arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2009.13191cond-mat.mtrl-sci
收藏

(Mg,Zr):SrGa $_{12}$ O $_{19}$晶体生长的Phase diagram研究

Phase diagram studies for the growth of (Mg,Zr):SrGa$_{12}$O$_{19}$ crystals

Leibniz-Institut für Kristallzüchtung(莱布尼茨晶体生长研究所);Institute of Physics, Poznan University of Technology(波兹南理工大学物理研究所)

Detlef Klimm, Bartosz Szczefanowicz, Nora Wolff, Matthias Bickermann

摘要:

通过差热分析,观察到适合于Zr、Mg共掺杂的六镓酸锶晶体生长的浓度场,其与Mateika和Laurien,J. Crystal Growth 52(1981)566-572的实验结果很好地一致。结果表明,掺杂晶体的熔点约为100 ℃。60 K。与未掺杂的SrO-Ga $_2$ O $_3$熔体相比,这种较高的熔点表明通过Zr、Mg共掺杂的六方镓酸盐相稳定化,并且增加了生长窗口。

英文摘要:

By differential thermal analysis a concentration field suitable for the growth of Zr, Mg codoped strontium hexagallate crystals was observed that corresponds well with experimental results from Mateika and Laurien, J. Crystal Growth 52 (1981) 566-572. It was shown that the melting point of doped crystal is ca. 60 K higher than that of undoped crystals. This higher melting points indicates hexagallate phase stabilization by Zr, Mg codoping, and increases the growth window, compared to undoped SrO-Ga$_2$O$_3$ melts.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑