利用工程化介电表面几何结构在固态氖上实现确定性单电子俘获
Deterministic single-electron trapping on solid neon using engineered dielectric surface geometry
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中文总结 AI 辅助
研究固态氖表面悬浮电子量子比特面临的问题，提出在其下方沉积介电层并选择性蚀刻以形成确定性势阱俘获电子的方法，通过模拟验证该方法，为量子信息处理提供了更可靠的平台。
中文摘要 AI 辅助
固态氖表面的悬浮电子量子比特最近成为一种有前途且本质上抗噪声的量子信息处理平台。其超清洁、惰性环境抑制了与晶格无序、电荷陷阱和核自旋浴相关的传统退相干途径。然而，诸如凸起、山谷和电极定义的间隙等不受控制的表面特征会意外束缚电子，产生电荷噪声并诱导自旋 - 轨道耦合介导的退相干。为应对这一挑战，我们提出一种工程化界面，在固态氖下方沉积介电层以提供原子级光滑模板，消除表面粗糙度引起的俘获。通过在所需量子比特位置选择性蚀刻该介电层，可设计确定性势阱以可靠俘获电子同时抑制不需要的表面束缚态。我们进行大规模薛定谔和泊松模拟以比较现有的和提出的氖上电子俘获策略，与最近的实验测量结果取得良好一致。
英文摘要
Levitating electron qubit on the surface of solid neon has recently emerged as a promising and intrinsically noise-resilient platform for quantum information processing. Their ultra-clean, inert environment suppresses conventional decoherence pathways associated with lattice disorder, charge traps, and nuclear-spin baths that limit coherence in semiconductor qubits. Yet, uncontrolled surface features such as bumps, valleys, and electrode-defined gaps can bind electrons unintentionally, contributing charge noise and inducing spin-orbit coupling mediated decoherence. To address this challenge, we propose an engineered interface in which a dielectric layer is deposited beneath the solid neon to provide an atomically smooth template, eliminating surface-roughness induced trapping. By selectively etching this dielectric layer at desired qubit locations, deterministic potential minima can be engineered to reliably capture electrons while suppressing unwanted surface bound states. We perform large-scale Schrodinger and Poisson simulation to compare the existing and proposed strategies of electron trapping on neon, obtaining good agreement with recent experimental measurements.
