基于单层并五苯的一次写入多次读取存储器
Write-once read-many-times memory based on a single layer of Pentacene
摘要：
我们实现了一种结构简单的有机电存储器件，该器件基于单层并五苯薄膜嵌入Al和ITO电极之间。并五苯的厚度和沉积速率的优化导致在一个可靠的设备与ON/OFF电流比高达近1000000，这是两个数量级高于以前的结果，和存储时间超过576小时。在不同的电场作用下，界面偶极子的形成和破坏导致了电流的过渡过程，电流的传导呈现出从欧姆传导电流向Fowler？诺德海姆隧穿电流在从ON状态到OFF状态的转变之后，即使当去除施加的电压时，器件也倾向于保持在OFF状态，这表明该器件非常有希望用于一次写入多次读取（WORM）存储器。
英文摘要：
We realized an organic electrical memory device with a simple structure based on single layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable device with an ON/OFF current ratio as high as nearly 1000000 which was two orders of magnitude higher than previous results, and the storage time was more than 576 hrs. The current transition process is attributed to the formation and damage of the interface dipole at different electric fields, in which the current conduction showed a transition from Ohmic conductive current to Fowler?Nordheim tunnelling current. After the transition from ON state to OFF state, the device tended to remain in OFF state even when the applied voltage was removed, which indicated that the device was very promising for write-once read-many-times (WORM) memory.
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