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arXiv 2103.01949cond-mat.mes-hallquant-ph
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观测石墨烯纵向电导率中光致Floquet能隙

Observing light-induced Floquet band gaps in the longitudinal conductivity of graphene

Lukas Broers, Ludwig Mathey

AI总结:

本文提出用光学纵向电导率探测石墨烯中光致Floquet能隙,通过耗散主方程方法揭示能带占据与粒子数反转对电导率的抑制,为Floquet工程和光控输运提供新途径。

摘要:

我们提出将光学纵向电导率作为一种现实可行的观测量,用于探测石墨烯中光致Floquet能隙。当以探测频率和驱动场强度为变量进行分辨时,这些能隙会在电导率中表现为共振特征。我们通过耗散主方程方法展示了这些特征,该方法能够获得频率和动量分辨的电子分布。该分布遵循光致Floquet-Bloch能带,因此可以自然地将其解释为这些能带上的占据情况。此外,我们表明,在足够强的驱动场强度下,能隙处的Floquet-Bloch能带存在粒子数反转。这会在相应频率处强烈降低电导率。因此,我们的方案不仅明确展示了光致Floquet-Bloch能带,推动了固体中Floquet工程领域的发展,还指出了通过光调控输运性质的可能性,这种调控源于电子在这些能带上的分布。

英文摘要:

We propose optical longitudinal conductivity as a realistic observable to detect light-induced Floquet band gaps in graphene. These gaps manifest as resonant features in the conductivity, when resolved with respect to the probing frequency and the driving field strength. We demonstrate these features via a dissipative master equation approach which gives access to a frequency- and momentum-resolved electron distribution. This distribution follows the light-induced Floquet-Bloch bands, resulting in a natural interpretation as occupations of these bands. Furthermore, we show that there are population inversions of the Floquet-Bloch bands at the band gaps for sufficiently strong driving field strengths. This strongly reduces the conductivity at the corresponding frequencies. Therefore our proposal puts forth not only an unambiguous demonstration of light-induced Floquet-Bloch bands, which advances the field of Floquet engineering in solids, but also points out the control of transport properties via light, that derives from the electron distribution on these bands.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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