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arXiv 1109.5232cond-mat.str-elcond-mat.mes-hall
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二维空穴系统中重入绝缘相与零场金属-绝缘体相变的联系

Connecting the Reentrant Insulating Phase and the Zero Field Metal-Insulator Transition in a 2D Hole System

Richard L. J. Qiu, Xuan P. A. Gao, L. N. Pfeiffer, K. W. West

摘要:

我们测量了10 nm宽GaAs量子阱的输运和电容,其空穴密度在二维金属-绝缘体转变的临界点附近(临界密度$p_c$下降到0.8 $\times10^{10}$ /cm $^2$,$r_s\sim$ 36)。对于金属空穴密度$p_c < p <p_c +0.15\times10^{10}$ /cm $^2$,在$ν$ =1的量子霍尔态和零场金属态之间观察到一个重入绝缘相(RIP),并归因于钉扎维格纳晶体的形成。通过输运和电容实验研究RIP随2D空穴密度的演化,我们表明RIP是不可压缩的,并且连续地连接到零场绝缘体,这两个阶段的起源相似。

英文摘要:

We present the transport and capacitance measurements of 10nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density $p_c$ down to 0.8$\times10^{10}$/cm$^2$, $r_s\sim$36). For metallic hole density $p_c < p <p_c +0.15\times10^{10}$/cm$^2$, a reentrant insulating phase (RIP) is observed between the $ν$=1 quantum Hall state and the zero field metallic state and is attributed to the formation of pinned Wigner crystal. Through studying the evolution of the RIP versus 2D hole density by transport and capacitance experiments, we show that the RIP is incompressible and continuously connected to the zero field insulator, suggesting a similar origin for these two phases.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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