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arXiv 2009.03366cond-mat.supr-con
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超掺杂态下超导YBa$_2$Cu$_3$O$_{7-δ}$薄膜的极高临界电流密度

Ultra-high critical current densities of superconducting YBa$_2$Cu$_3$O$_{7-δ}$ thin films in the overdoped state

A. Stangl, A. Palau, G. Deutscher, X. Obradors, T. Puig

AI总结:

研究了YBCO薄膜从欠掺杂到过掺杂态的氧掺杂,发现过掺杂下临界电流密度随载流子密度持续增加,在量子临界点达极高值,为提升REBCO涂层导体的载流能力提供了新途径。

摘要:

掺杂是调控铜酸盐功能最相关的途径之一,它决定了这些令人瞩目的超导材料的载流子密度和整体物理性质。我们展示了YBa$_2$Cu$_3$O$_{7-δ}$(YBCO)薄膜从欠掺杂态到过掺杂态的氧掺杂研究,关联了测量的载流子密度$n_\ extrm{H}$、空穴掺杂$p$和临界电流密度$J_\ extrm{c}$。我们的结果表明,$J_\ extrm{c}$随载流子密度持续增加,在5 K下,在量子临界点(QCP)处的$p$掺杂下达到90 MA/cm$^2$,这与超导凝聚能的增加有关。所实现的超高$J_\ extrm{c}$相当于拆对电流的三分之一,即比以往在YBCO薄膜中报道的值高60%。过掺杂区域的特征是$n_\ extrm{H}$突然增加,这与QCP处费米面的重构有关。过掺杂YBCO为扩展REBCO涂层导体在应用中的载流能力开辟了一条有前景的途径。

英文摘要:

Doping is one of the most relevant paths to tune the functionality of cuprates, it determines carrier density and the overall physical properties of these impressive superconducting materials. We present an oxygen doping study of YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) thin films from underdoped to overdoped state, correlating the measured charge carrier density, $n_\textrm{H}$, the hole doping, $p$, and the critical current density, $J_\textrm{c}$. Our results show a continuous increase of $J_\textrm{c}$ with charge carrier density, reaching 90 MA/cm$^2$ at 5 K for $p$-doping at the Quantum Critical Point (QCP), linked to an increase of the superconducting condensation energy. The ultra-high $J_\textrm{c}$ achived corresponds to a third of the depairing current, i.e. a value 60 % higher than ever reported in YBCO films. The overdoped regime is characterized by a sudden increase of $n_\textrm{H}$, associated to the reconstruction of the Fermi-surface at the QCP. Overdoping YBCO opens a promising route to extend the current carrying capabilities of REBCO coated conductors for applications.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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