arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2012.00421cond-mat.mtrl-scicond-mat.stat-mechphysics.class-phphysics.ins-det
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从300 K局部加热到熔点的硅微棒:从共振频移测量温度分布

Silicon cantilevers locally heated from 300K up to the melting point: temperature profile measurement from their resonances frequency shift

Basile Pottier, Felipe Aguilar, Mickaël Geitner, Francisco Melo, Ludovic Bellon

摘要:

当被加热时,微谐振器呈现其谐振频率的偏移。我们专门研究了局部激光吸收加热的硅晶体,并从理论和实验上评估了它们的温度分布及其与机械共振的相互作用。我们提出了我们早期模型的增强版本[F. Aguilar Sandoval等人,J. Appl.Phys.117,234503(2015)],包括弹性和几何结构温度依赖性,表明后者可以占第一弯曲模式的观察到的偏移的20%。温度曲线的描述考虑到热夹紧条件,在高温下的辐射,和较低的电导率比体硅由于声子限制。由于热方程中的空间功率等效性,沿着悬臂扫描加热点可以直接显示温度分布。最后,频移测量可以用来推断温度场,精度为百分之几。

英文摘要:

When heated, micro-resonators present a shift of their resonance frequencies. We study specifically silicon cantilevers heated locally by laser absorption, and evaluate theoretically and experimentally their temperature profile and its interplay with the mechanical resonances. We present a enhanced version of our earlier model [F. Aguilar Sandoval et al., J. Appl. Phys. 117, 234503 (2015)] including both elasticity and geometry temperature dependency, showing that the latter can account for 20% of the observed shift for the first flexural mode. The temperature profile description takes into account thermal clamping conditions, radiation at high temperature, and lower conductivity than bulk silicon due to phonon confinement. Thanks to a space-power equivalence in the heat equation, scanning the heating point along the cantilever directly reveals the temperature profile. Finally, frequency shift measurement can be used to infer the temperature field with a few percent precision.

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