arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2012.10493cond-mat.mtrl-sci
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无稀土亚铁磁 Mn4N 亚 20 nm 薄膜作为高温自旋电子学材料

Rare-earth-free ferrimagnetic Mn4N sub-20 nm thin films as high-temperature spintronic material

W. Zhou, C. T. Ma, T. Q. Hartnett, P. V. Balachandran, S. J. Poon

AI总结:

本文通过反应溅射在 MgO 衬底上成功制备出具有垂直磁各向异性的无稀土亚 20 nm Mn4N 亚铁磁薄膜,并验证其低饱和磁化强度和高热稳定性,为实用化斯格明子自旋电子学器件提供了新材料平台。

摘要:

具有垂直(面外)磁各向异性(PMA)和低饱和磁化强度的亚铁磁合金薄膜(如 GdCo 和 Mn4N)被预测有利于在室温应用中承载小尺寸 Néel 斯格明子。由于界面 Dzyaloshinskii-Moriya 相互作用(DMI)呈指数衰减,且可用于驱动斯格明子运动的自旋轨道矩作用范围有限,亚铁磁层的厚度必须很小,最好低于 20 nm。虽然已有通过溅射沉积制备的亚 20 nm 稀土-过渡金属(RE-TM)亚铁磁薄膜的例子,但迄今为止,具有 PMA 的无稀土亚 20 nm Mn4N 薄膜仅报道可通过分子束外延实现,而该方法不适合大规模生产。在此,我们报道了在 MgO 衬底上通过反应溅射,在 400-450 °C 衬底温度下成功热生长出具有 PMA 的亚 20 nm Mn4N 薄膜。这些 Mn4N 薄膜是通过高温真空退火工艺降低 MgO 衬底表面粗糙度而实现的。最优薄膜在室温下表现出低饱和磁化强度(Ms = 43 emu/cc)、低磁各向异性能(0.7 Merg/cc)以及接近 1 的剩余磁化强度与饱和磁化强度之比(Mr/Ms)。初步的从头算密度泛函理论(DFT)计算证实了在 MgO 上生长的 Mn4N 具有亚铁磁基态。这些磁学特性,加上 Mn4N 薄膜相较于 RE-TM 薄膜具有的高热稳定性,为未来研究实用化斯格明子自旋电子学材料提供了平台。

英文摘要:

Ferrimagnetic alloy thin films that exhibit perpendicular (out-of-plane) magnetic anisotropy (PMA) with low saturation magnetization, such as GdCo and Mn4N, were predicted to be favorable for hosting small Neel skyrmions for room temperature applications. Due to the exponential decay of interfacial Dzyaloshinskii-Moriya interaction (DMI) and the limited range of spin-orbit-torques, which can be used to drive skyrmion motion, the thickness of the ferrimagnetic layer has to be small, preferably under 20 nm. While there are examples of sub-20 nm, rare earth-transition metal (RE-TM), ferrimagnetic thin films fabricated by sputter deposition, to date rare-earth-free sub-20 nm Mn4N films with PMA have only been reported to be achieved by molecular beam epitaxy, which is not suitable for massive production. Here we report the successful thermal growth of sub-20 nm Mn4N films with PMA at 400-450 °C substrate temperatures on MgO substrates by reactive sputtering. The Mn4N films were achieved by reducing the surface roughness of MgO substrate through a high-temperature vacuum annealing process. The optimal films showed low saturation magnetization (Ms = 43 emu/cc), low magnetic anisotropy energy (0.7 Merg/cc), and a remanent magnetization to saturation magnetization ratio (Mr/Ms) near 1 at room temperature. Preliminary ab-initio density functional theory (DFT) calculations have confirmed the ferrimagnetic ground state of Mn4N grown on MgO. The magnetic properties, along with the high thermal stability of Mn4N thin films in comparison with RE-TM thin films, provide the platform for future studies of practical skyrmion-based spintronic materials.

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