反铁磁存储器中的室温读写操作
Room temperature write-read operations in antiferromagnetic memory
摘要：
B2有序的FeRh在室温附近具有反铁磁-铁磁（AF-F）相变。通过AF-F相变对Néel序的控制以及最近对反铁磁FeRh各向异性磁电阻的实验观察，证明了FeRh是一种很有希望的反铁磁存储材料。在这项工作中，我们演示了顺序写入和读取操作的反铁磁存储电阻由B2阶FeRh薄膜由磁场和电流只有。我们的演示在室温下的写入和读取打开了一个现实的路径操作反铁磁存储器设备。
英文摘要：
B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic (AF-F) phase transitions in the vicinity of room temperature. Manipulation of the Néel order via AF-F phase transition and recent experimental observation of the anisotropic magnetoresistance in antiferromagnetic FeRh has proven that FeRh is a promising candidate for antiferromagnetic memory material. In this work, we demonstrate sequential write and read operations in antiferromagnetic memory resistors made of B2-orderd FeRh thin films by a magnetic field and electric current only. Our demonstration of writing and reading at ambient room temperature opens a realistic pathway towards operational antiferromagnetic memory devices.
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