Intense current pulses are often required to operate microelectronic and spintronic devices. Notably, strong current pulses have been shown to induce magnetoresistance changes attributed to domain reorientation in antiferromagnet/heavy metal bilayers and non-centrosymmetric antiferromagnets. In such cases, nonmagnetic resistivity changes may dominate over signatures of antiferromagnetic switching. We report systematic measurements of the current-induced changes of the transverse and longitudinal resistance of Pt and Pt/NiO layers deposited on insulating substrates, namely Si/SiO$_2$, Si/Si$_3$N$_4$, and Al$_2$O$_3$. We identify the range of pulse amplitude and length that can be used without affecting the resistance and show that it increases with the device size and thermal diffusivity of the substrate. No significant difference is observed in the resistive response of Pt and NiO/Pt devices, thus precluding evidence on the switching of antiferromagnetic domains in NiO. The variation of the transverse resistance is associated to a thermally-activated process in Pt that decays following a double exponential law with characteristic timescales of a few minutes to hours. We use a Wheatstone bridge model to discriminate between positive and negative resistance changes, highlighting competing annealing and electromigration effects. Depending on the training of the devices, the transverse resistance can either increase or decrease between current pulses. Further, we elucidate the origin of the nonmonotonic resistance baseline, which we attribute to training effects combined with the asymmetric distribution of the current. These results provide insight into the origin of current-induced resistance changes in metal layers and a guide to minimize nonmagnetic artifacts in switching experiments of antiferromagnets.
The effect of nonmagnetic metal additives in metallic antiferromagnets (AFMs) on the exchange bias (EB) has been investigated from a structural, magnetic and Monte Carlo simulation point of view in bilayers of CoFe/IrMn:Cu. Dilution by Cu atoms throughout the volume of the AFM IrMn give rise to an enhanced EB field for temperatures between 5 K and 300 K. The thermoremanent magnetization of the AFM-only is also enhanced with dilution, shows qualitatively the same temperature dependence as EB field and is at the origin of the EB mechanism. Monte Carlo simulations based on a Heisenberg model and …
Emergent Noncoplanar Spin Chirality through Magnetic and Nonmagnetic Substitution in the Kagome Antiferromagnet Mn$_3$Sn
S. N. Bose National Centre for Basic Sciences（S.N. 玻色基础科学国家中心）；Ben-Gurion University of the Negev（内盖夫本-古里安大学）；Indian Institute of Science Education and Research Bhopal（印度科学教育与研究学院博帕尔分校）；Indian Institute of Technology Tirupati（印度理工学院提鲁帕蒂分校）
Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have demonstrated giant resistive switching signals in single-layer antiferromagnetic films together with analog switching and relaxation characteristics relevant for neuromorphic computing. Here we report simultaneous electrical pulsing and scanning NV magnetometry of antiferromagnetic domains in CuMnAs performed using a pump-probe scheme. We observe a nano-scale frag…
In this work we focus on magnetic relaxation in Mn$_{80}$Ir$_{20}$(12 nm)/ Cu(6 nm)/ Py($d_\mathrm{F}$) antiferromagnet/Cu/ferromagnet (AFM/Cu/FM) multilayers with different thickness of the ferromagnetic permalloy layer. An effective FM-AFM interaction mediated via the conduction electrons in the nonmagnetic Cu spacer -- the spin-pumping effect -- is detected as an increase in the linewidth of the ferromagnetic resonance (FMR) spectra and a shift of the resonant magnetic field. We further find experimentally that the spin-pumping-induced contribution to the linewidth is inversely proportional…
Prediction of a layer nonlinear Hall effect in bilayer nonmagnetic or antiferromagnetic systems
School of Science, Hunan Institute of Technology（湖南工学院理学院）；Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University（教育部低维材料与应用技术重点实验室、湘潭大学材料科学与工程学院）；Hunan Provincial Key laboratory of Thin Film Materials and Devices, School of Materials Science and Engineering, Xiangtan University（湖南省薄膜材料与器件重点实验室、湘潭大学材料科学与工程学院）
Current flowing is studied in magnetic junctions consisting of a ferromagnetic metal (FM), antiferromagnetic conductor (AFM) and a nonmagnetic metal closing the electric circuit. The FM layer with high anisotropy and pinned spins of the magnetic atoms in the lattice acts as a spin injector relative to the AFM layer. To obtain resulting magnetization in the AFM layer, magnetic field is applied, which may be varied to control the magnetization. The spin-polarized current from the FM layer creates a torque and makes it possible to switch the magnetization. A possibility is shown to lower the thre…
Nonmagnetic impurity effects of the spin disordered state in the triangular antiferromagnet NiGa$_2$S$_4$ was studied through magnetic and thermal measurements for Ni$_{1-x}$Zn$_x$Ga$_2$S$_4$ (0.0\le x\le 0.3). Only 1 % substitution is enough to strongly suppress the coherence observed in the spin disordered state. However, the suppression is not complete and the robust feature of the T^2 dependent specific heat and its scaling behavior with the Weiss temperature indicate the existence of a coherent Nambu-Goldstone mode. Absence of either conventional magnetic order or bulk spin freezing sugge…
We unravel the origin of current-induced magnetic switching of insulating antiferromagnet/heavy metal systems. We utilize concurrent transport and magneto-optical measurements to image the switching of antiferromagnetic domains in specially engineered devices of NiO/Pt bilayers. Different electrical pulsing and device geometries reveal different final states of the switching with respect to the current direction. We can explain these through simulations of the temperature induced strain and we identify the thermomagnetoelastic switching mechanism combined with thermal excitations as the origin…
The recent discovery of superconductivity in BaFe$_2$S$_3$ [Takahashi {\it et al.}, Nat. Mater. {\bf 14}, 1008 (2015)] has stimulated considerable interest in 123-type iron chalcogenides. This material is the first reported iron-based two-leg ladder superconductor, as opposed to the prevailing two-dimensional layered structures of the iron superconductors family. Once the hydrostatic pressure exceeds $11$ GPa, BaFe$_2$S$_3$ changes from a semiconductor to a superconductor below $24$~K. Although previous calculations correctly explained its ground state magnetic state and electronic structure, …
Metallic superlattices where the magnetization vectors in the adjacent ferromagnetic layers are antiferromagnetically coupled by the interlayer exchange coupling through nonmagnetic spacer layers are systems available for the systematic study on antiferromagnetic (AF) spintronics. As a candidate of nonmagnetic spacer layer material exhibiting remarkable spin Hall effect, which is essential to achieve spin-orbit torque switching, we selected the Ir-doped Cu in this study. The AF-coupling for the Co / Cu$_{95}$Ir$_{5}$ / Co was investigated, and was compared with those for the Co / Cu / Co and C…
Ferromagnetic (FM) layers separated by nonmagnetic metallic spacer layers can exhibit Ruderman Kittel Kasuya Yosida (RKKY) coupling which may lead to a stable synthetic antiferromagnetic (SAF) phase. In this article we study magnetization reversal in [Co/Pt] layers by varying the number of bilayer stacks (Pt/Co) as well as thickness of Ir space layer tIr on rigid Si(100) and flexible polyimide substrates. The samples with tIr = 1.0 nm shows a FM coupling whereas samples with tIr = 1.5 nm shows an AFM coupling between the FM layers. At tIr = 2.0 nm, it shows a bow-tie shaped hysteresis loop ind…
The interplay between electronic transport and antiferromagnetic order has attracted a surge of interest as recent studies have shown that a moderate change in the spin orientation of a collinear antiferromagnet may have a significant effect on the electronic band structure. Among numerous electrical probes to read out such magnetic order, unidirectional magnetoresistance (UMR), where the resistance changes under the reversal of the current direction, can provide rich insights into the transport properties of spin-orbit coupled systems. However, UMR has never been observed in antiferromagnets …
The paper presents a computational study of the ground-state magnetic phases of a selected bilayer graphene nanoflake in external electric field and magnetic field. The electric field has parallel and perpendicular component while the magnetic field is oriented in plane. The system consists of two rectangular layers having armchair edges and zigzag terminations with Bernal stacking. The theoretical model is based on a tight binding Hamiltonian with Hubbard term. The magnetic phase diagram involving the total spin is constructed, showing the stability areas of phases with total spin values equa…
The interaction between surface acoustic waves (SAWs) and spin waves (SWs) in a piezoelectric/magnetic thin film heterostructure yields potential for the realization of novel microwave devices and applications in magnonics. In the present work, we investigate the SAW-SW interaction in a Pt/Co(2 nm)/Ru(0.85 nm)/Co(4 nm)/Pt synthetic antiferromagnet (SAF) composed of two ferromagnetic layers with different thicknesses separated by a thin nonmagnetic Ru spacer layer. Because of the combined presence of interfacial Dzyaloshinskii--Moriya interaction (iDMI) and interlayer dipolar coupling fields, t…
