Scalable hyperfine qubit state detection via electron shelving in the ${}^2$D$_{5/2}$ and ${}^2$F$_{7/2}$ manifolds in ${}^{171}$Yb$^{+}$
C. L. Edmunds, T. R. Tan, A. R. Milne, A. Singh, M. J. Biercuk, C. Hempel
备注:
12 pages, 2 tables, 8 figures. Submitted jointly with arXiv:2012.14187, "Precision Characterization of the ${}^2$D$_{5/2}$ State and Quadratic Zeeman Coefficient in ${}^{171}$Yb$^{+}$''
Qubits encoded in hyperfine states of trapped ions are ideal for quantum computation given their long lifetimes and low sensitivity to magnetic fields, yet they suffer from off-resonant scattering during detection often limiting their measurement fidelity. In ${}^{171}$Yb$^{+}$ this is exacerbated by a low fluorescence yield, which leads to a need for complex and expensive hardware - a problematic bottleneck especially when scaling up the number of qubits. We demonstrate a detection routine based on electron shelving to address this issue in ${}^{171}$Yb$^{+}$ and achieve a 5.6$\times$ reduction in single-ion detection error on an avalanche photodiode to $1.8(2)\times10^{-3}$ in a 100 $μ$s detection period, and a 4.3$\times$ error reduction on an electron multiplying CCD camera, with $7.7(2)\times10^{-3}$ error in 400 $μ$s. We further improve the characterization of a repump transition at 760 nm to enable a more rapid reset of the auxiliary $^2$F$_{7/2}$ states populated after shelving. Finally, we examine the detection fidelity limit using the long-lived $^2$F$_{7/2}$ state, achieving a further 300$\times$ and 12$\times$ reduction in error to $6(7)\times10^{-6}$ and $6.3(3)\times10^{-4}$ in 1 ms on the respective detectors. While shelving-rate limited in our setup, we suggest various techniques to realize this detection method at speeds compatible with quantum information processing, providing a pathway to ultra-high fidelity detection in ${}^{171}$Yb$^{+}$.
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Beijing Academy of Quantum Information Sciences(北京量子信息科学研究院);Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences(中国科学院物理研究所凝聚态物理北京国家实验室);University of Chinese Academy of Sciences(中国科学院大学);Department of Physics and Astronomy, University College London(伦敦大学学院物理与天文系);State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductor, Chinese Academy of Sciences(中国科学院半导体研究所半导体物理与芯片技术国家重点实验室);School of Electronics, Peking University(北京大学电子学院)
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