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arXiv 2102.09327physics.opticscond-mat.mtrl-sciphysics.app-phquant-ph
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利用单轴应力调谐半导体微腔的模式分裂

Tuning the mode-splitting of a semiconductor microcavity with uniaxial stress

Natasha Tomm, Alexander R. Korsch, Alisa Javadi, Daniel Najer, Rüdiger Schott, Sascha R. Valentin, Andreas D. Wieck, Arne Ludwig, Richard J. Warburton

摘要:

通常观察到包括半导体异质结构的微/纳米腔中的基本光学模式的分裂。考虑到这种分裂对于光-物质相互作用以及因此量子技术应用起着重要作用,控制模式分裂的方法是重要的。在这项工作中,我们使用了一个开放的微腔组成的“底部”半导体分布式布拉格反射器(DBR)纳入n-i-p异质结,配对的“顶部”弯曲的介质DBR。我们测量了作为阻带内波长的函数的模式分裂。我们展示了一种可逆的原位技术,通过施加单轴应力到半导体DBR来调整模式分裂。该方法利用了半导体材料的光弹性效应。我们实现了$\sim$ 11 GHz的最大调谐。施加到异质结构的应力通过观察嵌入样品中的量子点的光致发光来确定,通过变形势将光谱偏移转换为应力。对模分裂及其在阻带内的调谐进行了深入的研究,从而对结果背后的机制有了定量的了解。

英文摘要:

A splitting of the fundamental optical modes in micro/nano-cavities comprising semiconductor heterostructures is commonly observed. Given that this splitting plays an important role for the light-matter interaction and hence quantum technology applications, a method for controlling the mode-splitting is important. In this work we use an open microcavity composed of a "bottom" semiconductor distributed Bragg reflector (DBR) incorporating an n-i-p heterostructure, paired with a "top" curved dielectric DBR. We measure the mode-splitting as a function of wavelength across the stopband. We demonstrate a reversible in-situ technique to tune the mode-splitting by applying uniaxial stress to the semiconductor DBR. The method exploits the photoelastic effect of the semiconductor materials. We achieve a maximum tuning of $\sim$11 GHz. The stress applied to the heterostructure is determined by observing the photoluminescence of quantum dots embedded in the sample, converting a spectral shift to a stress via deformation potentials. A thorough study of the mode-splitting and its tuning across the stop-band leads to a quantitative understanding of the mechanism behind the results.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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