As a result, a giant magne…
We present an ab initio study of the structural, electronic, and quantum transport properties of B-N-complex edge-doped graphene nanoribbons (GNRs). We find that the B-N edge codop-ing is energetically a very favorable process and furthermore can achieve novel doping effects that are absent for the single B or N doping. The compensation effect between B and N is predicted to generally recover the excellent electronic transport properties of pristine GNRs. For the zigzag GNRs, however, the spatially localized B-N defect states selectively destroy the doped-side spin-polarized GNR edge currents …
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/μm (near 20 mA/μm) is achieved in an In2O3 GAA nanoribbon FET with a channel thickness (TIO) of 3.1 nm, channel length (Lch) of 40 nm, channel width (Wch) of 30 nm and dielectric HfO2 of 5 nm. The record high drain current obtained from an In2O3 FET is about one order of magnitude higher than any conventional single-channel semiconductor FETs. This extraordinary drain curr…
It has recently been shown that electronic transport in zigzag graphene nanoribbons becomes spin-polarized upon application of an electric field across the nanoribbon width. However, the electric fields required to experimentally induce this magnetic state are typically large and difficult to apply in practice. Here, using both first-principles density functional theory (DFT) and time-dependent DFT, we show that a new spiropyran-based, mechanochromic polymer noncovalently deposited on a nanoribbon can collectively function as a dual opto-mechanical switch for modulating its own spin-polarizati…
We investigate scattering of the topological surface state of a three-dimensional time-reversal invariant topological insulator when graphene is deposited on the topological-insulator surface. Specifically, we consider the (111) surface of a Bi$_2$Se$_3$-like topological insulator. We present a low-energy model for the bulk graphene-topological insulator heterostructure and we calculate the transmission probability at zigzag and armchair edges of the deposited graphene, and the conductance through graphene nanoribbon barriers and show that its features can be understood from antiresonances in …
We theoretically investigate the spin-dependent transport for the system of an armchair-edge graphene nanoribbon (AGNR) between two ferromagnetic (FM) leads with arbitrary polarization directions at low temperatures, where a magnetic insulator is deposited on the AGNR to induce an exchange splitting between spin-up and -down carriers. By using the standard nonequilibrium Green's function (NGF) technique, it is demonstrated that, the spin-resolved transport property for the system depends sensitively on both the width of AGNR and the polarization strength of FM leads. The tunneling magnetoresis…
Quasi-1D nanowires of topological insulators are emerging candidate structures in superconductor hybrid architectures for the realization of Majorana fermion based quantum computation schemes. It is however technically difficult to both fabricate as well as identify the 1D limit of topological insulator nanowires. Here, we investigated selectively-grown Bi$_2$Te$_3$ topological insulator nanoribbons and nano Hall bars at cryogenic temperatures for their topological properties. The Hall bars are defined in deep-etched Si$_3$N$_4$/SiO$_2$ nano-trenches on a silicon (111) substrate followed by a …
Recently, two-dimensional nanostructures consisting of alternating graphene and boron nitride (BN) domains have been synthesized. These systems possess interesting electronic and mechanical properties, with potential applications in electronics and optical devices. Here, we perform a first-principles investigation of models of BN-C hybrid monolayers and nanoribbons deposited on the Cu(111) surface, a substrate used for their growth in said experiments. For the sake of comparison, we also consider BN and BC2N nanostructures. We show that BN and BC2N monolayers bind weakly to Cu(111), whereas mo…
Monolayer graphene was deposited on a Si wafer substrate decorated with SiO2 nanoparticles (NPs) and then exposed to aryl radicals that were generated in situ from their diazonium precursors. Using micro-Raman mapping, the aryl radicals were found to selectively react with the regions of graphene that covered the NPs. The enhanced chemical reactivity was attributed to the increased strain energy induced by the local mechanical deformation of the graphene.
