基于三维存储层的非易失性磁隧道结的超高可扩展性研究
Towards Ultra Scalability of Non-Volatile Magnetic Tunnel Junctions with a 3D Storage Layer
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中文总结 AI 辅助
该研究针对垂直自旋转移力矩磁随机存取存储器在亚20nm节点的可扩展性问题，提出通过增加存储层厚度利用形状各向异性的方案，实现亚10nm节点下高热稳定性与更快开关速度，为超小型磁隧道结高密度阵列提供可行路径。
中文摘要 AI 辅助
垂直自旋转移力矩磁随机存取存储器是基于超薄磁隧道结的最具前景的新兴非易失性存储技术之一。然而，这些器件在小于20nm的技术节点处受限于热稳定性因子，其可扩展性受到损害。针对这一限制的可行解决方案是利用形状各向异性，大幅增加存储层厚度。得益于纵横比和体积的提升，可在亚10nm节点处维持高热稳定性。本文介绍了相关技术进展及磁化反转机制的研究，这些进展实现了更低开关电压下的更快开关速度，为超小型磁隧道结的高密度阵列提供了可行方案。
英文摘要
The perpendicular Spin Transfer Torque Magnetic Random Access Memory is one of the most promising emerging non-volatile memory technologies, based on ultra-thin magnetic tunnel junctions. However, as these devices are limited by their thermal stability factor at technological nodes smaller than 20 nm, their scalability is compromised. A possible solution to this limitation relies on taking advantage of the shape anisotropy, by increasing substantially the thickness of the storage layer. Thanks to the combination of a vertical aspect-ratio and enhanced volume, high thermal stability can be maintained at sub-10 nm nodes. Here, we present the technological advancements and understanding of the magnetisation reversal that led to faster switching speeds at reduced switching voltage, providing a viable approach for dense arrays of ultra-small magnetic tunnel junctions.
