Domain walls, topological defects that define the frontier between regions of different stacking in multilayer graphene, have proved to host exciting physics. The ability of tuning these topological defects in-situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate through a MEMS (micro-electromechanical system) actuator and magnetoresistance measurements the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers these topological defects, manifested as new quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Our findings are supported by theoretical calculations and constitute the first indication of the in-situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way to the use of reversible topological defects in electronic applications.
This is a Reply to a Comment by Tanaka and Machida. We provide some details of the derivation of the effective field theory for integer quantum Hall transitions using the non-Abelian chiral anomaly.
We report on a theoretical study of one-dimensional (1D) states localized at few-layer graphene system ribbon edges, and at interfaces between few-layer graphene systems with different valley Hall conductivities. These 1D states are topologically protected when valley mixing is neglected. We address the influence on their properties of stacking arrangement, interface structure, and external electric field perpendicular to the layers. We find that 1D states are generally absent at multilayer ribbon armchair direction edges, but present irrespective of crystallographic orientation at any interna…
The crystal structure of solid-state matter greatly affects its electronic properties. For example in multilayer graphene, precise knowledge of the lateral layer arrangement is crucial, since the most stable configurations, Bernal and rhombohedral stacking, exhibit very different electronic properties. Nevertheless, both stacking orders can coexist within one flake, separated by a strain soliton that can host topologically protected states. Clearly, accessing the transport properties of the two stackings and the soliton is of high interest. However, the stacking orders can transform into one a…
The Landau level spectra and the quantum Hall effect of ABA-stacked multilayer graphenes are studied in the effective mass approximation. The low-energy effective mass Hamiltonian may be partially diagonalized into an approximate block-diagonal form, with each diagonal block contributing parabolic bands except, in a multilayer with an odd number of layers, for an additional block describing Dirac-like bands with a linear dispersion. We fully include the band parameters and, taking into account the symmetry of the lattice, we analyze their affect on the block-diagonal Hamiltonian. Next-nearest …
We study the effect that the electron-electron interaction has on the properties of a multilayer electron system. We consider the case corresponding to filling factor unity in each layer. We find that as a function of the sample parameters the system has ferromagnetic, canted antiferromagnetic or paramagnetic interlayer spin correlations. These three ground states are QHE phases, because of the existence of a finite activation energy. In the ferromagnetic phase the gap is due to the intrawell exchange energy, whereas in the paramagnetic phase the gap appears due to the spatial modulation of th…
Interfacial Dzyaloshinskii-Moriya interaction (DMI) is experimentally investigated in Pt/Co/Pt multilayer films under strain. A strong variation (from 0.1 to 0.8 mJ/m$^2$) of the DMI constant is demonstrated at $\pm 0.1\%$ in-plane uniaxial deformation of the films. The anisotropic strain induces strong DMI anisotropy. The DMI constant perpendicular to the strain direction changes sign while the constant along the strain direction does not. Estimates are made showing that DMI manipulation with an electric field can be realized in hybrid ferroelectric/ferromagnetic systems. So, the observed eff…
We use broadband ferromagnetic resonance spectroscopy and x-ray diffraction to investigate the fundamental origin of perpendicular anisotropy in Co90Fe10/Ni multilayers. By careful evaluation of the spectroscopic g-factor, we determine the orbital moment along the out-of-plane and in-plane directions. For the multilayers, we find a direct relationship between the orbital moment asymmetry and the perpendicular anisotropy, consistent with the theory of Bruno [P.Bruno, Phys. Rev. B, 39, 865 (1989)]. A systematic x-ray diffraction study revealed the presence of a trigonal strain as high as 0.7 % i…
A Zener diode is a paradigmatic device in semiconductor-based electronics that consists of a pn junction where an external electric field induces a switching behavior in the current-voltage characteristics. We study Zener tunneling in HgTe quantum wells and graphene multilayers. We find that the tunneling transition probability depends asymmetrically on the parallel momentum of the carriers to the barrier. In HgTe quantum wells the asymmetry is the opposite for each spin, whereas for graphene multilayers it is the opposite for each valley degree of freedom. In both cases, a spin/valley current…
The so called quantum spin Hall phase is a topologically non trivial insulating phase that is predicted to appear in graphene and graphene-like systems. In this work we address the question of whether this topological property persists in multilayered systems. We consider two situations: purely multilayer graphene and heterostructures where graphene is encapsulated by trivial insulators with a strong spin-orbit coupling. We use a four orbital tight-binding model that includes the full atomic spin-orbit coupling and we calculate the $Z_{2}$ topological invariant of the bulk states as well as th…
We point out a practical way to induce a finite charge Hall conductivity in graphene via an off-diagonal strain. Our conclusions are based on a general analysis and supported by numerical examples. The interplay between a substrate-induced gap and the strain is discussed. We show that the substrate-induced gap itself does not break the symmetry that maps one valley onto the other, and hence does not yield a net charge Hall effect. The net charge Hall conductivity is found to be sizable and should be observable in the presence of both the gap and the strain. The sign of the Hall conductivity ca…
Multifunctional materials composed of ultrathin magnetic films with perpendicular magnetic anisotropy combined with ferroelectric substrates represent a new approach toward low power, fast, high density spintronics. Here we demonstrate Co/Ni multilayered films with tunable saturation magnetization and perpendicular anisotropy grown directly on ferroelectric PZT [Pb(Zr_xTi_1-x)O_3] substrate plates. Electric fields up to +/- 2 MV/m expand the PZT by 0.1% and generate at least 0.02% in-plane compression in the Co/Ni multilayered film. Modifying the strain with a voltage can reduce the coercive f…
The orbital structure of the quantum Hall ferromagnetic states in the zero-energy Landau level in chiral multilayer graphene (AB, ABC, ABCA, etc.\ stackings) is determined by the exchange interaction with all levels, including deep-lying states in the Dirac sea. This exchange field favors orbitally coherent states with a U(1) orbital symmetry if the filling factor $ν$ is not a multiple of the number of layers. If electrons fill the orbital sector of a fixed spin/valley component to one-half, e.g., at $ν=\pm3,\pm1$ in the bilayer and at $ν=\pm2,\pm6$ in the ABCA four-layer, there is a transitio…
We study the electronic structures and topological properties of $(M+N)$-layer twisted graphene systems. We consider the generic situation that $N$-layer graphene is placed on top of the other $M$-layer graphene, and is twisted with respect to each other by an angle $θ$. In such twisted multilayer graphene (TMG) systems, we find that there exists two low-energy flat bands for each valley emerging from the interface between the $M$ layers and the $N$ layers. These two low-energy bands in the TMG system possess valley Chern numbers that are dependent on both the number of layers and the stacking…
Magnetic skyrmions are topologically non-trivial nanoscale objects. Their topology, which originates in their chiral domain wall winding, governs their unique response to a motion-inducing force. When subjected to an electrical current, the chiral winding of the spin texture leads to a deflection of the skyrmion trajectory, characterized by an angle with respect to the applied force direction. This skyrmion Hall angle was believed to be skyrmion diameter-dependent. In contrast, our experimental study finds that within the plastic flow regime the skyrmion Hall angle is diameter-independent. At …
We propose a simple realization of the three-dimensional (3D) Weyl semimetal phase, utilizing a multilayer structure, composed of identical thin films of a magnetically-doped 3D topological insulator (TI), separated by ordinary-insulator spacer layers. We show that the phase diagram of this system contains a Weyl semimetal phase of the simplest possible kind, with only two Dirac nodes of opposite chirality, separated in momentum space, in its bandstructure. This particular type of Weyl semimetal has a finite anomalous Hall conductivity, chiral edge states, and occurs as an intermediate phase b…
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in finite-magnetic-field formalism, and observed crossover of integer quantum Hall effect from two independent monolayer type system to strongly coupled bilayer systems by changing the ratio of interlayer hopping energy and the gate voltage. We also discuss the case of multilayer systems with Bernal stacking
We show that an electric field applied to a strained topological Dirac semimetal, such as Na3Bi and Cd3As2, induces a spin Hall current that is quadratic in the electric field. By regarding the strain as an effective "axial magnetic field" for the Dirac electrons, we investigate the electron and spin transport semiclassically in terms of the chiral kinetic theory. The nonlinear spin Hall effect arises as the cross effect between the regular Hall effect driven by the axial magnetic field and the anomalous Hall effect coming from the momentum-space topology. It provides an efficient way to gener…
We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarka…
The intrinsic spin Hall conductivity of a two-dimensional gas confined to SrTiO$_3$, such as occurs at an LaAlO$_3$/SrTiO$_3$ interface, is calculated from the Kubo formula. The effect of strain in the [001] (normal to the quantum well direction) and the [111] direction is incorporated into a full tight-binding Hamiltonian. We show that the spin-charge conversion ratio can be significantly altered through strain and gate voltage by tuning the chemical potential. Strain direction is also a significant factor in the spin Hall response as this direction affects the alignment of the conduction ban…
When passing an optical medium in the presence of a magnetic field, the polarization of light can be rotated either when reflected at the surface (Kerr effect) or when transmitted through the material (Faraday rotation). This phenomenon is a direct consequence of the optical Hall effect arising from the light-charge carrier interaction in solid state systems subjected to an external magnetic field, in analogy with the conventional Hall effect. The optical Hall effect has been explored in many thin films and also more recently in 2D layered materials. Here, an alternative approach based on stra…
We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley Hall conductivity in the band transport regime, which originates from an enhanced side jump of a Dirac electron when it scatters off the gauge potential. By assuming a small residue charge density our theory reproduces qualitatively the temperature- and gap-dependence of the observed valley Hall effect at the charge neutral point. Our study suggests that the va…
Mechanical deformations of graphene induce a term in the Dirac Hamiltonian which is reminiscent of an electromagnetic vector potential. Strain gradients along particular lattice directions induce local pseudomagnetic fields and substantial energy gaps as indeed observed experimentally. Expanding this analogy, we propose to complement the pseudomagnetic field by a pseudoelectric field, generated by a time dependent oscillating stress applied to a graphene ribbon. The joint Hall-like response to these crossed fields results in a strain-induced charge current along the ribbon. We analyze in detai…
Graphene subject to high levels of shear strain leads to strong pseudo-magnetic fields resulting in the emergence of Landau levels. Here we show that, with modest levels of strain, graphene can also sustain a classical valley hall effect (VHE) that can be detected in nonlocal transport measurements. We provide a theory of the strain-induced VHE starting from the quantum Boltzmann equation. This allows us to show that, averaging over short-range impurity configurations destroys quantum coherence between valleys, leaving the elastic scattering time and inter-valley scattering rate as the only pa…
The transport properties on the two-dimensional surface of coupled multilayer heterostructures are studied in the integer quantum Hall states. We emphasize the criticality of the surface state and the phase coherent transport properties in the thermodynamic limit. A new, stable numerical algorithm for large scale conductance calculations in the transfer matrix approach is discussed in detail. It is then applied to a directed network model describing the quantum mechanical tunneling and impurity scattering of the multilayer edge states. We calculate the two-probe conductance in the direction pa…
We study interlayer transport of multilayer graphenes in magnetic field with various stacking structures (AB, ABC, and AA types) by calculating the Hall and longitudinal conductivities as functions of Fermi energy. Their behavior depends strongly on the stacking structures and selection of the layers. The Hall conductivity between different layers is no longer quantized. Moreover, for AB stacking, the interlayer conductivity vanishes around zero energy with increasing layer separation, and shows negative values in particular cases. The fact that longitudinal interlayer conductivity suppressed …
Motivated by the recent discovery of quantized spin Hall effect in InAs/GaSb quantum wells\cite{du2013}$^,$\cite{xu2014}, we theoretically study the effects of in-plane magnetic field and strain effect to the quantization of charge conductance by using Landauer-Butikker formalism. Our theory predicts a robustness of the conductance quantization against the magnetic field up to a very high field of 20 tesla. We use a disordered hopping term to model the strain and show that the strain may help the quantization of the conductance. Relevance to the experiments will be discussed.
We establish topological nature of Hall conductivity of graphene and other $Z_2$ crystals in 2D and 3D in the presence of inhomogeneous perturbations. To this end the lattice Weyl-Wigner formalism is employed. The non-uniform mechanical stress is considered, along with spatially varying magnetic field. The relation of the obtained topological invariant to level counting is clarified.
We experimentally image the magnetic precession phase of patterned spin Hall multilayer samples to study the rf driving field vector using time-resolved anomalous Nernst effect (TRANE) microscopy. Our ferromagnetic resonance (FMR) measurements quantify the phase and amplitude for both the magnetic precession and the electric current, which allows us to establish the total driving field orientation and the strength of spin Hall effect. In a channel of uniform width, we observe spatial variation of the FMR phase laterally across the channel. We interpret our findings in the context of electrical…
Magnetic skyrmions are topologically protected whirling spin textures that can be stabilized in magnetic materials in which a chiral interaction is present. Their limited size together with their robustness against the external perturbations promote them as the ultimate magnetic storage bit in a novel generation of memory and logic devices. Despite many examples of the signature of magnetic skyrmions in the electrical signal, only low temperature measurements, mainly in magnetic materials with B20 crystal structure, have demonstrated the skyrmions contribution to the electrical transport prope…
Superfluid properties of electron-hole pairs in a quantum Hall four-layer system are investigated. The system is considered as a solid state realization of a two-component superfluid Bose gas with dipole-dipole interaction. One superfluid component is formed in the top bilayer and the other component - in the bottom one. We obtain the dispersion equation for the collective mode spectrum and compute the critical parameters (the critical interlayer distance and the critical currents) versus the filling factor. We find that the critical currents of the components depend on each other. The maximum…
A large class of fractional quantum Hall (FQH) states can be classified according to their pattern of zeros, which describes the way ideal ground state wave functions go to zero as various clusters of electrons are brought together. In this paper we generalize this approach to classify multilayer FQH states. Such a classification leads to the construction of a class of non-Abelian multilayer FQH states that are closely related to $\hat{g}_k$ parafermion conformal field theories, where $\hat{g}_k$ is an affine simple Lie algebra. We discuss the possibility of some of the simplest of these non-A…
It is well known that skyrmions can be driven using spin-orbit torques due to the spin-Hall effect. Here we show an additional contribution in multilayered stacks arises from vertical spin currents due to inter-layer diffusion of a spin accumulation generated at a skyrmion. This additional interfacial spin torque is similar in form to the in-plane spin transfer torque, but is significantly enhanced in ultra-thin films and acts in the opposite direction to the electron flow. The combination of this diffusive spin torque and the spin-orbit torque results in skyrmion motion which helps to explain…
We demonstrate evidences of electronic transport via topological Dirac surface states in a thin film of strained HgTe. At high perpendicular magnetic fields, we show that the electron transport reaches the quantum Hall regime with vanishing resistance. Furthermore, quantum Hall transport spectroscopy reveals energy splittings of relativistic Landau levels specific to coupled Dirac surface states. This study provides new insights in the quantum Hall effect of topological insulator (TI) slabs, in the cross-over regime between two- and three-dimensional TIs, and in the relevance of thin TI films …
We study the electronic structures of ABA (Bernal) stacked multilayer graphenes in uniform perpendicular electric field, and show that the interplay of the trigonal warping and the potential asymmetry gives rise to a number of emergent Dirac cones nearly touching at zero energy. The band velocity and the energy region (typically a few tens of meV) of these gate-induced Dirac cones are tunable with the external electric field. In ABA trilayer graphene, in particular, applying an electric field induces a non-trivial valley Hall state, where the energy gap at the Dirac point is filled by chiral e…
The optical properties of two-dimensional materials can be effectively tuned by strain induced from a deformable substrate. In the present work we combine first-principles calculations based on density functional theory and the effective Bethe-Salpeter equation with high-pressure optical measurements in order to thoroughly describe the effect of strain and dielectric environment onto the electronic band structure and optical properties of a few-layered transition metal dichalcogenide. Our results show that WS2 remains fully adhered to the substrate at least up to a -0.6% in-plane compressive s…
A set of stacked two-dimensional electron systems in a perpendicular magnetic field exhibits a three-dimensional version of the quantum Hall effect if interlayer tunneling is not too strong. When such a sample is in a quantum Hall plateau, the edge states of each layer combine to form a chiral metal at the sample surface. We study the interplay of interactions and disorder in transport properties of the chiral metal, in the regime of weak interlayer tunneling. Our starting point is a system without interlayer tunneling, in which the only excitations are harmonic collective modes: surface magne…
We evidenced unconventionnal Anomalous Hall Effects (AHE) in 3d/5d (Co0.2nm/Ni0.6nm)N multilayers grown on a thin Pt layer or thin Au:W alloy. The inversion observed on AHE originates from the opposite sign of the spin-orbit coupling of Pt compared to Ni. Via advanced simulations methods for the description of the spin-current profiles based on the spin-dependent Boltzmann formalism, we extracted the spin Hall angle (SHA) of Pt and (Co/Ni) as well as the relevant transport parameters. The extracted SHA for Pt, +20%, is opposite to the one of (Co/Ni), giving rise to an effective AHE inversion f…
We report low-temperature transport measurements in strained InAs/Ga0.68In0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetoresistance of the helical edge states is related to the edge interaction effect and the disorder strength.
We report on a class of quantum spin Hall insulators (QSHIs) in strained-layer InAs/GaInSb quantum wells, in which the bulk gaps are enhanced by up to five folds as compared to the binary InAs/GaSb QSHI. Remarkably, with consequently increasing edge velocity, the edge conductance at zero and applied magnetic fields manifests time reversal symmetry (TRS) -protected properties consistent with Z2 topological insulator. The InAs/GaInSb bilayers offer a much sought-after platform for future studies and applications of the QSHI.
We study the effect of a uniform pseudomagnetic field, induced by a strain in a monolayer and double layer of gapped graphene, acting on excitons. For our analysis it is crucial that the pseudomagnetic field acts on the charges of the constituent particles of the excitons, i.e., the electrons and holes, the same way in contrast to a magnetic field. Moreover, using a circularly polarized laser field, the electrons and the holes can be excited only in one valley of the honeycomb lattice of gapped graphene. This breaks the time-reversal symmetry and provides the possibility to observe the various…
Using the parton construction, we build a three-dimensional (3D) multilayer fractional quantum Hall state with average filling ν= 1/3 per layer that is qualitatively distinct from a stacking of weakly coupled Laughlin states. The state supports gapped charge e/3 fermionic quasiparticles that can propagate both within and between the layers, in contrast to the quasiparticles in a multilayer Laughlin state which are confined within each layer. Moreover, the state has gapless neutral collective modes, a manifestation of an emergent "photon", which is minimally coupled to the fermionic quasipartic…
The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport theory and we found that both approaches exhibit similar characteristic features. The effects of the Gaussian bump are manifested by a decrease of the bend resistance, $R_B$, around zero-magnetic field and the occurrence of side-peaks in $R_B$. These features are explained as a consequence of bump-assisted scattering of electrons towards different terminals o…
We experimentally investigate the current-induced magnetization reversal in Pt/[Co/Ni]$_3$/Al multilayers combining the anomalous Hall effect and magneto-optical Kerr effect techniques in crossbar geometry. The magnetization reversal occurs through nucleation and propagation of a domain of opposite polarity for a current density of the order of 0.3 TA/m$^2$. In these experiments we demonstrate a full control of each stage: i)the Ørsted field controls the domain nucleation and ii) domain-wall propagation occurs by spin torque from the Pt spin Hall effect. This scenario requires an in-plane magn…
We show electrical coherent manipulation of quadrupole-split nuclear spin states in a GaAs/AlGaAs heterostructure on the basis of the breakdown of quantum Hall effect. The electric quadrupole splitting in nuclear spin energy levels is intentionally enhanced by applying an external stress to the heterostructure. Nuclear magnetic resonance spectra with clearly separated triple peaks are obtained, and Rabi oscillations are observed between the nuclear spin energy levels. The decay of the spin-echo signal is compared between the cases before and after the enhancement of quadrupole splitting.
In this work, we predict a hinged quantum spin-Hall (HQSH) effect featured by a pair of helical hinge modes in antiferromagnetic (AFM) topological insulator (TI) multilayers. This pair of helical hinge modes are localized on the hinges of the top and bottom surfaces of the AFM TI multilayers. Unlike the conventional QSH effect, the HQSH effect survives the breaking of time-reversal symmetry (TRS) and thus represents a different kind of topological phenomenon. The helical hinge modes are sustainable to inelastic scattering and TRS-breaking disorder, which can be observed in macroscopic samples.…
Recently, it has been pointed out that the twisting of bilayer WSe$_2$ would generate topologically non-trivial flat bands near the Fermi energy. In this work, we show that twisted bilayer WSe$_2$ (tWSe$_2$) with uniaxial strain exhibits a large nonlinear Hall (NLH) response due to the non-trivial Berry curvatures of the flat bands. Moreover, the NLH effect is greatly enhanced near the topological phase transition point which can be tuned by a vertical displacement field. Importantly, the nonlinear Hall signal changes sign across the topological phase transition point and provides a way to ide…
We theoretically study the correlated insulator states, quantum anomalous Hall (QAH) states, and field-induced topological transitions between different correlated states in twisted multilayer graphene systems. Taking twisted bilayer-monolayer graphene and twisted double-bilayer graphene as examples, we show that both systems stay in spin polarized, $C_{3z}$-broken insulator states with zero Chern number at 1/2 filling of the flat bands under finite displacement fields. In some cases these spin polarized, nematic insulator states are in the quantum valley Hall phase by virtue of the nontrivial…
The polymorph of ${\rm 8-Pmmn}$ borophene is an anisotropic Dirac material with tilted Dirac cones at two valleys. The tilting of the Dirac cones at two valleys are in opposite direction, which manifests itself via valley dependent Landau levels in presence of an in-plane electric field (Hall field). The sensitivity of the Landau levels on valley index causes valley polarized magnetotransport properties in presence of a Hall field, which is in contrast to the monolayer graphene with isotropic non-tilted Dirac cones. The longitudinal conductivity and Hall conductivity are evaluated by using lin…
We propose a mechanism for the quenching of the Shubnikov de Haas oscillations and the quantum Hall effect observed in epitaxial graphene. Experimental data show that the scattering time of the conduction electron is magnetic field dependent and of the order of the cyclotron orbit period, \textit{i.e.} can be much smaller than the zero field scattering time. Our scenario involves the extraordinary graphene $n=0$ Landau level of the uncharged layers that produces a high density of states at the Fermi level. We find that the coupling between this $n=0$ Landau level and the conducting states of t…
Recent experiments reveal that the strained bulk HgTe can be regard as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the magnetotransport properties of the HgTe surface states at magnetic field. We analytically derive the zero frequency Hall and collisional conductivities, and find that the substrate induced strain associated with the surface index of carriers, can result in the well seperated surface quantum Hall plateaus and Shubnikov-de Haas oscillations. These effects can be used to generate and detect surface polarization.
Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number $C$, that defines the quantized Hall conductance as $S_{xy}= C e^2/h$. Increasing $C$ is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution of this problem so far, with the majority of existing Chern insulators showing $C=1$. Here, by using state-of-the-art theoretical methods, we propose an efficie…
