We report on the direct measurement of the electron spin splitting and the accompanying nuclear Overhauser (OH) field, and thus the underlying nuclear spin polarization (NSP) and fluctuation bandwidth, in a single InAs quantum dot under resonant excitation conditions with unprecedented spectral resolution. The electron spin splitting is measured directly via resonant spin-flip single photon Raman scattering detected by superconducting nanowires to generate excitation-emission energy maps. The observed two-dimensional maps reveal an OH field that has a non-linear dependence on excitation frequency. This study provides new insight into earlier reports of so-called avoidance and tracking, showing two distinct NSP responses directly by the addition of a emission energy axis. The data show that the polarization processes depend on which electron spin state is optically driven, with surprising differences in the polarization fluctuations for each case: in one case, a stabilized field characterized by a single-peaked distribution shifts monotonically with the laser excitation frequency resulting in a nearly constant optical interaction strength across a wide detuning range, while in the other case the previously reported avoidance behavior is actually the result of a nonlinear dependence on the laser excitation frequency near zero detuning leading to switching between two distinct mesoscopic nuclear spin states. The magnitude of the field, which is as large as 400 mT, is measured with sub-100 nuclear spin sensitivity. Stable/unstable points of the OH field distribution are observed, resulting from the non-linear feedback loop in the electron-trion-nuclear system. Nuclear spin polarization state switching occurs between fields differing by 160 mT at least as fast as 25 ms. Control experiments indicate that the strain-induced quadrupolar interaction may explain the measured OH fields.
We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires. Furthermore, we propose that the interfacial strain between zincblende and wurtzite phases along the length of the wires manifests in the temperature-evolution of the phonon linewidths. From these studies, temperature-dependent Raman measurements emerge has a non-invasive method to study polytypism in such nanowires.
An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying incident wavelengths, originating from the enhanced internal electric field in an infinite dielectric cylinder. Our analysis demonstrates the combined effect of the first higher lying direct band gap energy (E1) and the refractive index of the InAs nanowires in the internal field induced resonant Raman scattering. Furthermore, the difference in the …
The thermal gradient along indium-arsenide nanowires was engineered by a combination of fabricated micro- trenches in the supporting substrate and focused laser irradiation. This allowed local control of thermally activated oxidation reactions of the nanowire on the scale of the diffraction limit. The locality of the oxidation was detected by micro-Raman mapping, and the results were found consistent with numerical simulations of the temperature profile. Applying the technique to nanowires in electrical devices the locally oxidized nanowires remained conducting with a lower conductance as expe…
We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence exper…
The pressure dependent phonon modes of predominant wurtzite InAs nanowires has been investigated in a diamond anvil cell under hydrostatic pressure up to 58 GPa. The TO and LO at Gamma point and other optical phonon frequencies increase linearly while the LO TO splitting decreases with pressure. The recorded Raman modes have been used to determine the mode Gruneisen parameters and also the value of Borns transverse effective charge. The calculated Borns transverse effective charge exhibits a linear reduction with increasing pressure implying an increase in covalency of nanowires under compress…
Molecular beam epitaxy is employed to manufacture self-assembled InAs/GaAs quantum dot Schottky resonant tunneling diodes. By virtue of a thin AlAs insertion barrier, the thermal current is effectively reduced and electron resonant tunneling through quantum dots under both forward and reverse biased conditions is observed at relatively high temperature of 77K. The ground states of quantum dots are found to be at ~0.19eV below the conduction band of GaAs matrix. The theoretical computations are in conformity with experimental data.
Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. Resonant tunneling current is superimposed on the thermal current, and they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77K or 300K, and this is the first time that resonant tunneling is observed at room temperature in III-V quantum-dot materials. Hysteresis loops in the curves are attributed to hot electron injection/emissi…
Tunneling spectroscopy of InAs nanocrystals deposited on graphite was measured using scanning tunneling microscopy, in a double-barrier tunnel-junction configuration. The effect of the junction symmetry on the tunneling spectra is studied experimentally and modeled theoretically. When the tip is retracted, we observe resonant tunneling through the nanocrystal states without charging. This is in contrast to previous measurements on similar nanocrystals anchored to gold by linker molecules, where charging took place. Charging is regained upon reducing the tip-nanocrystal distance, making the jun…
We report on coherent emission of the neutral exciton state in a single semiconductor self-assembled InAs/GaAs quantum dot embedded in a one-dimensional waveguide, under resonant picosecond pulsed excita- tion. Direct measurements of the radiative lifetime and coherence time are performed as a function of excitation power and temperature. The characteristic damping of Rabi oscillations which is observed, is attributed to an excitation-induced dephasing due to a resonant coupling between the emitter and the acoustic phonon bath of the matrix. Other sources responsible for the decrease of the co…
We investigate the charging dynamics in epitaxially grown InAs quantum dots under resonant excitation with and without additional low-power above-band excitation. Time-resolved resonance fluorescence from a charged exciton (trion) transition is recorded as the above-band excitation is modulated on and off. The fluorescence intensity varies as the QD changes from charged to neutral and back due to the influence of the above-band excitation. We fit the transients of the time-resolved resonance fluorescence with models that represent the charging and neutralization processes. The time dependence …
We have determined the Landé factor g* in self-organized InAs quantum dots using resonant-tunnelling experiments. With the magnetic field applied parallel to the growth direction z we find g*_\parallel = 0.75 for the specific dot investigated. When the magnetic field is tilted away by theta from the growth axis, g* gradually increases up to a value g*_\perp = 0.92 when B \perp z. Its angular dependence is found to follow the phenomenological behaviour g* (theta) = \sqrt{(g*_\parallel cos(theta)^2 + (g*_\perp sin(theta)^2}.
The dynamic response of InAs/GaAs self-assembled quantum dots (QDs) to strain is studied experimentally by periodically modulating the QDs with a surface acoustic wave and measuring the QD fluorescence with photoluminescence and resonant spectroscopy. When the acoustic frequency is larger than the QD linewidth, we resolve phonon sidebands in the QD fluorescence spectrum. Using a resonant pump laser, we have demonstrated optical frequency conversion via the dynamically modulated QD, which is the physical mechanism underlying laser sideband cooling a nanomechanical resonator by means of an embed…
In this article, we address the optomechanical effects in surface-enhanced resonant Raman scattering (SERRS) from a single molecule in a nano-particle on mirror (NPoM) nanocavity by developing a quantum master equation theory, which combines macroscopic quantum electrodynamics and electron-vibration interaction within the framework of open quantum system theory. We supplement the theory with electromagnetic simulations and time-dependent density functional theory calculations in order to study the SERRS of a methylene blue molecule in a realistic NPoM nanocavity. The simulations allow us not o…
We study the interplay between coherent light-matter interactions and non-resonant pulse propagation effects when ultra-short pulses propagate in room-temperature quantum-dot (QD) semiconductor optical amplifiers (SOAs). The signatures observed on a pulse envelope after propagating in a transparent SOA, when coherent Rabi-oscillations are absent, highlight the contribution of two-photon absorption (TPA), and its accompanying Kerr-like effect, as well as of linear dispersion, to the modification of the pulse complex electric field profile. These effects are incorporated into our previously deve…
We have recently reported the successful fabrication of bright single-photon sources based on Ag-embedded nanocone structures that incorporate InAs quantum dots. The source had a photon collection efficiency as high as 24.6%. Here we show the results of various types of photonic characterizations of the Ag-embedded nanocone structures that confirm their versatility as regards a broad range of quantum optical applications. We measure the first-order autocorrelation function to evaluate the coherence time of emitted photons, and the second-order correlation function, which reveals the strong sup…
We consider theoretically light scattering by a resonant layer that periodically moves in real space. At small frequencies of motion the scattered light spectrum reveals the frequency shift that is governed by the Doppler effect. At higher motion frequencies, the scattered light spectra acquire sidebands stemming from the Raman effect. We investigate the crossover between these two regimes and propose a realistic quantum well structure for its observation.
Exciton spin and related optical polarization in self-assembled InAs/In$_{0.53}$Ga$_{0.23}$Al$_{0.24}$As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pumping conditions on spin polarization and spin memory of the quantum dash ground state. We show that a spin pumping scheme, utilizing the longitudinal-optical-phonon-mediated coherent scattering process, c…
We present a theory of the optical control of the spin of an electron in an InAs quantum dot. We show how two Raman-detuned laser pulses can be used to obtain arbitrary single-qubit rotations via the excitation of an intermediate trion state. Our theory takes into account a finite in-plane hole $g$-factor and hole-mixing. We show that such rotations can be performed to high fidelities with pulses lasting a few tens of picoseconds.
We report on the resonant optical pumping of the |\pm1> spin states of a single Mn dopant in an InAs/GaAs quantum dot embedded itself in a charge tuneable device. The experiment relies on a "W" scheme of transitions reached when a suitable longitudinal magnetic field is applied. The optical pumping is achieved via the resonant excitation of the central Λ system at the neutral exciton X0 energy. For a specific gate voltage, the red-shifted photoluminescence of the charged exciton X- is observed, which allows non-destructive readout of the spin polarization. An arbitrary spin preparation in the …
Photon correlation measurements reveal memory effects in the optical emission of single InAs quantum dots with timescales from 10 to 800 ns. With above-band optical excitation, a long-timescale negative correlation (antibunching) is observed, while with quasi-resonant excitation, a positive correlation (blinking) is observed. A simple model based on long-lived charged states is presented that approximately explains the observed behavior, providing insight into the excitation process. Such memory effects can limit the internal efficiency of light emitters based on single quantum dots, and could…
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic fields. We extract the physical properties of the electron and hole wavefunctions, including the confinement energies, interaction energies, wavefunction lengths, and $g$-factors. For excitons, we measure the permanent dipole moment, polarizability, diamagnetic coefficient, and Zeeman splitting. The carriers are determined to be in the strong confinement reg…
Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a strong fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband $p \pm i p$ pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to ma…
The spin states of electrons and holes confined in InAs quantum dot molecules have recently come to fore as a promising system for the storage or manipulation of quantum information. We describe here a feasible scheme for complete quantum optical control of two electron spin qubits in two vertically-stacked singly-charged InAs quantum dots coupled by coherent electron tunneling. With an applied magnetic field transverse to the growth direction, we construct a universal set of gates that corresponds to the possible Raman transitions between the spin states. We detail the procedure to decompose …
We report on resonant optical spectroscopy of self-assembled InGaAs quantum dots in which the number of electrons can accurately be tuned to N=0,1,2 by an external gate voltage. Polarization, wave vector and magnetic field dependent measurements enable us to clearly distinguish between resonant Raman and resonant photoluminescence processes. The Raman spectra for N=1 and 2 electrons considerably differ from each other. In particular, for N=2, the quantum-dot He, the spectra exhibit both singlet and triplet transitions reflecting the elementary many-particle interaction. Also the resonant photo…
We report stimulated Raman spectroscopy of the G phonon in both single and multi-layer graphene, through Coherent anti-Stokes Raman Scattering (CARS). The signal generated by the third order nonlinearity is dominated by a vibrationally non-resonant background (NVRB), which obscures the Raman lineshape. We demonstrate that the vibrationally resonant CARS peak can be measured by reducing the temporal overlap of the laser excitation pulses, suppressing the NVRB. We model the observed spectra, taking into account the electronically resonant nature of both CARS and NVRB. We show that CARS can be us…
From our theoretical studies of resonant Raman transitions in two-electron quantum dots (artificial helium atoms) we show that in this system, the singlet-triplet Raman transitions are allowed (in polarized configuration) only in the presence of spin-orbit interactions. With an increase of the applied magnetic field this transition dominates over the singlet-singlet and triplet-triplet transitions. This intriguing effect can therefore be utilized to tune Raman transitions as well as the spin-orbit coupling in few-electron quantum dots.
The line shape of the double-resonant $2D$ Raman mode in bilayer graphene is often considered to be characteristic for a certain laser excitation energy. Here, in a joint experimental and theoretical study, we analyze the dependence of the double-resonant Raman scattering processes in bilayer graphene on the electronic broadening parameter $γ$. We demonstrate that the ratio between symmetric and anti-symmetric scattering processes sensitively depends on the lifetime of the electronic states, explaining the experimentally observed variation of the complex $2D$-mode line shape.
Resonant inelastic (Raman) light scattering off neutral GaAs quantum dots which contain a mean number, N=42, of electron-hole pairs is computed. We find Raman amplitudes corresponding to strongly collective final states (charge-density excitations) of similar magnitude as the amplitudes related to weakly collective or single-particle excitations. As a function of the incident laser frequency or the magnetic field, they are rapidly varying amplitudes. It is argued that strong Raman peaks should come out in the spin-density channels, not related to valence-band mixing effects in the intermediate…
Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a GaAs-AlAs-GaAs tunneling device are investigated experimentally in magnetic fields up to 28 T. The steps evolve into strongly enhanced current peaks in high fields. This can be understood as a field-induced Fermi-edge singularity due to the Coulomb interaction between the tunneling electron on the quantum dot and the partly spin polarized Fermi sea in the Landau quantized three-dimensional emitter.
We develop a general, fully quantum mechanical theory of Raman scattering from first principles in terms of many-body correlation functions. In order to arrive at expressions that are practically useful in the context of condensed matter physics, we adopt the Lehmann-Symanzik-Zimmermann reduction formula from high-energy physics and formulate in the modern language of many-body perturbation theory. This enables us to derive a general and practically useful expression for the Raman scattering rate in terms of quantities that can be computed \textit{ab initio}. Our work paves the way toward a co…
We have observed that the shot noise of tunnel current, I, in GaSb-AlSb-InAs-AlSb-GaSb double-barrier structure under a magnetic field can exceed 2qI. The measurements were done at T=4K in fields up to 5T parallel to the current. The noise enhancement occurred at each of the several negative-differential conductance regions induced by the tunneling of holes through Landau levels in the InAs quantum well. The amount of the enhancement increased with the strength of the negative conductance and reached values up to 8qI. These results are explained qualitatively by fluctuations of the density of …
We show that the low-energy peak in the polarized resonant Raman spectra of quantum wires, which is commonly associated with ``single particle excitations'', can be interpreted as signature of intra-band collective spin excitations. A broad maximum in the resonant depolarized spectra is predicted to exist above the frequency of the spin density excitation, due to simultaneous but independent propagation of spin- and charge-density modes.
Resonant Raman spectra of single layer WS$_{2}$ flakes are presented. A second order Raman peak (2LA) appears under resonant excitation with a separation from the E$^{1}_{2g}$ mode of only $4$cm$^{-1}$. Depending on the intensity ratio and the respective line widths of these two peaks, any analysis which neglects the presence of the 2LA mode can lead to an inaccurate estimation of the position of the E$^{1}_{2g}$ mode, leading to a potentially incorrect assignment for the number of layers. Our results show that the intensity of the 2LA mode strongly depends on the angle between the linear pola…
The resonant Raman scattering of a quantum wire in a strong magnetic field is studied, focused on the effect of long range Coulomb interaction and the spin-charge separation. The energy-momentum dispersions of charge and spin excitation obtained from Raman cross-section show the characteristc cross-over behaviour induced by inter-edge Coulomb interaction. The "SPE" peak near resonance in polarized spectra becomes broad due to the momentum dependence of charge velocity. The broad peak in the depolarized spectra is shown to originate from the disparity between charge and spin excitation velocity…
We report the graded electronic band gap along the axis of individual heterostructured WZ-ZB InAs/InSb0.12As0.88 nanowires. Resonance Raman imaging has been exploited to map the axial variation in the second excitation gap energy (E1) at the high symmetry point (L point) of the Brillouin zone. We relate the origin of the observed evolution of the gap energy to the fine tuning of the alloy composition from the tip towards the interface of the nanowire. The electronic band structures of InAs, InSb and InSbxAs1-x alloy systems at x=0.125, 0.25, 0.50, 0.75 and 0.875, using all electron density fun…
The appearance of a broad peak at $\sim$1550 cm$^{-1}$ (G$^{-}$ peak) in carbon nanotube resonant Raman scattering spectra has been conventionally attributed to the presence of metallic nanotubes. Here, we present resonant Raman measurements on macroscopic nanotube ensembles enriched in armchair species prepared through density gradient ultracentrifugation. Our data clearly demonstrate that the broad G$^{-}$ mode is absent for armchair structures and appears only when the excitation laser is resonant with non-armchair "metals." Due to the large number ($\sim$10$^{10}$) of nanotubes across seve…
We present a combined experimental and theoretical study of resonant Raman spectroscopy in single- and triple-layer MoTe$_2$. Raman intensities are computed entirely from first principles by calculating finite differences of the dielectric susceptibility. In our analysis, we investigate the role of quantum interference effects and the electron-phonon coupling. With this method, we explain the experimentally observed intensity inversion of the $A^\prime_1$ vibrational modes in triple-layer MoTe2 with increasing laser photon energy. Finally, we show that a quantitative comparison with experiment…
Tip enhanced Raman scattering (TERS) amplifies the intensity of vibrational Raman scattering by employing the tip of a probe interacting, in ultra close proximity, with a surface. Although a general understanding of the TERS process is still to be fully elucidated, scanning tunneling microscopy (STM) feedback is often applied with success in TERS to keep a noble metal probe in intimate proximity with a noble metal substrate. Since such STM TERS is a common modality, the possible implications of plasmonic fields that may be induced by the tunneling process are investigated and reported. In addi…
The weakly screened electron-hole interactions in an atomically thin semiconductor not only downshift its excitation spectrum from a quasiparticle one, but also redistribute excitation energies and wavefunction characters with profound effects on diverse modes of material response, including the exciton-phonon scattering processes accessible to resonant Raman measurements. Here we develop a first-principles framework to calculate frequency-dependent resonant Raman intensities that includes excitonic effects and goes beyond the Placzek approximation. We show how excitonic effects in MoS2 strong…
We study single-qubit gates performed via stimulated Raman adiabatic passage (STIRAP) on a spin qubit implemented in a quantum dot system in the presence of phonons. We analyze the interplay of various kinds of errors resulting from the carrier-phonon interaction as well as from quantum jumps related to nonadiabaticity and calculate the fidelity as a function of the pulse parameters. We give quantitative estimates for an InAs/GaAs system and identify the parameter values for which the error is considerably minimized, even to values below $10^{-4}$ per operation.
The experimental Raman spectra of graphene exhibit a few intense two-phonon bands, which are enhanced through double-resonant scattering processes. Though there are many theoretical papers on this topic, none of them predicts the spectra within a single model. Here, we present results for the two-phonon Raman spectra of graphene calculated by means of the quantum perturbation theory. The electron and phonon dispersions, electronic lifetime, electron-photon and electron-phonon matrix elements, are all obtained within a density-functional-theory-based non-orthogonal tight-binding model. We study…
The temperature evolution of the resonant Raman scattering from high-quality bilayer 2H-MoS$_{2}$ encapsulated in hexagonal BN flakes is presented. The observed resonant Raman scattering spectrum as initiated by the laser energy of 1.96 eV, close to the A excitonic resonance, shows rich and distinct vibrational features that are otherwise not observed in non-resonant scattering. The appearance of 1$^{st}$ and 2$^{nd}$ order phonon modes is unambiguously observed in a broad range of temperatures from 5 K to 320 K. The spectrum includes the Raman-active modes, $i.e.$ E$_\textrm{1g}^{2}$($Γ$) and…
With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here we investigate single-electron tunneling in hard-wall InAs/InP nanowires in the presence of an off-resonant microwave drive. Our heterostructured nanowires include InAs quantum dots (QDs) and exhibit different tunnel-current regimes. In particular, for source-drain bias up to few mV Coulomb diamonds spread with increasing contrast as a function of microwave …
A new generalised group-theoretical approach, based on master Maxwell-pseudospin equations, is proposed to explain recently observed enhanced circular dichroism in the excited state emission from p-doped quantum dot ensembles under resonant circularly polarised excitation into hot trion states, herein referred to as "spin-filtering effect". The theory agrees remarkably well with polarised time-resolved photoluminescence experiments, yielding largely unknown inter- and intra-shell spin relaxation time scales. This approach allows to predict optimum pulse parameters for control of spin dynamics,…
Raman and photoluminescence (PL) measurements were performed on suspended and supported MoS2 up to 6 trilayers (TLs). The difference in the dielectric environment of suspended and supported MoS2 does not lead to large differences in the PL or Raman spectra. Most of the apparent difference in the PL intensity can be explained by the interference effect except for 1TL MoS2. The positions of the Raman peaks are not much different between suspended and supported MoS2. The relative intensities, on the other hand, show some differences between suspended and supported samples. In particular, the inte…
In this report, we study electromechanical properties of a suspended InAs nanowire (NW) resonator. At low temperatures, the NW acts as the island of a single electron transistor (SET) and we observe a strong coupling between electrons and mechanical modes at resonance; the rate of electron tunneling is approximately 10 times the resonant frequency. Above and below the mechanical resonance, the magnitude of Coulomb peaks is different and we observe Fano resonance in conductance due to the interference between two contributions to potential of the SET. The quality factor ($Q$) of these devices i…
The bosonisation technique is used to calculate the resonant Raman spectrum of a quantum wire with two electronic sub-bands occupied. Close to resonance, the cross section at frequencies in the region of the inter sub-band transitions shows distinct peaks in parallel polarisation of the incident and scattered light that are signature of collective higher order spin density excitations. This is in striking contrast to the conventional selection rule for non-resonant Raman scattering according to which spin modes can appear only in perpendicular polarisation. We predict a new selection rule for …
An analytical study is presented of the double resonant Raman scattering process in graphene, responsible for the D and D$^{\prime}$ features in the Raman spectra. This work yields analytical expressions for the D and D$^{\prime}$ integrated Raman intensities that explicitly show the dependencies on laser energy, defect concentration, and electronic lifetime. Good agreement is obtained between the analytical results and experimental measurements on samples with increasing defect concentrations and at various laser excitation energies. The use of Raman spectroscopy to identify the nature of def…
We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.
By computing the double-resonant Raman scattering cross-section completely from first principles and including electron-electron interaction at the $GW$ level, we unravel the dominant contributions for the double-resonant 2D-mode in bilayer graphene. We show that, in contrast to previous works, the so-called inner processes are dominant and that the 2D-mode lineshape is described by three dominant resonances around the $K$ point. We show that the splitting of the TO phonon branch in $Γ-K$ direction, as large as 12 cm$^{-1}$ in $GW$ approximation, is of great importance for a thorough descripti…
A theoretical model of resonant hyper-Raman scattering by an ensemble of spherical semiconductor quantum dots has been developed. The electronic intermediate states are described as Wannier-Mott excitons in the framework of the envelope function approximation. The optical polar vibrational modes of the nanocrystallites (vibrons) and their interaction with the electronic system are analized with the help of a continuum model satisfying both the mechanical and electrostatic matching conditions at the interface. An explicit expression for the hyper-Raman scattering efficiency is derived, which is…
The polarization dependence of the double resonant Raman scattering (2D) band in bilayer graphene (BLG) is studied as a function of the excitation laser energy. It has been known that the complex shape of the 2D band of BLG can be decomposed into four Lorentzian peaks with different Raman frequency shifts attributable to four individual scattering paths in the energy-momentum space. From our polarization dependence study, however, we reveal that each of the four different peaks is actually doubly degenerate in its scattering channels, i.e., two different scattering paths with similar Raman fre…
The electronic states at the direct band gap of monolayer WSe2 at the $K^+$ and $K^-$ valleys are related by time reversal and may be viewed as pseudo-spins. The corresponding optical interband transitions are governed by robust excitons. In double resonant Raman spectroscopy, we uncover that the 2s exciton state energy differs from the 1s state energy by exactly the energy of the combination of several prominent phonons. Superimposed on the exciton photoluminescence (PL) we observe the double resonant Raman signal. This spectrally narrow peak shifts with the excitation laser energy as incomin…
