使用圆形忆阻纳米栅实现自旋霍尔纳米振荡器的大幅非易失性频率调谐
Large Non-Volatile Frequency Tuning of Spin Hall Nano-Oscillators using Circular Memristive Nano-Gates
AI总结：
针对自旋霍尔纳米振荡器阵列的单器件调谐难题，提出偏移式圆形忆阻纳米栅方案，实现超200MHz的无损伤大幅非易失性频率调谐，可用于大型振荡器网络的同步精准调控。
摘要：
自旋霍尔纳米振荡器（SHNOs）凭借其微型化尺寸、非线性、快速动力学特性以及在长链和阵列中实现同步的能力，是神经形态计算领域极具前景的候选器件。然而，对长链/阵列中的单个SHNO进行调谐——这是实现突触控制的关键——一直是一项难题。在此，我们展示了与W/CoFeB/HfOx结构的纳米收缩型SHNO精确对准和偏移设置的圆形忆阻纳米栅，提升了器件调谐性能。研究发现，在纳米收缩区域的正中心施加栅压会对氧化物层造成不可逆的退化，导致自振荡模式产生永久性频移。作为解决方案，将栅极偏移到紧邻纳米收缩区域之外的位置，可以在不对收缩区域造成任何永久性改变的情况下，实现频率的大幅调谐（>200 MHz）。因此，圆形忆阻纳米栅可应用于SHNO链/阵列中，在大型振荡器网络上精确调控同步状态。
英文摘要：
Spin Hall nano oscillators (SHNOs) are promising candidates for neuromorphic computing due to their miniaturized dimensions, non-linearity, fast dynamics, and ability to synchronize in long chains and arrays. However, tuning the individual SHNOs in large chains/arrays, which is key to implementing synaptic control, has remained a challenge. Here, we demonstrate circular memristive nano-gates, both precisely aligned and shifted with respect to nano-constriction SHNOs of W/CoFeB/HfOx, with increased quality of the device tunability. Gating at the exact center of the nano-constriction region is found to cause irreversible degradation to the oxide layer, resulting in a permanent frequency shift of the auto-oscillating modes. As a remedy, gates shifted outside of the immediate nano-constriction region can tune the frequency dramatically (>200 MHz) without causing any permanent change to the constriction region. Circular memristive nano-gates can, therefore, be used in SHNO chains/arrays to manipulate the synchronization states precisely over large networks of oscillators.
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