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arXiv 2102.09135cond-mat.mtrl-sciphysics.comp-ph
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空穴掺杂铁电体α- In2Se3的磁性调谐

Tunable magnetism in ferroelectric α-In2Se3 by hole-doping

Chang Liu, Bing Wang, Guanwei Jia, Pengyu Liu, Huabing Yin, Shan Guan, Zhenxiang Cheng

摘要:

二维(2D)多铁性材料由于其潜在的科学意义和潜在的应用前景吸引了广泛的研究。虽然已经观察到/预测了许多2D系统是铁电或铁磁的,但具有两种铁电性质的2D材料仍然很少。通过第一性原理计算,我们预测空穴掺杂可以在二维铁电体α-In 2 Se 3中诱导出强的铁磁性,这是由于其独特的平坦能带结构,居里温度(TC)可以远高于室温。此外,掺杂浓度、应变和层数可以有效地调制材料的磁矩和TC。有趣的是,在空穴掺杂的多层α-In 2Se 3的表面处发现了强的磁电耦合,这允许非易失性电控制磁化。我们的工作提供了一个可行的方法来设计/搜索二维多铁性材料在未来的设备应用,如存储器设备和传感器的巨大潜力。

英文摘要:

Two-dimensional (2D) multiferroics attract intensive investigations because of underlying science and their potential applications. Although many 2D systems have been observed/predicted to be ferroelectric or ferromagnetic, 2D materials with both ferroic properties are still scarce. By using first-principles calculations, we predict that hole-doping can induce robust ferromagnetism in 2D ferroelectric α-In2Se3 due to its unique flat band structure, and the Curie temperature (TC) can be much higher than room temperature. Moreover, the doping concentration, strain, and number of layers can effectively modulate the magnetic moment and the TC of the material. Interestingly, strong magnetoelectric coupling is found at the surface of hole doped multilayer α-In2Se3, which allows non-volatile electric control of magnetization. Our work provides a feasible approach for designing/searching 2D multiferroics with great potential in future device applications, such as memory devices and sensors.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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