THz隧穿电子器件在渡越时间限制之外的广阔空间
There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit
摘要：
传统的传输系数存在于原来的Landauer公式，这是有效的准静态的情况下，工作频率低于电子渡越时间的倒数，是由一个新的时间相关的位移电流系数有效的频率以上的限制。我们的模型捕捉在一个简单的方式的总电流，这在频率大于电子渡越时间的倒数可以比粒子分量的位移电流分量。所提出的模型被应用于计算从10 $\,$ GHz到5 $\,$ THz的共振隧穿二极管的响应。我们表明，隧道电子器件在这样的高频率，即使在小信号条件下，由于记忆效应相关的位移电流的本质上是非线性的。我们表明，这些固有的非线性（非谐性）代表了一个优势，而不是一个缺点，因为它们打开了许多太赫兹应用中的隧道器件的路径，并避免进一步的设备缩小。
英文摘要：
The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel time-dependent displacement current coefficient valid for frequencies above this limit. Our model captures in a simple way the displacement current component of the total current, which at frequencies larger than the inverse of the electron transit time can be more relevant than the particle component. The proposed model is applied to compute the response of a resonant tunneling diode from 10$\,$GHz up to 5$\,$THz. We show that tunneling electron devices are intrinsically nonlinear at such high frequencies, even under small-signal conditions, due to memory effects related to the displacement current. We show that these intrinsic nonlinearities (anharmonicities) represent an advantage, rather than a drawback, as they open the path for tunneling devices in many THz applications, and avoid further device downscaling.
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