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arXiv 2102.08428cond-mat.mtrl-sciphysics.app-ph
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作为存储元件的柔性反铁磁FeRh带

Flexible antiferromagnetic FeRh tapes as memory elements

Ignasi Fina, Nico Dix, Enric Menéndez, Anna Crespi, Michael Foerster, Lucia Aballe, Florencio Sánchez, Josep Fontcuberta

摘要:

在室温以上的FeRh中发生的反铁磁到铁磁的转变在自旋电子学中的应用引起了人们的兴趣,其前景是稳健的和不可追踪的数据存储。在这里,我们表明,FeRh薄膜可以生长在一个灵活的金属基板(带状),涂有纹理的岩盐MgO层,适合大规模应用。FeRh带在约90 oC时显示出急剧的反铁磁到铁磁转变。其磁性通过弯曲(半径为300 mm)得以保留,其各向异性磁阻(高达0.05%)用于说明数据写入/读取能力。

英文摘要:

The antiferromagnetic to ferromagnetic transition occurring above room temperature in FeRh is attracting interest for applications in spintronics, with perspectives for robust and untraceable data storage. Here, we show that FeRh films can be grown on a flexible metallic substrate (tape shaped), coated with a textured rock-salt MgO layer, suitable for large scale applications. The FeRh tape displays a sharp antiferromagnetic to ferromagnetic transition at about 90 oC. Its magnetic properties are preserved by bending (radii of 300 mm), and their anisotropic magnetoresistance (up to 0.05 %) is used to illustrate data writing/reading capability.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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