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arXiv 2103.10197cond-mat.mes-hall
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非对称约束准一维结构中的工程电子波函数

Engineering electron wavefunctions in asymmetrically confined quasi one-dimensional structures

S. Kumar, M. Pepper, H. Montagu, D. Ritchie, I. Farrer, J. Griffiths, G. Jones

摘要:

本文介绍了利用非对称限制势在GaAs/AlGaAs异质结构准一维量子线中的电子输运。空间量子化态的能级的变化遵循从强约束到弱约束到二维的开始。初始基态和第一激发态的反交叉被发现作为潜在的不对称性的变化引起两个反交叉事件发生在对称限制的两侧。我们目前的结果分析这种行为,并显示它可以如何受到影响的背景电位的不均匀性。使用增强的源极-漏极电压来改变能级被示出为通过示出与反交叉相关的双行电子的形成而对分析的显著验证。

英文摘要:

We present results on electron transport in quasi-one dimensional (1D) quantum wires in GaAs/AlGaAs heterostructures obtained using an asymmetric confinement potential. The variation of the energy levels of the spatially quantized states is followed from strong confinement through weak confinement to the onset of two-dimensionality. An anticrossing of the initial ground and first excited states is found as the asymmetry of the potential is varied giving rise to two anticrossing events which occur on either side of symmetric confinement. We present results analysing this behaviour and showing how it can be affected by the inhomogeneity in background potential. The use of an enhanced source-drain voltage to alter the energy levels is shown to be a significant validation of the analysis by showing the formation of double rows of electrons which correlate with the anticrossing.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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