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arXiv 2102.06123cond-mat.mes-hallcond-mat.mtrl-scicond-mat.otherphysics.app-phquant-ph
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用于连接量子器件的微观金属空气桥阵列

Microscopic metallic air-bridge arrays for connecting quantum devices

Y. Jin, M. Moreno, P. M. T. Vianez, W. K. Tan, J. P. Griffiths, I. Farrer, D. A. Ritchie, C. J. B. Ford

摘要:

我们提出了一个非常大的阵列的微观空气桥使用三层抗蚀剂与电子束光刻工艺的单次曝光制造技术。该技术能够形成具有强金属-金属或金属-衬底连接的空气桥。这一点通过其在电子隧穿器件中的应用得到了证明,该电子隧穿器件由400个相同的表面栅极组成,用于定义量子线,其中空气桥用作表面栅极的悬挂连接。这种技术使我们能够创建一个大阵列的统一的一维通道,是开放的两端。在这篇文章中,我们概述了制造过程的细节,连同研究和解决方案的挑战,在该技术的发展,其中包括使用水-IPA(异丙醇)显影剂,抗蚀剂厚度的校准和数值模拟的发展。

英文摘要:

We present a single-exposure fabrication technique for a very large array of microscopic air-bridges using a tri-layer resist process with electron-beam lithography. The technique is capable of forming air-bridges with strong metal-metal or metal-substrate connections. This was demonstrated by its application in an electron tunnelling device consisting of 400 identical surface gates for defining quantum wires, where the air-bridges are used as suspended connections for the surface gates. This technique enables us to create a large array of uniform one-dimensional channels that are open at both ends. In this article, we outline the details of the fabrication process, together with a study and the solution of the challenges present in the development of the technique, which includes the use of water-IPA (isopropyl alcohol) developer, calibration of resist thickness and numerical simulation of the development.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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