In this paper we derive a formalism allowing us to separate inter-layer contributions to the polarizability of a periodic array of 2D materials from intra-layer ones. To this aim, effective profile functions are introduced. They constitute a tight-binding-like layer-localized basis involving two lengths, the effective thickness $d$ characteristic of the 2D material and the inter-layer separation $L$. The method permits, within the same formalism, either to compute the single-layer dielectric function from an ab-initio periodic calculation (top-down strategy) or to stack several 2D materials to generate a finite-thickness van der Waals heterostructure (bottom-up strategy).
We present an effective atomic interaction potential for crystalline alpha-Al2O3 generated by the program potfit. The Wolf direct, pairwise summation method with spherical truncation is used for electrostatic interactions. The polarizability of oxygen atoms is included by use of the Tangney-Scandolo interatomic force field approach. The potential is optimized to reproduce the forces, energies and stresses in relaxed and strained configurations as well as {0001}, {10-10} and {11-20} surfaces of Al2O3. Details of the force field generation are given, and its validation is demonstrated. We apply …
We extend the program potfit, which generates effective atomic interaction potentials from ab initio data, to electrostatic interactions and induced dipoles. The potential parametrization algorithm uses the Wolf direct, pairwise summation method with spherical truncation. The polarizability of oxygen atoms is modeled with the Tangney-Scandolo interatomic force field approach. Due to the Wolf summation, the computational effort in simulation scales linearly in the number of particles, despite the presence of electrostatic interactions. Thus, this model allows to perform large-scale molecular dy…
In this paper we present the parameterization of a new interionic potential for stoichiometric, reduced and doped CeO$_2$. We use a dipole-polarizable potential (DIPPIM) and optimize its parameters by fitting them to a series of DFT calculations. The resulting potential was tested by calculating a series of fundamental properties for CeO$_2$ and by comparing them to experimental values. The agreement for all the calculated properties (thermal and chemical expansion coefficients, lattice parameters, oxygen migration energies, local crystalline structure and elastic constants) is within 10-15% o…
We theoretically investigate high harmonic generation (HHG) from silicon thin films with thicknesses from a few atomic layers to a few hundreds of nanometers, to determine the most efficient thickness for producing intense HHG in the reflected and transmitted pulses. For this purpose, we employ a few theoretical and computational methods. The most sophisticated method is the ab initio time-dependent density functional theory coupled with the Maxwell equations in a common spatial resolution. This enables us to explore such effects as the surface electronic structure and light propagation, as we…
The ab initio full-potential linearized augmented plane-wave method explicitly designed for the slab geometry was employed to elucidate the physical origin of the layer potentials for the trilayers nFe/3Cr/nFe(001), where n is the number of Fe monolayers. The thickness of the transition-metal ferromagnet has been ranged from $n=1$ up to n=8 while the spacer thickness was fixed to 3 monolayers. The calculated potentials were inserted in the Fuchs-Sondheimer formalism in order to calculate the giant magnetoresistance (GMR) ratio. The predicted GMR ratio was compared with the experiment and the o…
A theoretical study of the surface energy-loss function of freestanding Pb(111) thin films is presented, starting from the single monolayer case. The calculations are carried applying the linear response theory, with inclusion of the electron band structure by means of a first-principles pseudopotential approach using a supercell scheme. Quantum-size effects on the plasmon modes of the thinnest films are found in qualitative agreement with previous work based on the jellium model. For thicker films, results show a dispersionless mode at all thicknesses, in agreeement with electron energy-loss …
We explore possibilities for control of magnons in two-dimensional heterostructures by an external electric field acting across a dielectric barrier. By performing ab-initio calculations for a Fe monolayer and a Fe bilayer, both suspended in vacuum and deposited on Cu(001), we demonstrate that external electric field can significantly modify magnon lifetimes and that these changes can be related to field-induced changes in the layer-resolved Bloch spectral functions. For systems with more magnon dispersion branches, the gap between high- and low-energy eigenmodes varies with the external field…
The magnetization distribution, its energetic characterization by the interlayer coupling constants and lattice dynamics of (001)-oriented Fe/Pt multilayers are investigated using density functional theory combined with the direct method to determine phonon frequencies. It is found that ferromagnetic order between consecutive Fe layers is favoured, with the enhanced magnetic moments at the interface. The bilinear and biquadratic coupling coefficients between Fe layers are shown to saturate fast with increasing thickness of nonmagnetic Pt layers which separate them. The phonon calculations demo…
We investigate the thermoelectric properties of Fe/MgO/Fe(001) magnetic tunnel junctions (MTJs) by means of the linear-response theory combined with a first-principles-based Landauer-Büttiker approach. We find that the Seebeck coefficient of Fe/MgO/Fe(001) MTJs strongly depends on the barrier thickness and the tetragonal distortion. A compressive tetragonal distortion of the in-plane lattice parameter in the MTJs provides interface resonant states just above the Fermi energy. This causes resonant tunneling in the MTJs and significantly enhances the Seebeck coefficient when the thickness of the…
We control the thickness of GaSe on the level of individual layers and study the corresponding optical absorption via highly sensitive differential transmission measurements. Suppression of excitonic transitions is observed when the number of layers is smaller than a critical value of 8. Through ab-initio modelling we are able to link this behavior to a fundamental change in the band structure that leads to the formation of a valence band shaped as an inverted Mexican hat in thin GaSe. The thickness-controlled modulation of the optical properties provides attractive resources for the developme…
We present a novel approach to spin manipulation in atomic-scale nanostructures. Our ab initio calculations clearly demonstrate that it is possible to tune magnetic properties of sub-nanometer structures by adjusting the geometry of the system. By the example of two surface-based systems we demonstrate that (i) the magnetic moment of a single adatom coupled to a buried magnetic Co layer can be stabilized in either a ferromagnetic or an antiferromagnetic configuration depending on the spacer thickness. It is found that a buried Co layer has a profound effect on the exchange interaction between …
Quasi-free standing graphene (QFG) obtained by the intercalation of a hydrogen layer between a SiC surface and the graphene is recognized as an excellent candidate for the development of graphene based technology. In addition, the recent proposal of a direct equivalence between the $p$-type doping typically found for these systems and the spontaneous polarization (SP) associated to the particular SiC polytype, opens the possibility of tuning the number of carriers in the Dirac cones without the need of external gate voltages. However, first principles calculations which could confirm at the at…
We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb_(0.5)As_(0.5). This alloy part of the heterostructures is a topological semimetal. The other component of each system is a semiconductor, zincblende-InSb, and wurtzite-InAs. Both heterostructures are semiconductors. Our theoretical analysis predicts that the variation in the thickness of the InSb layer in InSb/InSb_(0.5)As_(0.5) heterostructure renders altered band gaps with different characteristics (i.e. direct or indirect). The study holds promise for fabrica…
By means of systematic first-principles calculations based on density functional theory we search for suitable materials that can host antiferromagnetically coupled skyrmions. We concentrate on fcc-stacked (111)-oriented metallic $Z$/Co/Pt ($Z=4d$ series: Y$-$Pd, the noble metals: Cu, Ag, Au, post noble metals: Zn and Cd) magnetic multilayers of films of monatomic thickness. We present quantitative trends of magnetic properties: Magnetic moments, interlayer exchange coupling, spin-stiffness, Dzyaloshinskii-Moriya interaction, magnetic anisotropy, and the critical temperature. We show that some…
Raman spectroscopy is frequently used to identify composition, structure and layer thickness of 2D materials. Here, we describe an efficient first-principles workflow for calculating resonant first-order Raman spectra of solids within third-order perturbation theory employing a localized atomic orbital basis set. The method is used to obtain the Raman spectra of 733 different monolayers selected from the computational 2D materials database (C2DB). We benchmark the computational scheme against available experimental data for 15 known monolayers. Furthermore, we propose an automatic procedure fo…
Silicon together with its native oxide SiO$_2$ was recognized as an outstanding material system for the semiconductor industry in the 1950s. In state-of-the-art device technology, SiO$_2$ is widely used as an insulator in combination with high-$k$ dielectrics such as HfO$_2$, demanding fabrication of ultra-thin interfacial layers. The classical standard model derived by Deal and Grove accurately describes the oxidation of Si in a progressed stage, however, strongly underestimates growth rates for thin oxide layers. Recent studies report a variety of oxidation mechanisms during the growth of ox…
Atomic Layer Deposition (ALD) is a promising technique for producing Josephson junctions (JJs) with lower defect densities for qubit applications. A key problem with using ALD for JJs is the interfacial layer (IL) that develops underneath the tunnel barrier. An IL up to 2 nm forms between ALD Al2O3 and Al. However, the IL thickness is unknown for ALD films less 1 nm. In this work, Nb-Al-ALD-Al2O3-Nb trilayers with tunnel barriers from 0.6 - 1.6 nm were grown in situ. Nb-Al-AlOx-Nb JJs with thermally oxidized tunnel barrier were produced for reference. RN was obtained using a four-point method …
We performed atomic and electron dynamics analysis to study the impact of morphological and thickness changes of a MoS2 system on its tribological properties through a diamond tip. We had considered 4 cases: variable layers (1-4 layers) and number (2-8 indents), radius (12Å, 16Å, 20Å, 24Å), and pattern of indents (0°, 25°, 30°, 35°, 45°, 60°) resulting into 18 subcases. MD results showed changing the radius and number of indents were the most, and number of layers and indents' pattern were the least effective way to tune the frictional characteristics. Ground state ab-initio study demonstrated…
We calculate the tunneling magnetoresistance (TMR) of Fe|ZnSe|Fe|ZnSe|Fe (001) double magnetic tunnel junctions as a function of the in-between Fe layer's thickness, and compare these results with those of Fe|ZnSe|Fe simple junctions. The electronic band structures are modeled by a parametrized tight-binding Hamiltonian fitted to ab initio calculations, and the conductance is calculated within the Landauer formalism expressed in terms of Green's functions. We find that the conductances for each spin channel and the TMR strongly depend on the in-between Fe layer's thickness, and that in some ca…
In aluminium electrolysis cells, a ledge of frozen electrolyte is formed, attached to the sides of the cell. The control of the side ledge thickness is essential in ensuring a reasonable lifetime for the cells. Numerical modelling of the side ledge thickness requires an accurate knowledge of the thermal transport properties as a function of temperature. Unfortunately, there is a considerable lack of experimental data for the large majority of the phases constituting the side ledge. The aim of this work is to provide, for each phase possibly present in the side ledge, a formulation of the therm…
