离子注入IV族纳米结构的光发射
Light-emission from ion-implanted group-IV nanostructures
摘要：
硅光子学注定要彻底改变技术领域，例如短距离数据传输和传感应用，将集成光学的优势与硅基微电子的自信相结合。然而，缺乏实用和低成本的硅基单片光源，如发光二极管，特别是激光器，是硅光子学成为21世纪关键技术的主要瓶颈。在简要回顾了硅基发光体的最新技术水平后，我们讨论了高度灵活的方法的挑战和好处：将IV族纳米结构外延并入晶体硅。我们认为，一个范式的变化，第四族量子点（QD）可以实现通过有意纳入扩展点缺陷内的低能量离子注入的QD。我们将讨论这种缺陷增强型量子点（DEQD）的优异发光性能，以及我们目前对它们的结构形成和发光机制的理解。我们将表明，有用的电驱动器件，如发光二极管（LED）可以制造采用光学活性DEQD材料。这些LED甚至在高达100°C的温度下也表现出优异的光发射性能的温度稳定性，这对于纯IV族光电子器件来说是前所未有的。此后，我们将评估热退火后DEQD结构特性的优异温度稳定性，DEQD密度和钝化方案的光发射的可扩展性，以进一步改善光学特性。本章最后讨论了未来的研究方向，将进一步激发这一令人兴奋的领域的发展。
英文摘要：
Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of silicon-based microelectronics. However, the lack of practical and low-cost silicon-based monolithic light sources such as light-emitting diodes and, in particular, lasers is the main bottleneck for silicon photonics to become the key technology of the 21st century. After briefly reviewing the state of the art regarding silicon-based light-emitters, we discuss the challenges and benefits of a highly flexible approach: The epitaxial incorporation of group-IV nanostructures into crystalline silicon. We argue that a paradigm change for group-IV quantum dots (QDs) can be achieved by the intentional incorporation of extended point defects inside the QDs upon low energy ion implantation. The superior light-emission properties from such defect-enhanced quantum dots (DEQDs), our present understanding of their structural formation and light-emission mechanisms will be discussed. We will show that useful electrically-driven devices, such as light-emitting diodes (LEDs) can be fabricated employing optically active DEQD-material. These LEDs exhibit exceptional temperature-stability of their light emission properties even up to 100°C, unprecedented for purely group-IV-based optoelectronic devices. Thereafter, we will assess the superior temperature stability of the structural properties of DEQDs upon thermal annealing, the scalability of the light-emission with the DEQD density and passivation schemes to further improve the optical properties. The chapter ends with a discussion of future research directions that will spark the development of this exciting field even further.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
