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arXiv 2104.01629cond-mat.mes-hall
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双Weyl半金属SrSi $_2$的电子结构和非常规非线性响应

Electronic structure and unconventional non-linear response in double Weyl semimetal SrSi$_2$

Banasree Sadhukhan, Tanay Nag

摘要:

考虑到非中心对称,非磁性的双Weyl半金属(WSM)SrSi $_2$,我们调查的电子和空穴口袋体费米表面的行为,使我们能够表征材料作为一个I型WSM。我们研究了材料的结构手性,并将其与能量演化后两个相对表面的不同表面费米面相关联。费米弧单线态随着自旋轨道耦合的开始而变为双线态,这与Weyl节点的拓扑荷相一致。在SrSi $_2$中,相反手性的WN之间的有限能量分离允许我们计算圆形光电流效应(CPGE)。由三带公式可知,CPGE只在费米能级选择在高能WN附近时才量子化。令人惊讶的是,对于另一个WN相反的手征在较低的能量值,CPGE没有被量化。CPGE的这种行为与时间反演破坏WSM完全相反,在WSM中,CPGE根据激活WN的拓扑电荷被量化为两个相反的平台。我们进一步分析我们的发现,通过检查动量解决CPGE。最后,我们证明了CPGE的两带公式不能捕捉到三带公式所理解的量化。

英文摘要:

Considering a non-centrosymmetric, non-magnetic double Weyl semimetal (WSM) SrSi$_2$, we investigate the electron and hole pockets in bulk Fermi surface behavior that enables us to characterize the material as a type-I WSM. We study the structural handedness of the material and correlate it with the distinct surface Fermi surface at two opposite surfaces following an energy evolution. The Fermi arc singlet becomes doublet with the onset of spin orbit coupling that is in accordance with the topological charge of the Weyl Nodes (WNs). A finite energy separation between WNs of opposite chirality in SrSi$_2$ allows us to compute circular photogalvanic effect (CPGE). Followed by the three band formula, we show that CPGE is only quantized for Fermi level chosen in the vicinity of WN residing at higher value of energy. Surprisingly, for the other WN of opposite chirality in the lower value of energy, CPGE is not found to be quantized. Such a behavior of CPGE is in complete contrast to the time reversal breaking WSM where CPGE is quantized to two opposite plateau depending on the topological charge of the activated WN. We further analyze our finding by examining the momentum resolved CPGE. Finally we show that two band formula for CPGE is not able to capture the quantization that is apprehended by the three band formula.

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