The combination of magnetism and topology in magnetic topological insulators (MTIs) has led to unprecedented advancements of time reversal symmetry-breaking topological quantum physics in the past decade. Compared with the uniform films, the MTI heterostructures provide a better framework to manipulate the spin-orbit coupling and spin properties. In this review, we summarize the fundamental mechanisms related to the physical orders host in (Bi,Sb)2(Te,Se)3-based hybrid systems. Besides, we provide an assessment on the general strategies to enhance the magnetic coupling and spin-orbit torque strength through different structural engineering approaches and effective interfacial interactions. Finally, we offer an outlook of MTI heterostructures-based spintronics applications, particularly in view of their feasibility to achieve room-temperature operation.
We investigate scattering of the topological surface state of a three-dimensional time-reversal invariant topological insulator when graphene is deposited on the topological-insulator surface. Specifically, we consider the (111) surface of a Bi$_2$Se$_3$-like topological insulator. We present a low-energy model for the bulk graphene-topological insulator heterostructure and we calculate the transmission probability at zigzag and armchair edges of the deposited graphene, and the conductance through graphene nanoribbon barriers and show that its features can be understood from antiresonances in …
We study the behavior of non-equilibrium spin density and spin-orbit torque in a topological insulator - antiferromagnet heterostructure. Unlike ferromagnetic heterostructures where Dirac cone is gapped due to time-reversal symmetry breaking, here the Dirac cone is preserved. We demonstrate the existence of a staggered spin density corresponding to a damping like torque, which is quite robust against the scalar impurity, when the transport energy is in the topological insulator surface energy regime. We show the contribution to the non-equilibrium spin density due to both surface and bulk topo…
The search of novel topological phases, such as the quantum anomalous Hall insulator (QAHI) or the axion insulator, has motivated different schemes to introduce magnetism into topological insulators. One scheme is to introduce ferromagnetic dopants in topological insulators. However, it is generally challenging and requires carefully engineered growth/heterostructures or relatively low temperatures to observe the QAHI due to issues such as the added disorder with ferromagnetic dopants. Another promising scheme is using the magnetic proximity effect with a magnetic insulator to magnetize the to…
The possible realization of dissipationless chiral edge current in a topological insulator / magnetic insulator heterostructure is based on the condition that the magnetic proximity exchange coupling at the interface is dominated by the Dirac surface states of the topological insulator. Here we report a polarized neutron reflectometry observation of Dirac electrons mediated magnetic proximity effect in a bulk-insulating topological insulator (Bi$_{0.2}$Sb$_{0.8}$)$_{2}$Te$_{3}$ / magnetic insulator EuS heterostructure. We are able to maximize the proximity induced magnetism by applying an elec…
Topological insulator is composed of an insulating bulk state and time reversal symmetry protected two-dimensional surface states. One of the characteristics of the surface states is the locking between electron momentum and spin orientation. Here, we report a novel in-plane anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures. To explain the novel effect, we propose that the Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructure forms a spin-valve or Giant magnetoresistance device due to spin-momentum locking. The novel in-plane anisotropic magnetoresistance ca…
We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films -- Bi2Se3 and (Bi,Sb)2Te3 -- deposited by molecular beam epitaxy on yttrium iron garnet thin films. By systematically varying the Bi2Se3 film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (lambda_IREE), increases dramatically as the film thickness is increased from 2 quintuple layers, saturating above 6 quintuple layers. This suggests a dominant role of surface stat…
We investigate a topological insulator -- superconductor heterostructure with an Abrikosov vortex in a magnetic field. Large Zeeman field causes a topological phase transition in the system. We found that a Majorana fermion exists at the vortex core in the phase with zero first Chern number and does not exist at the phase with non-trivial first Chern number. This result is supported by the index theorem. This system provides an example in which a Majorana fermion emerges in a system with zero first Chern number.
We demonstrate the van der Waals epitaxy of the topological insulator compound Bi2Te3 on the ferromagnetic insulator Cr2Ge2Te6. The layers are oriented with (001) of Bi2Te3 parallel to (001) of Cr2Ge2Te6 and (110) of Bi2Te3 parallel to (100) of Cr2Ge2Te6. Cross-sectional transmission electron microscopy indicates the formation of a sharp interface. At low temperatures, bilayers consisting of Bi2Te3 on Cr2Ge2Te6 exhibit a large anomalous Hall effect (AHE). Tilted field studies of the AHE indicate that the easy axis lies along the c-axis of the heterostructure, consistent with magnetization meas…
Thanks to its unique symmetry, the unidirectional spin Hall and Rashba-Edelstein magnetoresistance (USRMR) is of great fundamental and practical interest, particularly in the context of reading magnetization states in two-terminal spin-orbit torque switching memory and logic devices. Recent studies show that topological insulators could improve USRMR amplitude. However, the topological insulator device configurations studied so far in this context, namely ferromagnetic metal/topological insulator bilayers and magnetically doped topological insulators, suffer from current shunting by the metall…
Second-order topological insulator, which has (d-2)-dimensional topological hinge or corner states, has been observed in three-dimensional materials, but has yet not been observed in two-dimensional system. In this Letter, we theoretically propose the realization of second-order topological insulator in the van der Waals heterostructure of CoBr$_2$/Pt$_2$HgSe$_3$/CoBr$_2$. Pt$_2$HgSe$_3$ is a large gap $\mathbb{Z}_2$ topological insulator. With in-plane exchange field from neighboring CoBr$_2$, a large band gap above 70 meV opens up at the edge. The corner states, which are robust against edge…
We formulate a continuum model to study the low-energy electronic structure of heterostructures formed by graphene on a strong three-dimensional topological insulator (TI) for the case of both commensurate and incommensurate stacking. The incommensurability can be due to a twist angle between graphene and the TI surface or a lattice mismatch between the two systems. We find that the proximity of the TI induces in graphene a strong enhancement of the spin-orbit coupling that can be tuned via the twist angle.
A thin film of a topological insulator (TI) on a dielectric substrate and a bulk TI - dielectric film - bulk TI structure are considered as natural double-well heterostructures suitable for realizing the counterflow superconductivity. The effect is connected with pairing of electrons and holes belonging to different surfaces of TI and the transition of a gas of electron-hole pairs into a superfluid state. The case of TI heterostructures subjected to a strong perpendicular magnetic field is considered. It is shown that such systems are characterized by two critical temperatures - a mean-field t…
Based on ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a non-trivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a non-zero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system. Moreover, we pr…
We report a gate-controlled transition of a semimetallic InAs/GaSb heterostructure to a topological insulator. The transition is induced by decreasing the degree of band inversion with front and back gate voltages. Temperature dependence of the longitudinal resistance peak shows the energy gap opening in the bulk region with increasing gate electric field. The suppression of bulk conduction and the transition to a topological insulator are confirmed by nonlocal resistance measurements using a dual lock-in technique, which allows us to rigorously compare the voltage distribution in the sample f…
Enhancing the spin-orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron mobility. In order to engineer practical spintronics applications with such graphene/topological insulator (Gr/TI) heterostructures, an understanding of the hybrid spin-dependent properties is essential. {However to date, despite the large number of experimental studies on Gr/TI heterostructures reporting a great variety of remarkable (spin) transport phenomena, little is known about the true nature of the …
We investigate phonon spin transport in an insulating ferromagnet-nonmagnet-ferromagnet heterostructure. We show that the magnetoelastic interaction between the spins and the phonons leads to nonlocal spin transfer between the magnets. This transfer is mediated by a local phonon spin current and accompanied by a phonon spin accumulation. The spin conductance depends nontrivially on the system size, and decays over millimeter length scales for realistic material parameters, far exceeding the decay lengths of magnonic spin currents.
The phenomenon of mesoscopic Spin-Hall effect reveals in a nonequilibrium spin accumulation (driven by electric current) at the edges of a ballistic conductor or, more generally, in the regions with varying electron density. In this paper we review our recent results on spin accumulation in ballistic two-dimensional semiconductor heterostructures with Rashba/Dresselhaus spin orbit interactions, and extend the method developed previously to predict the existince of spin-Hall effect on the surface of three-dimensional topological insulators. The major difference of the new Spin-Hall effect is it…
Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance spin channel materials are available, the use of nanostructured spin generators remains a major challenge. Especially promising for the latter purpose are 3D topological insulators, whose 2D surface states host massless Dirac fermions with spin-momentum locking. Here, we demonstrate injection of spin-polarized current from a topological insulator into graphen…
We develop a Green's function formalism for spin transport through heterostructures that contain metallic leads and insulating ferromagnets. While this formalism in principle allows for the inclusion of various magnonic interactions, we focus on Gilbert damping. As an application, we consider ballistic spin transport by exchange magnons in a metal-insulator-metal heterostructure with and without disorder. For the former case, we show that the interplay between disorder and Gilbert damping leads to spin current fluctuations. For the case without disorder, we obtain the dependence of the transmi…
Interfacing topological insulators (TIs) with magnetic insulators (MIs) has been widely used to study the interaction between topological surface states and magnetism. Previous transport studies typically interpret the suppression of weak antilocalization or appearance of the anomalous Hall effect as signatures of magnetic proximity effect (MPE) imposed to TIs. Here, we report the observation of nonlinear planar Hall effect (NPHE) in Bi2Se3 films grown on MI thulium and yttrium iron garnet (TmIG and YIG) substrates, which is an order of magnitude larger than that in Bi2Se3 grown on nonmagnetic…
Graphene and topological insulators (TI) possess two-dimensional Dirac fermions with distinct physical properties. Integrating these two Dirac materials in a single device creates interesting opportunities for exploring new physics of interacting massless Dirac fermions. Here we report on a practical route to experimental fabrication of graphene-Sb2Te3 heterostructure. The graphene-TI heterostructures are prepared by using a dry transfer of chemical-vapor-deposition grown graphene film. ARPES measurements confirm the coexistence of topological surface states of Sb2Te3 and Dirac π bands of grap…
Heterostructures combining topological and non-topological materials constitute the next frontier in the effort to incorporate topological insulators (TIs) into functional electronic devices. We show that the properties of the interface states appearing at the planar boundary between a topologically-trivial semiconductor (SE) and a TI are controlled by the symmetry of the interface. In contrast to the well-studied helical Dirac surface states, SE-TI interface states exhibit elliptical contours of constant energy and complex spin textures with broken helicity. We derive a general effective Hami…
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments at room temperature. However, memory or logic spin devices based upon such switching require a non-optimal three terminal geometry, with two terminals for the writing current and one for reading the state of the device. An alternative two terminal device geometry is now possible by exploiting the recent discovery of a unidirectional spin Hall magnetoresista…
We propose to use ferromagnetic insulator MnBi2Se4/Bi2Se3/antiferromagnetic insulator Mn2Bi2Se5 heterostructures for the realization of the axion insulator state. Importantly, the axion insulator state in such heterostructures only depends on the magnetization of the ferromagnetic insulator and hence can be observed in a wide range of external magnetic field. Using density functional calculations and model Hamiltonian simulations, we find that the top and bottom surfaces have opposite half-quantum Hall conductance, with a sizable global spin gap of 5.1 meV opened for the topological surface st…
The k.p perturbation method for determination of electronic structure first pioneered by Kohn and Luttinger continues to provide valuable insight to several band structure features. This method has been adopted to heterostructures confined up to three directions. In this paper, numerical details of setting up a k.p Hamiltonian using the finite difference approximation for such confined nanostructures is explicitly demonstrated. Nanostructures belonging to two symmetry classes namely cubic zincblende and rhombohedral crystals are considered. Rhombohedral crystals, of late, have gained prominenc…
As platforms of Majorana modes, topological insulator (quantum anomalous Hall insulator)/superconductor (SC) heterostructures have attracted tremendous attention over the past decade. Here we substitute the topological insulator by its higher-order counterparts. Concretely, we consider second-order topological insulators (SOTIs) without time-reversal symmetry and investigate SOTI/SC heterostructures in both two and three dimensions. Remarkably, we find that such novel heterostructures provide natural realizations of second-order topological superconductors (SOTSCs) which host Majorana corner m…
Controlling magnetic order in magnetic topological insulators (MTIs) is a key to developing spintronic applications with MTIs, and is commonly achieved by changing the magnetic doping concentration, which inevitably affects spin-orbit-coupling strength and the very topological properties. Here, we demonstrate tunable magnetic properties in topological heterostructures over a wide range, from a ferromagnetic phase with Curie temperature of around 100 K all the way to a paramagnetic phase, while keeping the overall chemical composition the same, by controlling the thickness of non-magnetic space…
We investigate theoretically the PbTe/PbSnTe heterostructure grown in [111] direction, specifically a quantum wall (potential step of width d) of PbTe embedded in Pb_{1-x}Sn_{x}Te. For x large enough to lead to band inversion, and for large d, there are well-known gapless interface states associated with four L valleys. We show that for d \approx\ 10 nm the three pairs of states from oblique valleys strongly couple, and become gapped with a gap ~10 meV. On the other hand, the interface states from the [111] valley are essentially uncoupled, and they retain their helical character, remaining an…
The existence of gapless Dirac surface band of a three dimensional (3D) topological insulator (TI) is guaranteed by the non-trivial topological character of the bulk band, yet the surface band dispersion is mainly determined by the environment near the surface. In this Letter, through in-situ angle-resolved photoemission spectroscopy (ARPES) and the first-principles calculation on 3D TI-based van der Waals heterostructures, we demonstrate that one can engineer the surface band structures of 3D TIs by surface modifications without destroying their topological non-trivial property. The result pr…
Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface …
Magnon-mediated spin transport across nonmagnetic metal (NM) and ferromagnetic insulator (FI) interface depends critically on electron-magnon coupling. We propose a novel route to enhance electron-magnon coupling dynamically from transport viewpoint. Using non-equilibrium Green's function a theoretical formalism for magnon-mediated spin current is developed. In the language of transport, the effective electron-magnon coupling at NM/FI interface is determined by self-energy of FI lead, which is proportional to density of states (DOS) at NM/FI interface due to nonlinear process of electron-magno…
We study heterostructures where a two-dimensional topological insulator (TI) is attached to two normal metal (NM) electrodes while an island of a ferromagnetic insulator (FI) with precessing magnetization covers a portion of its lateral edges to induce time-dependent exchange field underneath via the magnetic proximity effect. When the FI island covers both lateral edges, such device pumps pure spin current in the absence of any bias voltage, thereby acting as an efficient spin battery with giant output current even at very small microwave power input driving the precession. When only one late…
We report an experimental study of electron transport properties of MnSe/(Bi,Sb)2Te3 heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)2Te3 is a three-dimensional topological insulator (TI). Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances. Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance, which exceeds 0.1 e2/h at temperature of 1.6 K and magnetic field of 5 T, even though only the top TI surface is in proximity to MnSe. This work suggests that heterost…
Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather from spin-Hall physics of the topological-insulator bulk remains unclear. Here, we explore a mechanism of spin-torque generation purely based on the topological surface states. We consider topological-insulator-based bilayers involving ferromagnetic metal (TI/FM) and magnetically doped topological insulators (TI/mdTI), respectively. By ascribing the…
Pure spin currents, i.e. the transport of angular momentum without an accompanying charge current, represent a new, promising avenue in modern spintronics from both a fundamental and an application point of view. Such pure spin currents can not only flow in electrical conductors via mobile charge carriers, but also in magnetically ordered electrical insulators as a flow of spin excitation quanta. Over the course of the last years remarkable results have been obtained in heterostructures consisting of magnetically ordered insulators interfaced with a normal metal, where a pure spin current flow…
Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface states (TSS). However, to realize more advanced devices and phenomena, there is a need for a platform to tune the TSS or modify them e.g. gap them by proximity with magnetic insulators, in a clean ma…
We show that a semiconductor thin film can acquire a non-trivial spin texture due to the proximity effect induced by a topological insulator. The effect stems from coupling to the topological surface states and is present even when the insulator is doped. We propose a semiconductor/topological insulator heterostructure as a device that allows measuring interface properties and probing surface states in uncompensated samples. We also find that the topological insulator surface modes can be significantly broadened and shifted by the presence of metallic contacts.
The control of a ferromagnet's magnetization via only electric currents requires the efficient generation of current-driven spin-torques. In magnetic structures based on topological insulators (TIs) current-induced spin-orbit torques can be generated. Here we show that the addition of graphene, or bilayer graphene, to a TI-based magnetic structure greatly enhances the current-induced spin density accumulation and significantly reduces the amount of power dissipated. We find that this enhancement can be as high as a factor of 100, giving rise to a giant Edelstein effect. Such a large enhancemen…
We use magnetotransport in dual-gated magnetic topological insulator heterostructures to map out a phase diagram of the topological Hall and quantum anomalous Hall effects as a function of the chemical potential (primarily determined by the back gate voltage) and the asymmetric potential (primarily determined by the top gate voltage). A theoretical model that includes both surface states and valence band quantum well states allows the evaluation of the variation of the Dzyaloshinskii-Moriya interaction and carrier density with gate voltages. The qualitative agreement between experiment and the…
We study DC and AC transport in low-density $p-$Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex AC conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the 2D hole layer. The observed behaviors of DC and AC conductance are interpreted as an evolution from metallic conductance at B=0 through hopping between localized states in intermediate magnetic fields (close to the plateau of the integer quantum Hall effect corresponding to the Landau-level fil…
Studying the influence of breaking time-reversal symmetry on topological insulator surface states is an important problem of current interest in condensed matter physics and could provide a route toward proof-of-concept spintronic devices that exploit spin-textured surface states. Here, we develop a new model system for studying the effect of breaking time-reversal symmetry: a hybrid heterostructure wherein a ferromagnetic semiconductor Ga1-xMnxAs, with an out-of-plane component of magnetization, is cleanly interfaced with a three-dimensional topological insulator (Bi,Sb)2(Te,Se)3 by molecular…
The problem of screening the Coulomb interaction between charge carriers in type II heterostructures based on transition metal dichalcogenides is Analytically solved. At a sufficiently high density of charge carriers, the density dependence of the interlayer exciton energy is obtained. The energy of the interlayer exciton tends to zero in the metal--insulator transition point. The presented scheme of calculations makes it possible to find the temperature dependence of the density of this transition.
The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability of the TI Dirac cone gap helps reduce its sub-threshold swing. By exploiting this reciprocal behaviour, we can use two FM/3DTI heterostructures to design a 1-Transistor 1-magnetic tunnel junction ran…
The low-energy band-structure of electrons propagating on a lateral surface of a heterostructure consisting of three dimensional topological insulator (TI) and magnetic insulator layers has been calculated. The energy spectrum is highly tunable depending on the relation between the interlayer tunneling amplitude, Zeeman energy and surface potential. A ratio between the first two parameters controls a topological transition between chiral and helical surface state band-structures. In the former case localized states, whose wave-functions are confined near single TI layers, emerge in a narrow pa…
The magnetoelectric effect predicted in topological insulators makes heterostructures that combine magnetic materials and such insulators promising candidates for spintronics applications. Here, we theoretically consider a setup that exhibits two well-separated interfaces between a topological insulator and a ferromagnetic insulator. We show that there is a topological magnetic dipole-dipole interaction stemming from long-range Coulomb interactions. We analytically derive the magnetization dynamics at the two interfaces and discuss how the long-range coupling can be applied to non-locally indu…
We predict an unconventional spin-transfer torque (STT) acting on the magnetization of a free ferromagnetic (F) layer within N/TI/F vertical heterostructures which originates from strong spin-orbit coupling (SOC) on the surface of a three-dimensional topological insulator (TI), as well as from charge current becoming spin-polarized in the direction of transport as it flows from the normal metal (N) across the bulk of the TI slab. Unlike conventional STT in symmetric F'/I/F magnetic tunnel junctions, where only the in-plane STT component is non-zero in the linear response, both the in-plane and…
Prototypical three-dimensional topological insulators of the Bi$_2$Se$_3$ family provide a beautiful example of the appearance of the surface states inside the bulk band gap caused by spin-orbit coupling-induced topology. The surface states are protected against back scattering by time reversal symmetry, and exhibit spin-momentum locking whereby the electron spin is polarized perpendicular to the momentum, typically in the plane of the surface. On the other hand, graphene is a prototypical two-dimensional material, with negligible spin-orbit coupling. When graphene is placed on the surface of …
Multiple chiral Majorana states in proximitized magnetic topological insulator heterostructures
Universidad Autónoma de Madrid（马德里自治大学）；Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid（马德里自治大学凝聚态物理中心（IFIMAC））；Instituto de Estructura de la Materia IEM-CSIC（CSIC物质结构研究所）；Instituto Nicolás Cabrera, Universidad Autónoma de Madrid（马德里自治大学尼古拉斯·卡布雷拉研究所）
Topological insulators are new states of matter with a bulk gap and robust gapless surface states protected by time-reversal symmetry. When time-reversal symmetry is broken, the surface states are gapped, which induces a topological response of the system to electromagnetic field--the topological magnetoelectric effect. In this paper we study the behavior of topological surface states in heterostructures formed by a topological insulator and a magnetic insulator. Several magnetic insulators with compatible magnetic structure and relatively good lattice matching with topological insulators ${\r…
We apply the Niemi-Semenoff index theorem to an s-wave superconductor junction system attached with a magnetic insulator on the surface of a three-dimensional topological insulator. We find that the total number of the Majorana zero energy bound states is governed not only by the gapless helical mode but also by the massive modes localized at the junction interface. The result implies that the topological protection for Majorana zero modes in class D heterostructure junctions may be broken down under a particular but realistic condition.
We report on the first experimental observation of an apparent metal insulator transition in a 2D electron gas confined in an InAs quantum well. At high densities we find that the carrier mobility is limited by background charged impurities and the temperature dependence of the resistivity shows a metallic behavior with resistivity increasing with increasing temperature. At low densities we find an insulating behavior below a critical density of $n_{c} = 5 \times 10^{10}$ cm$^{-2}$ with the resistivity decreasing with increasing temperature. We analyze this transition using a percolation model…
Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent works on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have established the tunabili…
