Very recently, a novel two-dimension (2D) MXene, MoSi$_2$N$_4$, was successfully synthesized with excellent ambient stability, high carrier mobility, and moderate band gap (Science 369, 670, 2020). In this work, the intrinsic lattice thermal conductivity of monolayer MoSi$_2$N$_4$ is predicted by solving the phonon Boltzmann transport equation based on the first-principles calculations. Despite the heavy atomic mass of Mo and complex crystal structure, the monolayer MoSi$_2$N$_4$ unexpectedly exhibits a quite high lattice thermal conductivity over a wide temperature range between 300 to 800 K. At 300 K, its in-plane lattice thermal conductivity is 224 Wm$^{-1}$K$^{-1}$. The detailed analysis indicates that the large group velocities and small anharmonicity are the main reasons for its high lattice thermal conductivity. We also calculate the lattice thermal conductivity of monolayer WSi$_2$N$_4$, which is only a little smaller than that of MoSi$_2$N$_4$. Our findings suggest that monolayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ are potential 2D materials for thermal transport in future nano-electronic devices.
Photo-excited electrons and holes in insulators, above a critical density and below a critical temperature, can condense to form an electron-hole liquid (EHL) phase. However, observing the EHL phase at room temperature is extremely challenging. Here, we introduce the monolayer MoSi$_2$Z$_4$ (Z= N, As, P) series of compounds as a promising platform for observing the EHL phase at room temperature. The higher impact of the Coulomb interactions in two dimensions helps these monolayers support the EHL phase with an increased EHL binding energy and transition temperature, along with strongly bound e…
Two-dimensional (2D) MoSi$_2$N$_4$ monolayer is an emerging class of air-stable 2D semiconductor possessing exceptional electrical and mechanical properties. Despite intensive recent research efforts devoted to uncover the material properties of MoSi$_2$N$_4$, the physics of electrical contacts to MoSi$_2$N$_4$ remains largely unexplored thus far. In this work, we study the van der Waals heterostructures composed of MoSi$_2$N$_4$ contacted by graphene and NbS$_2$ monolayers using first-principle density functional theory calculations. We show that the MoSi$_2$N$_4$/NbS$_2$ contact exhibits an …
In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as MoSi$_{2}$As$_{4}$, have been predicted [{\color{blue}Science 369, 670-674 (2020)}]. Here, based on first-principles calculations and theoretical analysis, we investigate the electronic and optical properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$. We show that these materials are semiconductors, with a pair of Dirac-type valleys located …
Reduced dielectric screening in two-dimensional materials enables bound excitons, which modifies their optical absorption and optoelectronic response even at room temperature. Here, we demonstrate the existence of excitons in the bandgap of the monolayer family of the newly discovered synthetic MoSi$_2$Z$_4$ (Z = N, P, and As) series of materials. All three monolayers support several bright and strongly bound excitons with binding energies varying from 1 eV to 1.35 eV for the lowest energy exciton resonances. On increasing the pump fluence, the exciton binding energies get renormalized, leadin…
By a combined study with first-principles calculations and symmetry analysis, we theoretically investigate the electronic properties of monolayer MoSi$_2$N$_4$. While the spin-orbital coupling results in bands splitting, the horizontal mirror symmetry locks the spin polarization along z-direction. In addition, a three-band tight-binding model is constructed to describe the low-energy quasi-particle states of monolayer MoSi$_2$N$_4$, which can be generalized to strained MoSi$_2$N$_4$ and its derivatives. The calculations using the tight-binding model show an undamped $\sqrt{q}$-dependent plasmo…
Experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020)}) is a piezoelectric semiconductor. Here, we systematically study the large biaxial (isotropic) strain effects (0.90 to 1.10) on electronic structures and transport coefficients of monolayer $\mathrm{MoSi_2N_4}$ by density functional theory (DFT). With $a/a_0$ from 0.90 to 1.10, the energy band gap firstly increases, and then decreases, which is due to transformation of conduction band minimum (CBM). Calculated results show that the $\mathrm{MoSi_2N_4}$ monolayer is mechanically stable …
The electronic properties of a field-effect transistor with two different structures of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that these compounds are semiconductors with an indirect bandgap. Their band gaps can be adjusted by applying in-plane biaxial strain. In the following, the variation of the energies of the valleys and corresponding effective masses with respect to the strain are explored. Finally, the strained MoSi$_2$N$_4$ or WSi$_2$N$_4$ are used as the channel of a p-type FET and…
Motived by experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020})), the intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W) are studied by density functional theory (DFT). Among the six monolayers, the $\mathrm{CrSi_2N_4}$ has the best piezoelectric strain coefficient $d_{11}$ of 1.24 pm/V, and the second is 1.15 pm/V for $\mathrm{MoSi_2N_4}$. Taking $\mathrm{MoSi_2N_4}$ as a example, strain engineering is applied to improve $d_{11}$. It is found that tensile biaxial strain can enhance $d_{11}$ of $\mat…
Metal contacts to two-dimensional (2D) semiconductors are ubiquitous in modern electronic and optoelectronic devices. Such contacts are, however, often plagued by strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height (SBH) and degrades the performance of 2D-semiconductor-based devices. In this work, we show that monolayer MoSi$_2$N$_4$ and WSi$_2$N$_4$ - a recently synthesized 2D material class with exceptional mechanical and electronic properties - exhibit strongly suppressed FLP and wide-range tunable SBH when contacted by metals. An exceptionall…
Very recently, the two-dimensional (2D) form of MoSi2N4 has been successfully fabricated [Hong et al., Sci. 369, 670 (2020)]. Motivated by theses recent experimental results, herein we investigate the structural, mechanical, thermal, electronic, optical and photocatalytic properties using hybrid density functional theory (HSE06-DFT). Phonon band dispersion calculations reveal the dynamical stability of MoSi2N4 monolayer structure. Furthermore, the mechanical study confirms the stability of MoSi2N4 monolayer. As compared to the corresponding value of graphene, we find the Youngs modulus decreas…
The electronic structure of two-dimensional (2D) materials are inherently prone to environmental perturbations, which may pose significant challenges to their applications in electronic or optoelectronic devices. A 2D material couples with its environment through two mechanisms: local chemical coupling and nonlocal dielectric screening effects. The local chemical coupling is often difficult to predict or control experimentally. Nonlocal dielectric screening, on the other hand, can be tuned by choosing the substrates or layer thickness in a controllable manner. Therefore, a compelling 2D electr…
Chemical vapor deposition has been most recently employed to fabricate centimeter-scale high-quality single-layer MoSi2N4 (Science; 2020;369; 670). Motivated by this exciting experimental advance, herein we conduct extensive first-principles based simulations to explore the stability, mechanical properties, lattice thermal conductivity, piezoelectric and flexoelectric response, and photocatalytic and electronic features of MA2Z4 (M = Cr, Mo, W; A = Si, Ge; Z = N, P) monolayers. The considered nanosheets are found to exhibit dynamical stability and remarkably high mechanical properties. Moreove…
Manipulation of spin-polarized electronic states of two-dimensional (2D) materials under ambient conditions is necessary for developing new quantum devices with small physical dimensions. Here, we explore spin-dependent electronic structures of ultra-thin films of recently introduced 2D synthetic materials MSi$_2$Z$_4$ (M = Mo or W and Z = N or As) using first-principles modeling. Stacking of MSi$_2$Z$_4$ monolayers is found to generate dynamically stable bilayer and bulk materials with thickness-dependent properties. When spin-orbit coupling (SOC) is included in the computations, MSi$_2$N$_4$…
Based on first-principles calculations, we have investigated the structural stability, electronic structures, and thermal properties of the monolayer XSi2N4 (X= Ti, Mo, W) and their lateral (LH) and vertical heterostructures (VH). We find that these heterostructures are energetically and dynamically stable due to high cohesive and binding energies, and no negative frequencies in the phonon spectra. The XSi2N4 (X= Ti, Mo, W) monolayers, the TiSi2N4/MoSi2N4-LH, MoSi2N4/WSi2N4-LH, and MoSi2N4/WSi2N4-VH possess a semiconducting nature with an indirect band gap ranging from 0.30 to 2.60 eV. At room…
Molybdenum disilicide (MoSi$_2$) is a very promising material for high temperature structural applications due to its high melting point (2030 °C), low density, high thermal conductivity and good oxidation resistance. However, MoSi$_2$ has limited ductility below 900 °C due to its anisotropic plastic deformation behaviour and high critical resolved shear stresses on particular slip systems. Nanoindentation of MoSi$_2$ microalloyed with aluminium, niobium or tantalum showed that all alloying elements cause a decrease in hardness. Analysis of surface slip lines indicated the activation of the ad…
We consider the Zitterbewegung of Dirac electrons in the monolayer graphene as the nonrelativistic analog of the phenomenon predicted by E. Schrödinger for the relativistic electrons in the free space. So we show that the Dirac electrons of monolayer graphene oscillate, i.e. produce fast fluctuation of an electron position around the mean value with rather high frequency but much less than the relativistic electrons in the free space. We also study relation between the Zitterbewegung of the conductivity electrons wave packet formed by the Fermi-Dirac distribution and the high-frequency complex…
In a latest experimental advance, graphene-like and insulating BeO monolayer was successfully grown over silver surface by molecular beam epitaxy (ACS Nano 15(2021), 2497). Inspired by this accomplishment, in this work we conduct first-principles based simulations to explore the electronic, mechanical properties and thermal conductivity of graphene-like BeO, MgO and CaO monolayers. The considered nanosheets are found to show desirable thermal and dynamical stability. BeO monolayer is found to show remarkably high elastic modulus and tensile strength of 408 and 53.3 GPa, respectively. The elect…
The lattice thermal conductivity ($κ$) of newly synthesized two-dimensional (2D) MoSi$_2$N$_4$ family and its associated abnormality is anatomized by $ab$ $initio$ phonon Boltzmann transport calculations. $κ$ of MoSi$_2$N$_4$ and WSi$_2$N$_4$ is found over 400 Wm$^{-1}$K$^{-1}$ at 300 K. $κ$ of MoSi$_2$Z$_4$ (Z=N,P,As) obeys Slack's rule of thumb, decreasing by one order of magnitude from Z=N to Z=As with 46 Wm$^{-1}$K$^{-1}$. However, in MSi$_2$N$_4$ (M=Mo,Cr,W,Ti,Zr,Hf), the variation of $κ$ with respect to M is anomalous, i.e. deviating from Slack's classic rule. For M in the same group, $κ…
Phonons are essential for understanding the thermal properties in monolayer transition metal dichalcogenides, which limit their thermal performance for potential applications. We investigate the lattice dynamics and thermodynamic properties of MoS2, MoSe2, and WS2 by first principles calculations. The obtained phonon frequencies and thermal conductivities agree well with the measurements. Our results show that the thermal conductivity of MoS2 is highest among the three materials due to its much lower average atomic mass. We also discuss the competition between mass effect, interatomic bonding …
Two-dimensional (2D) materials van der Waals heterostructures (vdWHs) provides a revolutionary route towards high-performance solar energy conversion devices beyond the conventional silicon-based pn junction solar cells. Despite tremendous research progress accomplished in recent years, the searches of vdWHs with exceptional excitonic solar cell conversion efficiency and optical properties remain an open theoretical and experimental quest. Here we show that the vdWH family composed of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers provides a compelling material platform for developing high-performa…
The recently experimentally synthesized monolayer $\mathrm{MoSi_2N_4}$ and $\mathrm{WSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020})) lack inversion symmetry, which allows them to become piezoelectric. In this work, based on ab initio calculations, we report structure effect on intrinsic piezoelectricity in septuple-atomic-layer $\mathrm{MSi_2N_4}$ (M=Mo and W), and six structures ($α_i$ ($i$=1 to 6)) are considered with the same space group.It is found that $\mathrm{MSi_2N_4}$ (M=Mo and W) with $α_i$ ($i$=1 to 6) all are indirect band gap semiconductors. Calculated res…
Ab-initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate the oxide plays an insignificant role, since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band-gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-…
We investigate the excitonic spectrum of MoS$_2$ monolayers and calculate its optical absorption properties over a wide range of energies. Our approach takes into account the anomalous screening in two dimensions and the presence of a substrate, both cast by a suitable effective Keldysh potential. We solve the Bethe-Salpeter equation using as a basis a Slater-Koster tight-binding model parameterized to fit ab initio MoS$_2$ band structure calculations. The resulting optical conductivity is in good quantitative agreement with existing measurements up to ultraviolet energies. We establish that t…
With the miniaturization and integration of nanoelectronic devices, efficient heat removal becomes a key factor affecting the reliable operation of the nanoelectronic device. With the high intrinsic thermal conductivity, good mechanical flexibility, and precisely controlled growth, two-dimensional (2D) materials are widely accepted as ideal candidates for thermal management materials. In this work, by solving the phonon Boltzmann transport equation (BTE) based on first-principles calculations, we comprehensively investigated the thermal conductivity of novel 2D layered MSi$_2$N$_4$ (M = Mo, W)…
The magneto-optical response of monolayer transition metal dichalcogenides (TMDs), including excitonic effects, is studied using a nanoribbon geometry. We compute the diagonal optical conductivity and the Hall conductivity. Comparing the excitonic optical Hall conductivity to results obtained in the independent particle approximation, we find an increase in the amplitude corresponding to one order of magnitude when excitonic effects are included. The Hall conductivities are used to calculate Faraday rotation spectra for MoS2 and WSe2. Finally, we have also calculated the diamagnetic shift of t…
Motivated by the excellent electronic and optoelectronic properties of two-dimensional (2D) tin oxides, we systematically investigated the thermal conductivity of monolayer SnO and SnO2by the first-principles calculations. The room-temperature thermal conductivity of monolayer SnO and SnO2reaches 9.6 W/(mK) and 98.8 W/(mK), respectively. The size effect is much weaker for monolayer SnO than for monolayer SnO2, due to the coexistence of size dependent and independent component in the thermal conductivity of monolayer SnO. The large difference between the thermal conductivity of 2D tin oxides ca…
Strain-Induced Curvature in Monolayer Graphene: Effects on Electronic Structure, Phonon Dynamics, and Lattice Thermal Conductivity
Shenzhen Technology University（深圳技术大学）；Universidade do Porto（波尔图大学）；University of Évora（埃武拉大学）；University of Aveiro（阿威罗大学）；University of Huddersfield（哈德斯菲尔德大学）；Universitat Politècnica de València（瓦伦西亚理工大学）
Phonon transports of group-VA elements (As, Sb, Bi) monolayer semiconductors have been widely investigated in theory, and Sb monolayer (antimonene) of them has recently been synthesized. In this work, phonon transport of SbAs monolayer is investigated from a combination of first-principles calculations and the linearized phonon Boltzmann equation. It is found that the lattice thermal conductivity of SbAs monolayer is lower than ones of both As and Sb monolayers, and the corresponding sheet thermal conductance is 28.8 $\mathrm{W K^{-1}}$ at room temperature. Calculated results show that group v…
We study the lattice thermal conductivity of two-dimensional (2D) pentagonal systems, such as penta-silicene and penta-germanene. Penta-silicene has been recently reported, while the stable penta-germanene, belonging to the same group IV element, is revealed firstly by our ab initio calculations. We find that both penta-silicene and penta-germanene at room temperature have ultralow lattice thermal conductivities $κ$ of 1.29 W/mK and 0.30 W/mK respectively. To the best of our knowledge, penta-germanene may have the lowest $κ$ in 2D crystal materials. We attribute ultralow $κ$ to the weak phonon…
Two-dimensional transition metal di-chalcogenides (TMDCs) have shown great potential as good quality thermoelectric materials at high temperature since past few years due to their suitable band gap tunabilty, low dimensionality and fantastic combination of electrical conductivity and lattice thermal conductivity. Here, a first principles calculations of electronic and thermoelectric performance of two dimensional monolayer HfS 2 , HfSe 2 and their Janus monolayer HfSSe has been performed with the help of density functional theory and Boltzmann transport equation. Thermodynamical stability of a…
2H phase (trigonal prismatic D3h) of layered two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a lot of interests due to the superior electronic and optoelectronic properties. However, flexible electronic devices and thermoelectric performances based on 2H phase have been potentially limited by the strain sensitive electronic band gap and high lattice thermal conductivity (kappa_L). Here, we predict and calculate two 1T (octahedral Oh) phase monolayer telluride materials SnTe2 and SiTe2 with soft mechanics, ultralow kappa_L and electronic properties. The calculated in…
The conductivity and Hall effect were measured in CVD-grown monolayer graphene as a function of the gate voltage, $V_{g}$, at temperatures down to $T$ = 2 K and in magnetic fields up to $B$ = 8 T. The minimal conductivity was observed at positive $V_{g}$ which shows the position of the charge neutrality point, $V_{NP}$. With decreasing $T$, $V_{NP}$ first decreases, but stop to decrease at low $T$. Hysteresis of conductivity shows similar behavior: it decreases with decreasing $T$ and disappears at low $T$. A significant asymmetry was observed at low density of charge carriers $|n|=(n,p)$: mob…
Experimental realization of single-layer MoSi2N4 is among the latest groundbreaking advances in the field of two-dimensional (2D) materials. Inspired by this accomplishment, herein we conduct first-principles calculations to explore the stability of MC2N4 (M= Cr, Mo, W, V, Nb, Ta, Ti, Zr, Hf) monolayers. Acquired results confirm the desirable thermal, dynamical and mechanical stability of MC2N4 (M= Cr, Mo, W, V) nanosheets. Interestingly, CrC2N4, MoC2N4 and WC2N4 monolayers are found to be semiconductors with band gaps of 2.32, 2.76 and 2.86 eV, respectively, using the HSE06 functional, wherea…
Single monolayer ferromagnetic perovskite SrRuO3 with high conductivity and strong ferromagnetism
NTT Basic Research Laboratories, NTT Corporation（NTT基础实验室，NTT公司）；The University of Tokyo（东京大学）；Hiroshima University（广岛大学）；Japan Synchrotron Radiation Research Institute (JASRI)（日本同步辐射研究所）
A recently derived formula for complex conductivity of the monolayer graphene is analyzed. We show that the real and imaginary parts in this formula obey the Kramers and Kronig dispersion relations which are a good test for validity of the formula for complex conductivity of monolayer graphene. We consider also an additional test for this formula, sensitive to the integral characteristic of the conductance such as the famous f sum rule. We write it in the two dimensional form and show that it fulfils identically if we admit the cyclotron mass as an effective one and take the principal value of…
Various types of defects in MoS2 monolayers and their influence on the electronic structure and transport properties have been studied using the Density-Functional based Tight-Binding method in conjunction with the Green's Function approach. Intrinsic defects in MoS2 monolayers significantly affect their electronic properties. Even at low concentration they considerably alter the quantum conductance. While the electron transport is practically isotropic in pristine MoS2, strong anisotropy is observed in the presence of defects. Localized mid-gap states are observed in semiconducting MoS2 that …
Thermal management materials are of critical importance for engineering miniaturized electronic devices, where theoretical design of such materials demands the evaluation of thermal conductivities which are numerically expensive. In this work, we applied the recently developed machine learning interatomic potential (MLIP) to evaluate the thermal conductivity of hexagonal boron nitride monolayers. The MLIP is obtained using the Gaussian approximation potential (GAP) method, and the resulting lattice dynamical properties and thermal conductivity are compared with those obtained from explicit fro…
Two-dimensional materials have attracted lots of research interests due to the fantastic properties that are unique to the bulk counterparts. In this paper, from the state-of-the-art first-principles, we predicted the stable structure of monolayer counterpart of the γ-CuI (Cuprous Iodide), which is a p-type wide bandgap semiconductor. The monolayer CuI presents multifunctional superiority in terms of electronic, optical, and thermal transport properties. Specifically, the ultralow thermal conductivity of 0.116 Wm-1K-1 is predicted for monolayer CuI, which is much lower than γ-CuI (0.997 Wm-1K-…
Two-dimensional thermoelectric materials with a figure of merit $ZT$, which is greater than 2.0 at room temperature, would be highly desirable in energy conversion since the efficiency is competitive to conventional energy conversion techniques. Here, we propose that the indium triphosphide (InP$_3$) monolayer offers an extraordinary $ZT$ of 2.2 at 300 K by using quantum calculations within the ballistic thermal transport region. A remarkably low and isotropic phononic thermal conductivity is founded, which is due to flat lattice vibration modes. This low thermal conductivity takes a major res…
The anharmonic behavior of phonons and intrinsic thermal conductivity associated with the Umklapp scattering in monolayer MoS2 sheet are investigated via first-principles calculations within the framework of density functional perturbation theory. In contrast to the negative Gruneissen parameter occurring in low frequency modes in graphene, positive Gruneissen parameter in the whole Brillouin zone is demonstrated in monolayer MoS2 with much larger Gruneissen parameter for acoustic modes than that for the optical modes, suggesting that monolayer MoS2 sheet possesses a positive coefficient of th…
Recently two-dimensional (2D) transition metal carbides and nitrides (MXenes) have gained significant attention in electronics and electrochemical energy conversion and storage devices where the heat production significantly affects the safety and performance of these devices. In this paper, we have studied the thermal transport in monolayer Ti3C2Tz, the first and most studied MXene, using density functional theory (DFT) and phonon Boltzmann transport equation and quantified the effect of surface termination (bare, fluorine and oxygen) on its lattice thermal conductivity. We found that thermal…
The seminal experimental discovery of the remarkably stable MoSi$_2$N$_4$ monolayer has led to a handful of predicted magnetic two-dimensional (2D) materials in the MA$_2$Z$_4$ family (M = transition metals, A = Si, Ge, and Z = N, P, As). These magnetic monolayers were predicted to be dynamically stable, but none of them has been synthesized to date. In this Research Letter, from first-principles thermodynamic stability analysis, we demonstrate that only the nitrides are thermodynamically stable and this occurs under N-rich conditions. Based on this finding, we propose two ferromagnetic, semic…
Elemental monolayers of the group 14 with a buckled honeycomb structure, namely silicene, germanene, stanene, and plumbene, are known to demonstrate a spin splitting as a result of an electric field parallel to their high symmetry axis which is capable of tuning their topological phase between a quantum spin Hall insulator and an ordinary band insulator. We perform first-principles calculations based on the density functional theory to quantify the spin-dependent band gaps and the spin splitting as a function of the applied electric field and extract the main coefficients of the invariant Hami…
By using a first-principles approach, monolayer PbI$_2$ is found to have great potential in thermoelectric applications. The linear Boltzmann transport equation is applied to obtain the perturbation to the electron distribution by different scattering mechanisms. The mobility is mainly limited by the deformation-potential interaction with long-wavelength acoustic vibrations at low carrier concentrations. At high concentrations, ionized impurity scattering becomes stronger. The electrical conductivity and Seebeck coefficient are calculated accurately over various ranges of temperature and carri…
We apply the generalized Boltzmann theory to describe thermoelectric transport properties of monolayer phosphorene in the presence of short- and long-range charged impurity interactions. First, we propose a low-energy Hamiltonian to explore the accurate electronic band structure of phosphorene in comparison with those results obtained by density-functional simulations. We explain the effect of the coupling between the conduction and valence bands on the thermoelectric properties. We show that the electric conductivity of phosphorene is highly anisotropic, while the Seebeck coefficient and figu…
Mechanical stability of the ZnIn2X4 monolayers. The ZnIn2S4 and ZnIn2Se4 are semiconductors with direct band gaps of 3.94 and 2.77 eV, respectively whereas the ZnIn2Te4 shows an indirect band gap of 1.84 eV at the G0W0 level. The optical properties achieved from the solution of the Bethe-Salpeter equation predict the exciton binding energy of the ZnIn2S4, ZnIn2Se4, and ZnIn2Te4 monolayers to be 0.51, 0.41, and 0.34 eV, respectively, suggesting the high stability of the excitonic states against thermal dissociation. Using the iterative solutions of the Boltzmann transport equation accelerated b…
Understanding the coupling between spin and phonons is critical for controlling the lattice thermal conductivity ($κ_l$) in magnetic materials, as we demonstrate here for CrX$_3$ (X = Br and I) monolayers. We show that these compounds exhibit large spin-phonon coupling (SPC), dominated by out-of-plane vibrations of Cr atoms, resulting in significantly different phonon dispersions in ferromagnetic (FM) and paramagnetic (PM) phases. Lattice thermal conductivity calculations provide additional evidence for strong SPC, where particularly large $κ_l$ is found for the FM phase. Most strikingly, PM a…
We present a new route for the fabrication of ultrathin (~1 nm) carbon films and membranes, whose electrical behavior can be tuned from insulating to conducting. Self-assembled monolayers of biphenyls are cross-linked by electrons, detached from the surfaces and subsequently pyrolized. Above 1000K, the cross-linked aromatic monolayer forms a mechanically stable graphitic phase. The transition is accompanied by a drop of the sheet resistivity from ~10^8 to ~10^2 kOhm/sq and a mechanical stiffening of the nanomembranes from ~10 to ~50 GPa. The technical applicability of the nanosheets is demonst…
In this paper, the electrical transport, thermal transport, and thermoelectric properties of three new Janus STe$_{2}$, SeTe$_{2}$, and Se$_{2}$Te monolayers are systematically studied by first-principles calculations, as well as the comparative with available literature's results using different methods. It is found that the Seebeck coefficient and conductivity have opposite dependence on temperature, and we illustrate this phenomenon in detail. The decrease of the thermoelectric power factor (PF) with temperature originates from the decrease in conductivity. To obtain accurate and convergent…
