We introduce the cavity-embedded Cooper pair transistor (cCPT), a device which behaves as a highly nonlinear microwave cavity whose resonant frequency can be tuned both by charging a gate capacitor and by threading flux through a SQUID loop. We characterize this device and find excellent agreement between theory and experiment. A key difficulty in this characterization is the presence of frequency fluctuations comparable in scale to the cavity linewidth, which deform our measured resonance circles in accordance with recent theoretical predictions [Brock et al., Phys. Rev. Applied 14, 054026 (2020)]. By measuring the power spectral density of these frequency fluctuations at carefully chosen points in parameter space, we find that they are primarily a result of the $1/f$ charge and flux noise common in solid state devices. Notably, we also observe key signatures of frequency fluctuations induced by quantum fluctuations in the cavity field via the Kerr nonlinearity.
A superconducting tunnel junction is used to directly extract quasiparticles from one of the leads of a single-Cooper-pair-transistor. The consequent reduction in quasiparticle density causes a lower rate of quasiparticle tunneling onto the device. This rate is directly measured by radio-frequency reflectometry. Local cooling may be of direct benefit in reducing the effect of quasiparticles on coherent superconducting nanostructures.
We have measured, in real time, individual quasiparticle tunneling in a single Cooper pair transistor, using rf reflectometry on the supercurrent branch. We have extracted the even-to-odd and odd-to-even transition rates directly by analyzing the distributions of dwell times in the even and odd states of the transistor. We discuss both the measurement and analysis techniques and report on the temperature and gate dependence of the quasiparticle tunneling rates.
We have developed a novel system consisting of a superconducting single-electron transistor (S-SET) coupled to a two-dimensional electron gas (2DEG), for which the dissipation can be tuned in the immediate vicinity of the S-SET. Within linear response, the S-SET conductance varies nonmonotonically with increasing 2DEG impedance. We find good agreement between our experimental results and a model incorporating electromagnetic fluctuations in both the S-SET leads and the 2DEG, as well as low-frequency switching of the S-SET offset charge.
We have fabricated single-Cooper-pair transistors in which the spatial profile of the superconducting gap energy was controlled by oxygen doping. The profile dramatically affects the switching current \textit{vs.} gate voltage curve of the transistor, changing its period from $1e$ to $2e$. A model based on nonequilibrium quasiparticles in the leads explains our results, including the surprising observation that even devices with a clean $2e$ period are ``poisoned'' by small numbers of these quasiparticles.
We study a superconducting single-charge transistor, where the coherence of Cooper pair tunneling is destroyed by the coupling to a tunable dissipative environment. Sequential tunneling and cotunneling processes are analyzed to construct the shape of the conductance peaks and their dependence on the dissipation and temperature. Unexpected features are found due to a cross-over between two distinct regimes, one `environment-assisted' the other `environment-dominated'. Several of the predictions have been confirmed by recent experiments. The model and results apply also to the dynamics of Joseph…
We present radio-frequency measurements on a single-Cooper-pair-transistor in which individual quasiparticle poisoning events were observed with microsecond temporal resolution. Thermal activation of the quasiparticle dynamics is investigated, and consequently, we are able to determine energetics of the poisoning and un-poisoning processes. In particular, we are able to assign an effective quasiparticle temperature to parameterize the poisoning rate.
Operating the cavity-embedded Cooper pair transistor (cCPT) in the Kerr bistable regime, we demonstrate single-shot resolution between two charge states that are $0.09e$ apart. The measurement is performed with 94$\%$ fidelity in a duration of 3 $μ$s. The drive power at which the measurement is performed corresponds to only 20 intracavity photons on average in the high oscillation amplitude state of the cCPT, which is orders-of-magnitude smaller than that in rf-SETs. We find that the limiting factor for this mode of operation of the cCPT is the spontaneous fluctuation-induced switching between…
We analyze how decoherence appears in the I-V characteristics of a voltage-biased single-Cooper-pair transistor. Especially the effect on resonant single or several Cooper-pair tunneling is studied. We consider both a symmetric and an asymmetric transistor. As a decoherence source we use a small resistive impedance (Re[Z(w)]<<R_Q=h/4e^2) in series with the transistor, which provides both thermal and quantum fluctuations of the voltage. Additional decoherence sources are quasiparticle tunneling across the Josephson junctions and quantum f-noise caused by spurious charge fluctuators nearby the i…
We use radio-frequency reflectometry to measure quasiparticle tunneling rates in the single-Cooper-pair-transistor. Devices with and without quasiparticle traps in proximity to the island are studied. A $10^2$ to $10^3$-fold reduction in the quasiparticle tunneling rate onto the island is observed in the case of quasiparticle traps. In the quasiparticle trap samples we also measure a commensurate decrease in quasiparticle tunneling rate off the island.
We have fabricated and measured superconducting single-electron transistors with Al leads and Nb islands. At bias voltages below the gap of Nb we observe clear signatures of resonant tunneling of Cooper pairs, and of Coulomb blockade of the subgap currents due to linewidth broadening of the energy levels in the superconducting density of states of Nb. The experimental results are in good agreement with numerical simulations.
We show that a single-Cooper-pair transistor (SCPT) electrometer emits narrow-band microwave radiation when biased in its sub-gap region. Photo activation of quasiparticle tunneling in a nearby SCPT is used to spectroscopically detect this radiation, in a configuration that closely mimics a qubit-electrometer integrated circuit. We identify emission lines due to Josephson radiation and radiative transport processes in the electrometer, and argue that a dissipative superconducting electrometer can severely disrupt the system it attempts to measure.
We report on the effect of the frequency-locked transfer of single Cooper pairs in a superconducting single-electron Al transistor embedded in a dissipative environment (on-chip Cr resistor of R = 40 kOhm). The transistor was dc voltage biased, and the harmonic signal of frequency f of several MHz was applied to the gate. Due to the substantial rate of relaxation, the unidirectional transfer of single pairs occurred in each junction once per clock cycle and the current plateaus at I = 2ef were developed in the transistor's I-V curves. The mechanisms (supercurrent, Landau-Zener tunneling, quasi…
We analyze tunneling of Cooper pairs across voltage biased asymmetric single-Cooper-pair transistors. Also tunneling of Cooper pairs across two capacitively coupled Cooper-pair boxes is considered, when the capacitive coupling and Cooper pair tunneling are provided by a small Josephson junction between the islands. The theoretical analysis is done at subgap voltages, where the current-voltage characteristics depend strongly on the macroscopic eigenstates of the island(s) and their coupling to the dissipative environment. As the environment we use an impedance which satisfies Re[Z]<<R_Q and a f…
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator…
Dissipation is ubiquitous in quantum systems, and its interplay with fluctuations is critical to maintaining quantum coherence. We experimentally investigate the dissipation dynamics in single-walled carbon nanotubes coupled to superconductors. The voltage-current characteristics display gate-tunable hysteresis, with sizes that perfectly correlate with the normal state resistance RN, indicating the junction undergoes a periodic modulation between underdamped and overdamped regimes. Surprisingly, when a device's Fermi-level is tuned through a local conductance minimum, we observe a gate-control…
Using an operator scattering approach, we analyze the quantum dynamics of an ultrasensitive electrometer -- a Cooper pair transistor embedded in a quarter-wave microwave cavity (cCPT). While the cCPT is inherently a tunable, strongly nonlinear system affording a diverse range of functionalities, we restrict our present analysis to a necessary first investigation of its linear charge sensing capabilities, limiting to low pump powers corresponding to an average cavity photon number $\lesssim 1$. Assuming realizable cCPT parameters (B. L. Brock et al., Phys. Rev. Applied, 044009), and not includi…
We have investigated the Josephson inductance $L_J$ of a Superconducting Cooper Pair Transistor (SCPT). We traced the inductance using microwave reflection measurements on a tuned resonance circuit in which a SCPT was mounted in parallel to a $ \sim 200$ pH strip line inductance. When the inverse of the Josephson inductance, determined on the charge-phase bias plane for a SCPT with a Josephson to Coulomb energy ratio of $E_J/E_C =1.75$, is integrated over the phase, we obtain a current-phase relation, which is strongly non-sinusoidal near the charge degeneracy point.
The Bloch-oscillating transistor (BOT) is an amplifier that utilizes semiclassical dynamics of states in energy bands under traveling quasimomentum. In a BOT, a single quasiparticle tunneling across a base tunnel junction switches the state of a superconducting tunnel junction to a lower Bloch band, triggering a series of resonant Cooper-pair tunnelings through an emitter Josephson junction (Bloch oscillations). Here, we investigate experimentally and theoretically an alternative realization of this device, based only on superconducting tunnel junctions. We discover new amplification schemes, …
Parity control of superconducting islands hosting Majorana zero modes (MZMs) is required to operate topological qubits made from proximitized semiconductor nanowires. We, therefore, study parity effects in hybrid InAs-Al single-Cooper-pair transistors (SCPTs) as a first step. In particular, we investigate the gate-charge supercurrent modulation and observe a consistent 2$e$-periodic pattern indicating a general lack of low-energy subgap states in these nanowires at zero magnetic field. In a parallel magnetic field, an even-odd pattern develops with a gate-charge spacing that oscillates as a fu…
We present experimental and numerical studies of a light-emitting transistor comprising two quasi-lateral junctions between a two-dimensional electron and hole gas. These lithographically defined junctions are fabricated by etching of a modulation doped GaAs/AlGaAs heterostructure. In this device electrons and holes can be directed to the same area by drain and gate voltages, defining a recombination zone tunable in size and position. It could therefore provide an architecture for probing low-dimensional devices by analysing the emitted light of the recombination zone.
We observed current-voltage characteristics of superconducting single charge transistors with on-chip resistors of R about R_Q = h/4e^2 = 6.45 kOhm, which are explained in terms of Cooper-pair cotunneling. Both the effective strength of Josephson coupling and the cotunneling current are modulated by the gate-induced charge on the transistor island. For increasing values of the resistance R we found the Cooper pair current at small transport voltages to be dramatically suppressed.
We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements performed as a function of applied source-drain bias, electron number and magnetic field reveal well defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative differential regime is the spin-polarized detection of …
We measure the high-frequency emission of a single Cooper pair transistor(SCPT) in the regime where transport is only due to tunneling of Cooper pairs. This is achieved by coupling on-chip the SCPT to a superconductor-insulator-superconductor junction and by measuring the photon assisted tunneling current of quasiparticles across the junction. This technique allows a direct detection of the AC Josephson effect of the SCPT and provides evidence of Landau-Zener transitions for proper gate voltage. The emission in the regime of resonant Cooper pair tunneling is also investigated. It is interprete…
We consider the microwave dynamics and transport properties of a voltage-biased single-Cooper-pair transistor. The dynamics is shown to be strongly affected by interference between multiple microwave-induced inter-level transitions. As a result the magnitude and direction of the dc Josephson current are extremely sensitive to small variations of the bias voltage and to changes in the frequency of the microwave field.
We have measured the Cooper Pair Transistor (CPT) in a tunable electromagnetic environment consisting of four one-dimensional SQUID arrays. The transport properties of the CPT in the high impedance limit, Z_env>>R_Q=6.45~kΩ, are studied for different ratios of the Josephson coupling energy to the charging energy. As the impedance of the environment is increased, the current-voltage characteristic (IVC) of the CPT develops a Coulomb blockade of Cooper pair tunneling and the measured IVCs agree qualitatively with a theory based on quasicharge dynamics for a CPT. Increasing the impedance of the e…
The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10V/nm to 0.83V/nm. …
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage tunable emission is demonstrated. We establish that the physical mechanism of the coherent TeraHertz emission is related to the plasma waves driven by simultaneous current and optical excitation. A significant shift of the plasma frequency and the narrowing of the emission with increasing channel's current are observed and explained as due to the increase of the carriers density and drift velocit…
An all-superconductor charge qubit enabling a radio-frequency readout of its quantum state is described. The core element of the setup is a superconducting loop which includes the single-Cooper-pair (Bloch) transistor. This circuit has two functions: First, it operates as a charge qubit with magnetic control of Josephson coupling and electrostatic control of the charge on the transistor island. Secondly, it acts as the transducer of the rf electrometer, which probes the qubit state by measuring the Josephson inductance of the transistor. The evaluation of the basic parameters of this device sh…
We study a Cooper-pair transistor realized by two Josephson weak links that enclose a superconducting island in an InSb-Al hybrid nanowire. When the nanowire is subject to a magnetic field, isolated subgap levels arise in the superconducting island and, due to the Coulomb blockade,mediate a supercurrent by coherent co-tunneling of Cooper pairs. We show that the supercurrent resulting from such co-tunneling events exhibits, for low to moderate magnetic fields, a phase offset that discriminates even and odd charge ground states on the superconducting island. Notably,this phase offset persists wh…
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by three lateral graphene gates and an additional back gate. The tunneling coupling is a strongly nonmonotonic function of gate voltage indicating the presence of localized states in the barriers. We investigate energy scales for the tunneling gap, the resonances in the constrictions and for the Coulomb blockade resonances. From Coulomb diamond measurements in…
The outlook of protected quantum computing spurred enormous progress in the search for topological materials, sustaining a continued race to find the most experimentally feasible platform. Here, we show that one of the simplest quantum circuits, the Cooper-pair transistor, exhibits a nontrivial Chern number which has not yet been discussed, in spite of the exhaustive existing literature. Surprisingly, the resulting quantized current response is robust with respect to a large number of external perturbations, most notably low-frequency charge noise and quasiparticle poisoning. Moreover, the fac…
We have fabricated a Cooper-pair transistor (CPT) with parameters such that for appropriate voltage biases, the sub-gap charge transport takes place via slow tunneling of quasiparticles that link two Josephson-coupled charge manifolds. In between the quasiparticle tunneling events, the CPT behaves essentially like a single Cooper-pair box (SCB). The effective capacitance of a SCB can be defined as the derivative of the induced charge with respect to gate voltage. This capacitance has two parts, the geometric capacitance, C_geom, and the quantum capacitance C_Q. The latter is due to the level a…
We propose a scheme involving a Cooper pair transistor (CPT) embedded in a superconducting microwave cavity, where the CPT serves as a charge tunable quantum inductor to facilitate ultra-strong coupling between photons in the cavity and a nano- to meso-scale mechanical resonator. The mechanical resonator is capacitively coupled to the CPT, such that mechanical displacements of the resonator cause a shift in the CPT inductance and hence the cavity's resonant frequency. The amplification provided by the CPT is sufficient for the zero point motion of the mechanical resonator alone to cause a sign…
By configuring a radio-frequency single-electron transistor as a mixer, we demonstrate a unique implementation of this device, that achieves good charge sensitivity with large bandwidth about a tunable center frequency. In our implementation we achieve a measurement bandwidth of 16 MHz, with a tunable center frequency from 0 to 1.2 GHz, demonstrated with the transistor operating at 300 mK. Ultimately this device is limited in center frequency by the RC time of the transistor's center island, which for our device is ~ 1.6 GHz, close to the measured value. The measurement bandwidth is determined…
The Cooper-pair transistor (CPT), a small superconducting island enclosed between two Josephson weak links, is the atomic building block of various superconducting quantum circuits. Utilizing gate-tunable semiconductor channels as weak links, the energy scale associated with the Josephson tunneling can be changed with respect to the charging energy of the island, tuning the extent of its charge fluctuations. Here, we directly demonstrate this control by mapping the energy level structure of a CPT made of an indium arsenide nanowire (NW) with a superconducting aluminum shell. We extract the dev…
The parity modulation of the ground state of a superconducting island is a direct consequence of the presence of the Cooper pair condensate preferring an even number of charge carriers. The addition energy of an odd, unpaired quasiparticle equals to the superconducting gap, $Δ$, suppressing single electron hopping in the low temperature limit. Controlling the quasiparticle occupation is of fundamental importance for superconducting qubits as single electron tunneling results in decoherence. In particular, topological quantum computation relies on the parity control and readout of Majorana boun…
We investigate low-temperature and low-voltage-bias charge transport in a superconducting Al single electron transistor in a dissipating environment, realized as on-chip high-ohmic Cr microstrips. In our samples with relatively large charging energy values Ec > EJ, where EJ is the energy of the Josephson coupling, two transport mechanisms were found to be dominating, both based on discrete tunneling of individual Cooper pairs: Depending on the gate voltage Vg, either sequential tunneling of pairs via the transistor island (in the open state of the transistor around the points Qg = CgVg = e mod…
We show how population inversion (PI) occurs in a two-level system (TLS) while measuring its charge using a capacitively coupled superconducting single-electron transistor (SSET), biased in the subgap regime, where the current through the SSET is carried by different cycles involving tunneling of both Cooper pairs and quasiparticles. The PI is directly associated with the resonant nature of the Cooper-pair tunneling. We also show how the SSET may strongly relax the TLS, although there is negligible current flowing through the SSET, i.e. it is turned off. The calculation of the quantum back-act…
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate voltage. The spin polarization can be turned off and even inverted. This behavior enables a spin transistor where the signal is switched off by turning off the spin injection using the field-effect. We propose a model based on a gate-dependent shift of the minimum in the graphene density of states with respect to the tunneling density of states of cobalt, wh…
We investigate the quantum versus classical dynamics of a microwave cavity-coupled-Cooper pair transistor (CPT) system, where an applied dc bias causes the system to self-oscillate via the ac Josephson effect. Varying the dc bias allows the self-oscillation frequency to be tuned. An unusual feature of the system design is that the dc bias does not significantly affect the high quality factor of the cavity mode to which the CPT predominantly couples. The CPT-cavity mode system has a mechanical analogue involving a driven coupled pendulum-oscillator system. The corresponding, nonlinear classical…
We have studied the microwave response of a single Cooper-pair transistor (CPT) coupled to a lumped-element microwave resonator. The resonance frequency of this circuit, $f_{r}$, was measured as a function of the charge $n_{g}$ induced on the CPT island by the gate electrode, and the phase difference across the CPT, $ϕ_{B}$, which was controlled by the magnetic flux in the superconducting loop containing the CPT. The observed $f_{r}(n_{g},ϕ_{B})$ dependences reflect the variations of the CPT Josephson inductance with $n_{g}$ and $ϕ_{B}$ as well as the CPT excitation when the microwaves induce …
We analyze charge tunneling statistics and current noise in a superconducting single-electron transistor in a regime where the Josephson-quasiparticle cycle is the dominant mechanism of transport. Due to the interplay between Coulomb blockade and Josephson coherence, the probability distribution for tunneling events strongly deviates from a Poissonian and displays a pronounced even--odd asymmetry in the number of transmitted charges. The interplay between charging and coherence is reflected also in the zero-frequency current noise which is significantly quenched when the quasi-particle tunneli…
Phosphorene, a honeycomb structure of black phosphorus, was isolated recently. We investigate electric properties of phosphorene nanoribbons based on the tight-binding model. A prominent feature is the presence of quasi-flat edge bands entirely detached from the bulk band. We explore the mechanism of the emergence of the quasi-flat bands analytically and numerically from the flat bands well known in graphene by a continuous deformation of a honeycomb lattice. The quasi-flat bands can be controlled by applying in-plane electric field perpendicular to the ribbon direction. The conductance is swi…
A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance observed during the last decades in devices with lateral semiconducting (SC) transport channels between ferromagnetic (FM) source (S) and drain (D) contacts has been the main obstacle for realizing spin field effect transistor proposals. Here, we show both, a large two terminal magnetoresistance in lateral 2DES-based spin valve geometry, with up to 80% resistanc…
Bilayer graphene has the very interesting property of an energy gap tunable with the vertical electric field. We propose an analytical model for a bilayer-graphene field-effect transistor, suitable for exploring the design parameter space and to find a device structure with promising performance in terms of transistor operation. Our model, based on the effective mass approximation and ballistic transport assumptions, takes into account bilayer-graphene tunable gap and self polarization, and includes all band-to-band tunneling current components, which are shown to represent the major limitatio…
We discuss the properties of devices of small Josephson junctions in the light of the phase fluctuation theory and the energy band structure, which arises from the delocalization of the phase variable. The theory is applied in the realization of a mesoscopic amplifier, the Bloch oscillating transistor. The device characteristics and comparison with theory and simulations are discussed. The current gain of the device in a stable operating mode has been measured to be as high as 30. Measurements on input impedance and the power gain show that the BOT is an amplifier designed for middle-range imp…
A niobium titanite nitride-based superconducting nanodevice in which the Josephson critical current can be modulated by a gate voltage - a Cooper-pair transistor - has proven a remarkably long parity lifetime exceeding one minute at temperatures close to absolute zero.
We consider a single Cooper pair transistor (SCPT) coupled capacitively to a voltage biased Josephson junction, used as a high frequency generator. Thanks to the high energy of photons generated by the Josephson junction, transitions between energy levels, not limited to the first two levels, were induced and the effect of this irradiation on the DC Josephson current of the SCPT was measured. This allows to probe the phase and gate bias dependence of energy levels of the SCPT at high energy. Because the energies of photons can be higher than the superconducting gap we can induce not only trans…
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of manipulating the density of free charges in monolayer MoS$_2$ using a combination of laser exposure and gate voltage application. The photodoping promotes changes on the conductance of MoS$_2$ leading to photomemory states with high memory on/off ratio. Such memory states are non-volatile with an expectation of retaining up to 50 % of the information for tens of …
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments. The prevailing p-type transport observed at room pressure is reversibly turned into dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The press…
We present a theoretical analysis of the quantum dynamics of a superconducting circuit based on a highly asymmetric Cooper pair transistor (ACPT) in parallel to a dc-SQUID. Starting from the full Hamiltonian we show that the circuit can be modeled as a charge qubit (ACPT) coupled to an anharmonic oscillator (dc-SQUID). Depending on the anharmonicity of the SQUID, the Hamiltonian can be reduced either to one that describes two coupled qubits or to the Jaynes-Cummings Hamiltonian. Here the dc-SQUID can be viewed as a tunable micron-size resonator. The coupling term, which is a combination of a c…
Dynamic wavelength tunability has long been the holy grail of photodetector technology. Because of its atomic thickness and unique properties, graphene opens up new paradigms to realize this concept, but so far this has been elusive experimentally. Here we employ detailed quantum transport modeling of photocurrent in graphene field-effect transistors (including realistic electromagnetic fields) to show that wavelength tunability is possible by dynamically changing the gate voltage. We reveal the phenomena that govern the behavior of this type of device and show significant departure from the s…
Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge and spin signals, integrated within the simplest three-terminal device configuration. In a conventional FET device, a gate electrode is employed to tune the Fermi level of the system in and out of a static bandgap. By contrast, in the switching mechanism proposed here, the applied gate voltage can dynamically open and close an interaction gap, with only a m…
We investigate electron transport through a diatomic molecule parallelly coupled to infinite source and drain contacts. We utilize a model Hamiltonian involving a Hubbard term in which the contacts are modeled using recently developed complex source and sink potentials. The zero bias transmission spectrum for a symmetrically coupled system as a function of the Fermi energy acquires a Fano lineshape as the Hubbard interaction is turned on. For large values of $U$, the Fano lineshape broadens and shifts to higher energy values disappearing eventually. Meanwhile, the Breit-Wigner resonance locate…
We consider a finite-size topological Josephson junction formed at the edge of a two-dimensional topological insulator in proximity to conventional superconductors and study the impact of Cooper pair symmetries on the electron transport. We find that, due to the finite junction size, electron transport is highly tunable by the superconducting phase difference $ϕ$ across the junction. At zero frequency and $ϕ=π$, the setup exhibits vanishing local Andreev reflection and perfect normal transmission due to the interplay of finite junction size and formation of topological Andreev bound states in …
The Single Cooper Pair Josephson Transistor is a device that exhibits at the same time charge quantization and phase coherence. Coherent quantum phase slip phenomenon is "dual" the Josephson phase coherence while the charge quantization is dual to the flux quantization. We present the experimental demonstration and the theoretical description of a new superconducting device - Single Flux Transistor, which is dual to the Single Cooper Pair Transistor. Our transport measurements show the periodic modulation of the critical voltage by the external magnetic field. The obtained current-voltage char…
The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors exhibit reversible, electrically-tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F4TCNQ molecules was achieved on a graphene FET at T = 4.5K. This capability enables precisely controlled impurity doping of graphene devices and also provides a new method for determining molecular energy level alignment ba…
The use of artificial atoms as an active lasing medium opens a way to construct novel sources of nonclassical radiation. An example is the creation of photon-number squeezed light. Here we present a design of a laser consisting of multiple Cooper-pair transistors coupled to a microwave resonator. Over a broad range of experimentally realizable parameters, this laser creates photon-number squeezed microwave radiation, characterized by a Fano factor $F \ll 1$, at a very high resonator photon number. We investigate the impact of gate-charge disorder in a Cooper-pair transistor and show that the s…
Structural and electronic properties of silicene adsorbed by five kinds of transition metal atoms (Cu, Ag, Au, Pt, and Ir) are systematically studied by using first-principles calculations. We find that such adsorption can induce a band gap at the Dirac point of doped silicene. Doped silicene can reach a band gap up to 0.23 eV while keeping a relatively small effective mass of around 0.1 me, thus having high carrier mobility estimated to be 50000 cm2/Vs. P-type doping and neutral state is realized in silicene by Ir and Pt adsorption, respectively, while n-type doping is done by Cu, Ag, and Au …
