Researches on anomalous Hall effect (AHE) have been lasting for a century to make clear the underlying physical mechanism. Generally, the AHE appears in magnetic materials, in which extrinsic process related to scattering effects and intrinsic contribution connected with Berry curvature are crucial. Recently, AHE has been counterintuitively observed in non-magnetic topological materials and attributed to the existence of Weyl points. However, the Weyl point scenario would lead to unsaturated AHE even in large magnetic fields and contradicts the saturation of AHE in several tesla (T) in experiments. In this work, we investigate the Hall effect of ZrTe5 and HfTe5 thin flakes in static ultrahigh magnetic fields up to 33 T. We find the AHE saturates to 55 (70) Ohm^-1*cm^-1 for ZrTe5 (HfTe5) thin flakes above ~ 10 T. Combining detailed magnetotransport experiments and Berry curvature calculations, we clarify that the splitting of massive Dirac bands without Weyl points can be responsible for AHE in non-magnetic topological materials ZrTe5 and HfTe5 thin flakes. This model can identify our thin flake samples to be weak topological insulators and serve as a new tool to probe the band structure topology in topological materials.
Magnetic Weyl semimetals attract considerable interest not only for their topological quantum phenomena but also as an emerging materials class for realizing quantum anomalous Hall effect in the two-dimensional limit. A shandite compound Co3Sn2S2 with layered Kagome-lattices is one such material, where vigorous efforts have been devoted to synthesize the two-dimensional crystal. Here we report a synthesis of Co3Sn2S2 thin flakes with a thickness of 250 nm by chemical vapor transport method. We find that this facile bottom-up approach allows the formation of large-sized Co3Sn2S2 thin flakes of …
ZrTe5 is a layered material that exhibits intricate topological effects. Intensive theoretically and experimental efforts have been devoted to try to understand the physics in this materials. In this paper the temperature dependent magneto-transport properties of ZrTe5 thin flakes are investigated. A characteristic temperature T* is observed in the temperature dependence of three different types of magnetoresistance simultaneously, which are the saturated Hall anomaly, the chiral anomaly and the longitudinal magnetoresistance. Furthermore, the value of T* decreases monotonically from 200K to 1…
A clear gate voltage tunable weak antilocalization and a giant magnetoresistance of 400 percent are observed at 1.9 K in single layer graphene with an out-of-plane field. A large magnetoresistance value of 275 percent is obtained even at room temperature implying potential applications of graphene in magnetic sensors. Both the weak antilocalization and giant magnetoresistance persists far away from the charge neutrality point in contrast to previous reports, and both effects are originated from charged impurities. Interestingly, the signatures of Shubnikov-de Haas oscillations and the quantum …
Anomalous Transverse Response and Multi-Field Ferrialtermagnetic-Ferroelectric Valve with CrSb Flakes
Huazhong University of Science and Technology（华中科技大学）；Beijing Institute of Technology（北京理工大学）；Chongqing University of Posts and Telecommunications（重庆邮电大学）
研究提出铁磁反铁磁体概念，以 CrSb 薄片实现，集成铁电体和 Cu 间隔层设计出铁磁反铁磁-铁电阀，该阀有高自旋过滤率等特性，确立了铁磁反铁磁体在多场控制等自旋电子学和电子学方面的丰富平台地位。
Most canted antiferromagnets are also anomalous Hall antiferromagnets (AHE AFMs), i.e. they have an anomalous Hall response and other responses with the same symmetry requirements. We suggest that AHE AFMs are promising materials as hosts for high-temperature quantum anomalous Hall effects. By considering models of two-dimensional (001) perovskite layers with strong spin-orbit coupling that isolates an effective total angular momentum $\tilde{j}= \frac{1}{2}$ subspace of the $t_{2g}$ manifold, we propose a strategy to engineering quantum anomalous Hall antiferromagnets.
We propose a new family of the d0 orbital XY (X = K, Rb, Cs; Y = N, P, As, Sb, Bi) monolayers with abundant and novel topology and valley properties. The KN, RbN, RbP, RbAs, CsP, CsAs, and CsSb monolayers possess remarkable quantum anomalous Hall effect (QAHE). CsSb monolayer also exhibits extraordinary valley QAHE with giant splitting. Moreover, the topological properties of XY monolayers can be effciently tuned by the in-plane strain, owing to the strain-induced band inversion between the px;y and pz orbitals. Our findings suggest that the d0 orbital XY monolayers can be good candidates for …
The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated the intrinsic anomalous Hall conductivity from the Berry curvature of the Bloch states using first-principles methods. The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long wavelength fluctuations of the spin orientation at finite temperatures. The quantitative agreement between theory and exper…
The chirality associated with broken time reversal symmetry in magnetically doped topological insulators has important implications to the quantum transport phenomena. Here we report the anomalous Hall effect studies in Mn- and Cr-doped Bi$_2$Te$_3$ topological insulators with varied thickness and doping content. By tracing the chirality of the Hall loops, we find that the Mn-type anomalous Hall effect with clockwise chirality is strengthened by the reduction of film thickness, which is opposite to that of the Cr-type anomalous Hall effect with counterclockwise chirality. We provide a phenomen…
We perform a first principles calculation of the anomalous Hall effect in ferromagnetic bcc Fe. Our theory identifies an intrinsic contribution to the anomalous Hall conductivity and relates it to the k-space Berry phase of occupied Bloch states. The theory is able to account for both dc and magneto-optical Hall conductivities with no adjustable parameters.
The quantum anomalous Hall effect has recently been observed experimentally in thin films of Cr doped (Bi,Sb)$_2$Te$_3$ at a low temperature ($\sim$ 30mK). In this work, we propose realizing the quantum anomalous Hall effect in more conventional diluted magnetic semiconductors with doped InAs/GaSb type II quantum wells. Based on a four band model, we find an enhancement of the Curie temperature of ferromagnetism due to band edge singularities in the inverted regime of InAs/GaSb quantum wells. Below the Curie temperature, the quantum anomalous Hall effect is confirmed by the direct calculation …
In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall angle or the anomalous Hall angle is not small. Using the proper conductivity relation, we reveal an unexpected magnetoresistance (MR) induced by the anomalous Hall effect (AHE). A $B$-linear MR arises and the sign of the slope depends on the sign of the anomalous Hall angle, giving rise to a characteristic bowtie shape. The Hall resistance in a single-band syst…
The quantum anomalous Hall effect refers to the quantization of Hall effect in the absence of applied magnetic field. The quantum anomalous Hall effect is of topological nature and well suited for field-free resistance metrology and low-power information processing utilizing dissipationless chiral edge transport. In this Perspective, we provide an overview of the recent achievements as well as the materials challenges and opportunities, pertaining to engineering intrinsic/interfacial magnetic coupling, that are expected to propel future development of the field.
Metallic antiferromagnets with noncollinear orientation of magnetic moments provide a playground for investigating spin-dependent transport properties by analysis of the anomalous Hall effect. The intermetallic compound Mn5Si3 is an intinerant antiferromagnet with collinear and noncollinear magnetic structures due to Mn atoms on two inequivalent lattice sites. Here, magnetotransport measurements on polycrystalline thin films and a single crystal are reported. In all samples, an additional contribution to the anomalous Hall effect attributed to the noncollinear arrangment of magnetic moments is…
We measure the ordinary and the anomalous Hall effect in a set of yttrium iron garnet$|$platinum (YIG$|$Pt) bilayers via magnetization orientation dependent magnetoresistance experiments. Our data show that the presence of the ferrimagnetic insulator YIG leads to an anomalous Hall like signature in Pt, sensitive to both Pt thickness and temperature. Interpretation of the experimental findings in terms of the spin Hall anomalous Hall effect indicates that the imaginary part of the spin mixing interface conductance $G_{\mathrm{i}}$ plays a crucial role in YIG$|$Pt bilayers. In particular, our da…
Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induced anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using a time-resolved optoelectronic auto-correlation spectroscopy, we find that the decay time of the anomalous Hall voltage exce…
Based on the exact muffin-tin orbitals (EMTOs), we developed a first-principles method to calculate the current operators and investigated the anomalous Hall effect in bcc Fe as an example, with which we successfully separated the skew scattering contribution from the side jump and intrinsic contributions by fitting the scaling law with the introduction of sparse impurities. By investigating the temperature dependence of the anomalous Hall effect in bulk Fe, we predicted a fluctuated anomalous Hall angle as a function of temperature when considering only phonons, which, in the future, can be m…
We point out that, contrary to an assertion by Chen, Bergman and Burkov [Phys. Rev. B 88, 125110 (2013)], the non-quantized part of the intrinsic anomalous Hall conductivity can indeed be expressed as a Fermi-surface property even when Weyl points are present in the bandstructure.
We measure the low-field Hall resistivity of a magnetically-doped two-dimensional electron gas as a function of temperature and electrically-gated carrier density. Comparing these results with the carrier density extracted from Shubnikov-de Haas oscillations reveals an excess Hall resistivity that increases with decreasing temperature. This excess Hall resistivity qualitatively tracks the paramagnetic polarization of the sample, in analogy to the ferromagnetic anomalous Hall effect. The data are consistent with skew-scattering of carriers by disorder near the crossover to localization.
A new type of anomalous Hall effect is shown to arise from the interaction of conduction electrons with dipolar spin waves in ferromagnets. This effect exists even in homogeneous ferromagnets without relativistic spin-orbit coupling. The leading contribution to the Hall conductivity is proportional to the chiral spin correlation of dynamical spin textures and is physically understood in terms of the skew scattering by dipolar magnons.
We study temperature effect on anomalous viscosity of Graphene Hall fluid within quantum many-vortex hydrodynamics. The commonly observed filling fractions, $ν$ in the range $0 < ν< 2$ is considered. An expression for anomalous viscosity dependent on a geometric parameter-Hall expansion coefficient, is obtained at finite temperatures. It arises from strained induced pseudo-magnetic field in addition to an anomalous term in vortex velocity, which is responsible for re-normalization of vortex-vortex interactions. We observed that both terms greatly modify the anomalous viscosity as well as an en…
The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.
Scattering by multiple scatterers sometimes gives rise to nontrivial consequences such as anomalous Hall effect. We here study a mechanism for anomalous Hall effect which originates from the correlation of nonmagnetic impurities and localized moments; a Hall effect induced by vector spin chirality. Using a scattering theory approach, we study the skew scattering induced by the scattering processes that involve two magnetic moments and a non-magnetic impurity, which is proportional to the vector spin chirality of the spins in the vicinity of the non-magnetic impurity. Furthermore, we show that …
Observation of the quantum anomalous Hall effect (QAHE) in MnBi$_2$Te$_4$ flakes is one of the most exciting results in the study of the intrinsic magnetic topological insulator MnBi$_2$Te$_4$ and related compounds. This fascinating result is yet to be reproduced two years after its first report. The quality of starting MnBi$_2$Te$_4$ single crystals is believed to be the key factor. An interesting and important question to address is what is the right quality to enable the QAHE. In this perspective, we present possible approaches to tuning the magnetic and topological properties of MnBi$_2$Te…
We engineer quantum anomalous Hall effect in silicene via doping 3d transition metals. We show that there exists a stable quantum anomalous Hall effect in Vanadium doped silicene using both analytical model and Wannier interpolation. We also predict the quantum valley Hall effect and electrically tunable topological states could be realized in certain transition metal doped silicene where the energy band inversion occurs. Our finding provides new scheme for the realization of quantum anomalous Hall effect and platform for electrically controllable topological states.
A theoretical formulation of magnetoresistance effect in a metallic ferromagnetic/nonmagnetic bilayer originated from the charge-spin conversion by the anomalous Hall effect is presented. Analytical expressions of the longitudinal and transverse resistivities in both nonmagnet and ferromagnet are obtained by solving the spin diffusion equation. The magnetoresistance generated from charge-spin conversion purely caused by the anomalous Hall effect in the ferromagnet is found to be proportional to the square of the spin polarizations in the ferromagnet and has fixed sign. We also find additional …
Ab initio prediction of anomalous Hall effect in antiferromagnetic CaCrO$_3$
Institute of Scientific and Industrial Research, Osaka University（大阪大学科学工业研究所）；Department of Precision Engineering, Graduate School of Engineering, Osaka University（大阪大学大学院工学研究科精密工程专攻）
We present here a way to modulate the anisotropic magnetoresistance (AMR) by anomalous Hall signal and thus measure the domain wall (DW) motion velocity at near-coercivity. We study the magnetization relaxation at the constant field in the longitudinal (Rxx) Hall geometry. We observed asymmetric Rxx peaks that appear at the DW pinning fields. This unusual magnetoresistance behavior is explained by considering the AMR modulation by the anomalous Hall voltage. In the proposed method, using the magnetization relaxation, the real-time DW velocity measurement is much easier in comparison to the oth…
As current flows through a Pt/Co/Pt trilayer, spin Hall effect induced by charge current in the Pt layer leads to spin accumulation at the Co/Pt interfaces. Our experiment and calculation show an indication of the effect of spin accumulation at the Co/Pt interfaces on anomalous Hall coefficient in the Pt/Co/Pt sandwich, which depends on the Pt layer thickness and spin diffusion length in Pt layer. The ratio of the longitudinal current in the Pt cap layer due to anomalous Hall effect to the injected transverse current in the Co layer increases with the Pt cap layer thickness.
A comprehensive magnetotransport study including resistivity ($ρ_{xx}$) at various fields, isothermal magnetoresistance and Hall resistivity ($ρ_{xy}$) has been carried out at different temperatures on the Co$_{2}$TiAl Heusler alloy. Co$_{2}$TiAl alloy shows a paramagnetic (PM) to ferromagnetic (FM) transition below the curie temperature (T$_{C}$) $\sim$ 125 K. In the FM region, resistivity and magnetoresistance reveals a spin flip electron-magnon scattering and the Hall resistivity unveils the anomalous Hall resistivity ($ρ_{xy}^{AH}$). Scaling of anomalous Hall resistivity with resistivity e…
We calculate the localization corrections to the anomalous Hall conductivity related to the contribution of spin-orbit scattering into the current vertex (side-jump mechanism). We show that in contrast to the ordinary Hall effect, there exists a nonvanishing localization correction to the anomalous Hall resistivity. The correction to the anomalous Hall conductivity vanishes in the case of side-jump mechanism, but is nonzero for the skew scattering. The total correction to the nondiagonal conductivity related to both mechanisms, does not compensate the correction to the diagonal conductivity.
Full Heusler compounds with Cobalt as a primary element show anomalous transport properties owing to the Weyl fermions and broken time-reversal symmetry. We present here the study of anomalous Hall effect (AHE) in Co2FeGe Heusler compound. The experiment reveals anomalous Hall conductivity (AHC) 100 S/cm at room temperature with an intrinsic contribution of 78 S/cm . The analysis of anomalous Hall resistivity suggests the scattering independent intrinsic mechanism dominates the overall behaviour of anomalous Hall resistivity. The first principles calculation reveals that the Berry curvature or…
Despite being known for a long time the anomalous Hall effect still attracts attention because of its complex origins, its connection to topology and because it serves as a useful probe of the magnetic order. Here we study the anomalous Hall effect using automatic high-throughput calculation scheme. We calculate the intrinsic anomalous Hall effect in 2871 ferromagnetic materials. We use these results to study general properties of the anomalous Hall effect such as its dependence on the strength of the spin-orbit coupling or magnetization. We also examine the origin of the anomalous Hall effect…
Materials exhibiting controllable magnetic phase transitions are currently in demand for many spintronics applications. Here we investigate from first principles the electronic structure and intrinsic anomalous Hall, spin Hall and anomalous Nernst response properties of the FeRh metallic alloy which undergoes a thermally driven antiferromagnetic-to-ferromagnetic phase transition. We show that the energy band structures and underlying Berry curvatures have important signatures in the various Hall effects. Specifically, the suppression of the anomalous Hall and Nernst effects in the AFM state an…
Itinerant ferromagnets constitute an important class of materials wherein spin-polarization can affect the electric transport properties in nontrivial ways. One such phenomenon is anomalous Hall effect which depends on the details of the band structure such as the amount of band crossings in the valence band of the ferromagnet. Here, we have found extraordinary anomalous Hall effect in an itinerant ferromagnetic metal LaCrSb3. The rather two-dimensional nature of the magnetic subunit imparts large anisotropic anomalous Hall conductivity of 1250 S/cm at 2K. Our investigations suggest that a str…
Scaling of the anomalous Hall conductivity to longitudinal conductivity, has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt films. The relationship between electron transport and temperature reveals a quantitatively insignificant Coulomb interaction in these films while the temperature dependent anomalous Hall conductivity experiences quantum correction from electron localization. At the onset of this correction, the low-temperature anomalous Hall resistivity begins to be saturat…
Investigating the scaling behavior of annealed Ga$_{1-x}$Mn$_{x}$As anomalous Hall coefficients, we note a universal crossover regime where the scaling behavior changes from quadratic to linear, attributed to the anomalous Hall Effect intrinsic and extrinsic origins, respectively. Furthermore, measured anomalous Hall conductivities when properly scaled by carrier concentration remain constant, equal to theoretically predicated values, spanning nearly a decade in conductivity as well as over 100 K in T$_{C}$. Both the qualitative and quantitative agreement confirms the validity of new equations…
We employ a helicity-basis kinetic equation approach to investigate the anomalous Hall effect in two-dimensional narrow-band semiconductors considering both Rashba and extrinsic spin-orbit (SO) couplings, as well as a SO coupling directly induced by an external driving electric field. Taking account of long-range electron-impurity scattering up to the second Born approximation, we find that the various components of the anomalous Hall current fit into two classes: (a) side-jump and (b) skew scattering anomalous Hall currents. The side-jump anomalous Hall current involves contributions not only…
In most conductors current flow perpendicular to electric field direction (Hall current) can be explained in terms of the Lorentz forces present when charged particles flow in an external magnetic field. However, as established in the very early work of Edwin Hall, ferromagnetic conductors such as Fe, Co, and Ni have an anomalous Hall conductivity contribution that cannot be attributed to Lorentz forces and therefore survives in the absence of a magnetic field. Although the anomalous Hall effect is experimentally strong, it has stood alone among metallic transport effects for much of the last …
Anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) in a variety of ferromagnetic metals including pure metals, oxides, and chalcogenides, are studied to obtain unified understandings of their origins. We show a universal scaling behavior of anomalous Hall conductivity $σ_{xy}$ as a function of longitudinal conductivity $σ_{xx}$ over five orders of magnitude, which is well explained by a recent theory of the AHE taking into account both the intrinsic and extrinsic contributions. ANE is closely related with AHE and provides us with further information about the low-temperature electro…
We have carried out a comprehensive study of the intrinsic anomalous Hall effect and spin Hall effect of several chiral antiferromagnetic compounds, Mn$_3X$ ($X$ = Ge, Sn, Ga, Ir, Rh and Pt) by $ab~initio$ band structure and Berry phase calculations. These studies reveal large and anisotropic values of both the intrinsic anomalous Hall effect and spin Hall effect. The Mn$_3X$ materials exhibit a non-collinear antiferromagnetic order which, to avoid geometrical frustration, forms planes of Mn moments that are arranged in a Kagome-type lattice. With respect to these Kagome planes, we find that b…
We study the role played by electron-magnon scattering in the anomalous Hall effect. We find that it has important contributions distinct from other scattering processes like impurities scattering and phonon scattering. As a demonstration, we calculate the Hall conductivity for a two dimensional Dirac model. The result indicates that as system control parameter varies, the competition between magnon scattering and other types of scattering changes the Hall conductivity drastically. In particular, the side jump contribution could acquire a strong temperature dependence.
Co3Sn2S2 is a ferromagnetic Weyl semimetal that has been the subject of intense scientific interest due to its large anomalous Hall effect. We show that the coupling of this material's topological properties to its magnetic texture leads to a strongly exchange biased anomalous Hall effect. We argue that this is likely caused by the coexistence of ferromagnetism and spin glass phases, the latter being driven by the geometric frustration intrinsic to the Kagome network of magnetic ions.
The anomalous Hall effect in a magnetic two-dimensional electron gas with Rashba spin-orbit coupling is studied within the Kubo-Streda formalism in the presence of pointlike potential impurities. We find that all contributions to the anomalous Hall conductivity vanish to leading order in disorder strength when both chiral subbands are occupied. In the situation that only the majority subband is occupied, all terms are finite in the weak scattering limit and the total anomalous Hall conductivity is dominated by skew scattering. We compare our results to previous treatments and resolve some of t…
The interplay of magnetism and topology opens up the possibility for exotic linear response effects, such as the anomalous Hall effect and the anomalous Nernst effect, which can be strongly enhanced by designing a strong Berry curvature in the electronic structure. It is even possible to utilize this to create a quantum anomalous Hall state at high temperatures by reducing the dimensionality. Magnetic Heusler compounds are a promising class of materials for this purpose because they grow in thin films, have a high Curie temperature, and their electronic structure hosts strong topological featu…
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall effect also leads to spin accumulation at the surfaces perpendicular to both the current and magnetization direction. Here we experimentally demonstrate that the spin accumulation, subsequent spin backflow, and spin-charge conversion can give rise to a different type of spin current related magnetoresistance, dubbed here as the anomalous Hall magnetoresistan…
Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic phase transition. Epitaxial FeRh films grown on MgO (001) substrates exhibit a clear magnetic and electronic phase transition. By performing anomalous Hall and anomalous Nernst effect measurements over a wide range of temperatures, we demonstrate that the thermally driven transition shows distinctly different transverse transport on both side of the phase tran…
Magnetic topological insulators (MTIs) offer a combination of topologically nontrivial characteristics and magnetic order and show promise in terms of potentially interesting physical phenomena such as the quantum anomalous Hall (QAH) effect and topological axion insulating states. However, the understanding of their properties and potential applications have been limited due to a lack of suitable candidates for MTIs. Here, we grow two-dimensional single crystals of Mn(SbxBi(1-x))2Te4 bulk and exfoliate them into thin flakes in order to search for intrinsic MTIs. We perform angle-resolved phot…
The relativistic nature of the electron motion underlies the intrinsic part of the anomalous Hall effect, believed to dominate in ferromagnetic (Ga,Mn)As. In this paper, we concentrate on the crystal band structure as an important facet to the description of this phenomenon. Using different k.p and tight-binding computational schemes, we capture the strong effect of the bulk inversion asymmetry on the Berry curvature and the anomalous Hall conductivity. At the same time, we find it not to affect other important characteristics of (Ga,Mn)As, namely the Curie temperature and uniaxial anisotropy …
In the anomalous Hall effect (AHE), the magnetization, electric field and the Hall current are presumed to be mutually vertical to each other. In this work, we propose an unconventional AHE where the magnetization, the electric field and Hall current stay inside the same plane. Such an AHE is odd under time-reversal and exists even when the magnetization is parallel to the electric field or Hall current, different from the planar Hall effect which is even under time-reversal. Here, we term it parallel anomalous Hall effect (PAHE). We reveal that the PAHE exists when all the point group rotatio…
The anomalous Hall effect (AHE) in the Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity $ρ_{xx}$ as well as the anomalous Hall resistivity $ρ_{ahe}$. Analyzing the scaling behavior of $ρ_{ahe}$ in terms of $ρ_{xx}$ points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds.
