基于量子反常霍尔效应的非易失性低温随机存储器
A Non-Volatile Cryogenic Random-Access Memory Based on the Quantum Anomalous Hall Effect
摘要：
铁磁性和电子能带结构拓扑性质之间的相互作用导致霍尔电阻在没有任何外部磁场的情况下精确量化。这种所谓的量子反常霍尔效应（QAHE）是由拓扑相关性产生的，并且不受低样本质量的影响。它被设想为导致无耗散和拓扑保护的电子产品。然而，没有明确的框架来设计这样的电子设备。在这里，我们构建一个超低功耗，非易失性，低温存储器架构，利用QAHE现象。我们的设计承诺数量级较低的细胞面积相比，国家的最先进的低温存储器技术。我们利用莫尔石墨烯异质结构中的基本量子化霍尔电阻水平来存储非易失性二进制位（1，0）。我们执行存储器写入操作，通过控制滞后切换之间的量子化霍尔状态，使用纳米安培级电流与相反的极性。非破坏性读取操作通过使用单独的一对端子感测横向霍尔电压的极性来执行。我们定制设计的存储器架构与一种新的传感机制，以避免意外的数据损坏，确保最高的存储器密度和最小化阵列泄漏功率。我们的设计是可转移到任何材料平台展示QAHE，并提供了实现拓扑保护的存储器设备的途径。
英文摘要：
The interplay between ferromagnetism and topological properties of electronic band structures leads to a precise quantization of Hall resistance without any external magnetic field. This so-called quantum anomalous Hall effect (QAHE) is born out of topological correlations, and is oblivious of low-sample quality. It was envisioned to lead towards dissipationless and topologically protected electronics. However, no clear framework of how to design such an electronic device out of it exists. Here we construct an ultra-low power, non-volatile, cryogenic memory architecture leveraging the QAHE phenomenon. Our design promises orders of magnitude lower cell area compared with the state-of-the-art cryogenic memory technologies. We harness the fundamentally quantized Hall resistance levels in moiré graphene heterostructures to store non-volatile binary bits (1, 0). We perform the memory write operation through controlled hysteretic switching between the quantized Hall states, using nano-ampere level currents with opposite polarities. The non-destructive read operation is performed by sensing the polarity of the transverse Hall voltage using a separate pair of terminals. We custom design the memory architecture with a novel sensing mechanism to avoid accidental data corruption, ensure highest memory density and minimize array leakage power. Our design is transferrable to any material platform exhibiting QAHE, and provides a pathway towards realizing topologically protected memory devices.
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