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arXiv 2011.10060cond-mat.mes-hall
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Quantum-limit Hall effect with large carrier density in topological semimetals

Guang Yang, Yi Zhang

英文摘要:

The quantum-limit Hall effect at $ν= nh/eB\sim O(1)$ that hosts a variety of exotic quantum phenomena requires demanding strong magnetic field $B$ and low carrier density $n$. We propose to realize quantum-limit Hall effect even in the presence of large carrier density residues $n_e$ and $n_h$ relative to the magnetic field $B$ in topological semimetals, where a single Fermi surface contour allow both electron-type and hole-type carriers and approaches charge neutrality as $n_e\sim n_h$. The underlying filling factor $ν= |n_e-n_h|h/eB$ explicitly violates the Onsager's relation for quantum oscillations.

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