We describe a method to automatically generate an ion implantation recipe, a set of energies and fluences, to produce a desired defect density profile in a solid using the fewest required energies. We simulate defect density profiles for a range of ion energies, fit them with an appropriate function, and interpolate to yield defect density profiles at arbitrary ion energies. Given $N$ energies, we then optimize a set of $N$ energy-fluence pairs to match a given target defect density profile. Finally, we find the minimum $N$ such that the error between the target defect density profile and the defect density profile generated by the $N$ energy-fluence pairs is less than a given threshold. Inspired by quantum sensing applications with nitrogen-vacancy centers in diamond, we apply our technique to calculate optimal ion implantation recipes to create uniform-density 1 $μ$m surface layers of $^{15}$N or vacancies (using $^4$He).
Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of $^{28}$Si is required to limit the decoherence pathway caused by magnetic perturbations from surrounding $^{29}$Si nuclear spins (I=1/2), present in natural Si (nat Si) at an abundance of 4.67%. We isotopically enrich surface layers of nat Si by sputtering using high fluence $^{28}$Si$^-$ implantation. Phosphorus (P) donors implanted into one such $^{28}$Si layer with ~3000 ppm $^{29}$Si, produced by implanting 30 keV $^{28}$Si$^-$…
Magneto-ionic control of magnetic properties through ionic migration has shown promise in enabling new functionalities in energy-efficient spintronic devices. In this work, we demonstrate the effect of helium ion irradiation and oxygen implantation on magneto-ionically induced exchange bias effect in Gd/Ni$_{0.33}$Co$_{0.67}$O heterostructures. Irradiation using $He^+$ leads to an expansion of the Ni$_{0.33}$Co$_{0.67}$O lattice due to strain relaxation. At low He+ fluence ($\leq$ 2$\times$10$^{14}$ ions cm$^{-2}$), the redox-induced interfacial magnetic moment initially increases, owing to en…
Hybrid Femtosecond Laser and Ion-Implantation Processing for Controlled, Deep, High-Efficiency Ablation in Fused Silica
Instituto de Optica Daza de Valdes (IO), CSIC（西班牙科学研究中心光学研究所）；HiLASE Centre, FZU - Institute of Physics of the Czech Academy of Sciences（捷克科学院物理研究所 HiLASE 中心）；Universidad Autónoma de Madrid（马德里自治大学）；Centro de Microanálisis de Materiales (CMAM), Universidad Autónoma de Madrid（马德里自治大学材料微分析中心）；FZU - Institute of Physics of the Czech Academy of Sciences（捷克科学院物理研究所）
Interactive Analysis of Static, Dynamic, and Crystalline SDTrimSP Simulations: Application to Nitrogen Ion Implantation into Vanadium
Faculty of Mechanical Engineering, Czech Technical University in Prague（布拉格捷克理工大学机械工程学院）；Faculty of Nuclear Sciences and Physical Engineering, Czech Technical University in Prague（布拉格捷克理工大学核科学与物理工程学院）
Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga$_2$O$_3$ thin films
INESC Microsystems and Nanotechnology（微电子与纳米技术研究所）；Institute for Plasmas and Nuclear Fusion, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院等离子体与核聚变研究所）；Université Caen Normandie, CEA, ENSICAEN, CNRS, Normandie Univ, CIMAP UMR6252（卡昂诺曼底大学）；Centre for Nuclear Sciences and Technologies, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院核科学与技术中心）；Department of Nuclear Science and Engineering, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院核科学与工程系）
The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable doping. In this work, we demonstrate n-type doping in MoSe2 flakes realized by low-energy ion implantation of Cl+ ions followed by millisecond-range flash lamp annealing (FLA). We further show that FLA for 3 ms with a peak temperature …
Influence of oxygen ion implantation on magnetic microstructure in Pt/Co/Pt multilayers with perpendicular magnetic anisotropy
UPES Dehradun（印度能源与环境大学）；UGC-DAE Consortium for Scientific Research（UGC-DAE 科学研究联盟）；Variable Energy Cyclotron Centre, HBNI（可变能量回旋加速器中心，HBNI）；Indian Institute of Technology Roorkee（印度理工学院罗尔基）；Deutsches Elektronen-Synchrotron DESY（德国电子同步加速器）；DIT University（迪特大学）
The influence of nitrogen ion implantation on the microstructure and chemical composition of a thin layer on the biodegradable Zn-0.8Mg-0.2Sr substrate
Abstract Applications of nitrogen-vacancy (NV) centers in diamond in quantum technology have attracted considerable attention in recent years. Deterministic generation of ensembles of NV centers can advance the research on quantum sensing, many-body quantum systems, multipartite entanglement and so on. Here we report the complete process of controlled generation of NV centers in diamond as well as their characterisation: growing diamond films through chemical vapor deposition (CVD), ion implantation and spectroscopic characterization of the defect centers using a confocal microscope. A microwa…
W-O deposits with complex morphologies and significant He contents will growth on the surface of plasma facing components exposed to He discharges. To mimic the re/co-deposition process, W-O-He coatings were produced by implanting He+ ions on W films grown by pulsed laser deposition (PLD). The use of appropriate PLD experimental parameters such as Ar or He background atmospheres induces the deposition of porous or amorphous-like W-O structures, respectively. After multiple ion implantation stages using 150 keV, 100 keV and 50 keV incident He+ ion beams with a total fluence of 5 x 1017 ion/cm^2…
Layered transition metal dichalcogenides (TMDs) are attracting increasing attention because they exhibit unconventional magnetic properties due to crystal imperfections in their usually non-magnetic 2D structure. This work aims to investigate the magnetic response of self-engineered Se deficient TiSe$_2$ thin films, synthesized using chemical vapour deposition. We demonstrate tunability of the ferromagnetic order with the introduction of Au atoms using low energy Au ion implantation, which works as a controlling knob to vary the stoichiometry of Se in TiSe$_{2-x}$. The corresponding isothermal…
Defects creation and annihilation is a fundamental concept in device fabrication. This report studies the optical bandgap modification in MgO by MeV Ni ion irradiation-induced defect states between valance and conduction band. Ion implantation on MgO single crystal produces substitutional defect states along with F (anionic vacancy center), $F_2$, other oxygen vacancy center and V (cationic vacancy center) centers confirmed from absorption and photoluminescence spectra that can be applied as filament in valance charge memory based resistive random access memories. The variation of optical band…
Microtubes and nanomembranes by ion-beam-induced exfoliation of $β$-Ga$_{2}$O$_{3}$
INESC Microsystems and Nanotechnology（微电子学和纳米技术研究所）；Institute for Plasmas and Nuclear Fusion, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院等离子体与核聚变研究所）；Department of Physics, University of Helsinki（赫尔辛基大学物理系）；Department of Physics and Centre for Materials Science and Nanotechnology, University of Oslo（奥斯陆大学物理系及材料与纳米科技中心）；Department of Nuclear Science and Engineering, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院核科学与工程系）；Helmholtz-Zentrum Dresden-Rossendorf（德累斯顿-罗斯多夫亥姆霍兹中心）；Centre for Structural Chemistry, Institute of Molecular Sciences and Department of Chemical Engineering, Instituto Superior Técnico, University of Lisbon（里斯本大学高等理工学院分子科学研究所结构化学中心及化学工程系）
From phase transformation to amorphization: damage accumulation in Yb-implanted $β-Ga_2O_3$
National Centre for Nuclear Research（国家核研究中心）；Institute of High Pressure Physics UNIPRESS, Polish Academy of Sciences（波兰科学院高压物理研究所）；Helmholtz-Zentrum Dresden-Rossendorf（德累斯顿-罗斯多尔夫亥姆霍兹中心）
