Gate-tunable non-volatile photomemory effect in MoS$_2$ transistors

Non Volatile MoS$_{2}$ Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric

We demonstrate non-volatile, n-type, back-gated, MoS$_{2}$ transistors, placed directly on an epitaxial grown, single crystalline, PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ (PZT) ferroelectric. The transistors show decent ON current (19 $μA/μ$m), high on-off ratio (10$^{7}$), and a subthreshold swing of (SS ~ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have selfconsistently confirmed the switching of the ferroelectric and corresponding change in channel cu…

Electrically Induced, Non-Volatile, Metal Insulator Transition in a Ferroelectric Gated MoS$_2$ Transistor

We demonstrate an electrically induced, non-volatile, metal-insulator phase transition in a MoS$_2$ transistor. A single crystalline, epitaxially grown, PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT) was placed in the gate of a field effect transistor made of thin film MoS$_2$. When a gate voltage is applied to this ferroelectric gated transistor, a clear transition from insulator to metal and vice versa is observed. Importantly, when the gate voltage is turned off, the remnant polarization in the ferroelectric can keep the MoS$_2$ in its original phase, thereby providing a non-volatile state. Thus a metal…

用于人工神经元应用的具有横向银离子迁移的挥发性MoS${_2}$忆阻器

Volatile MoS${_2}$ Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

本文提出基于MOCVD生长多层MoS${_2}$的横向银离子迁移挥发性忆阻器，实现无forming、低电压、快速且可重复的电阻开关，并建立物理紧凑模型，探索其作为人工神经元在神经形态系统中的应用。

Edge-based 2D alpha-In2Se3-MoS2 ferroelectric field effect device

Heterostructures based on two dimensional (2D) materials offer the possibility to achieve synergistic functionalities which otherwise remain secluded by their individual counterparts. Herein ferroelectric polarization switching in alpha-In2Se3 has been utilized to engineer multilevel non-volatile conduction states in partially overlapping alpha-In2Se3-MoS2 based ferroelectric semiconducting field effect device. In particular, we demonstrate how the intercoupled ferroelectric nature of alpha-In2Se3 allows to non-volatilely switch between n-i and n-i-n type junction configurations based on a nov…

Ultrafast non-volatile flash memory based on van der Waals heterostructures

Flash memory has become a ubiquitous solid-state memory device, it is widely used in portable digital devices, computers, and enterprise applications. The development of the information age has put forward higher requirements for memory speed and retention performance. Here, we demonstrate an ultrafast non-volatile memory based on MoS2/h-BN/multi-layer graphene (MLG) van der Waals heterostructures, which has an atomic-level flat interface and achieves ultrafast writing/erasing speed (~20 ns), surpassing the reported state-of-the-art flash memory (~100 ns). The ultrafast flash memory could lay …

由铁电晶体管驱动的非易失性混合光学移相器

Non-volatile hybrid optical phase shifter driven by a ferroelectric transistor

本研究利用源极跟随模式铁电晶体管驱动III-V/Si混合MOS移相器，制备出CMOS兼容、多态、低能耗的非易失性光学移相器，还提出交叉阵列架构简化大规模PIC控制，为新型计算用可编程PIC奠定基础。