具备高精度读取与高能效写入的模拟相变计算存储器
Analogue Phase Change Computational Memory with High Precision Reads and Energy Efficient Writes
- IBM Research – Europe（IBM欧洲研究所）
- Consiglio Nazionale delle Ricerche（意大利国家研究委员会）
- IBM Research– Yorktown Heights（IBM约克敦高地研究所）
机构由 AI 辅助整理，请以论文原文为准。
AI总结：
针对阻变存储器在内存计算中精度、能效与密度难以兼顾的问题，提出结合超受限有源开关体积与非绝缘薄膜的相变存储器架构，实现近6位精度、低电导及亚100μA编程电流的性能。
AI中文摘要：
阻变存储器技术为内存计算提供了极具吸引力的优势，但由于这些性能指标之间存在固有权衡，要实现同时具备高计算精度、高能效和高密度的器件架构一直难以实现。本文提出一种紧凑的相变存储器器件架构，该架构结合了超受限的有源开关体积以提升电热效率，以及可抑制时域电导波动的非绝缘薄膜。我们对这些器件进行分析建模，并将其后端集成到交叉阵列中。即使使用常规未掺杂的相变材料，该器件架构也能实现接近6位的计算精度、低于50μS的低电导值及足够的电导窗口，且在标称工作电压下具备实现亚100μA编程电流的可行路径。
英文摘要：
Resistive memory technologies offer a compelling advantage for in-memory computing. However, realizing a device architecture that simultaneously achieves high computational precision, efficiency, and density has remained elusive due to inherent trade-offs among these performance metrics. Here, we introduce a com- pact phase-change memory device architecture that combines an ultra-confined active switching volume for enhanced electro-thermal efficiency with a non-insulating thin film that suppresses temporal conductance fluctuations. We analytically model and back-end integrate these devices into crossbar arrays. Even with conventional, undoped phase-change materials, the device architecture enables a computational precision approaching 6 bits, low conductance values below 50 μS with an adequate conductance window, and a viable pathway toward sub-100 μA programming currents under nominal operating voltages.
