We address the electronic properties of quantum dots in the two-dimensional $α-\mathcal{T}_3$ lattice when subjected to a perpendicular magnetic field. Implementing an infinite mass boundary condition, we first solve the eigenvalue problem for an isolated quantum dot in the low-energy, long-wavelength approximation where the system is described by an effective Dirac-like Hamiltonian that interpolates between the graphene (pseudospin 1/2) and Dice (pseudospin 1) limits. Results are compared to a full numerical (finite-mass) tight-binding lattice calculation. In a second step we analyse charge transport through a contacted $α-\mathcal{T}_3$ quantum dot in a magnetic field by calculating the local density of states and the conductance within the kernel polynomial and Landauer-Büttiker approaches. Thereby the influence of a disordered environment is discussed as well.
Density-functional theory is used to study the electronic structure of quantum dots in a magnetic field. New series of magic numbers are found for the total angular momentum of electrons. The empirical formula for the plateau width is obtained. The effect of a charged impurity on the electronic structure of a quantum dot has been studied.
The electronic spin precession in semiconductor dots is strongly affected by the spin-orbit coupling. We present a theory of the electronic spin resonance at low magnetic fields that predicts a strong dependence on the dot occupation, the magnetic field and the spin-orbit coupling strength. Coulomb interaction effects are also taken into account in a numerical approach.
We investigate the effects of point charge defects on the single particle electronic structure, emission energies, fine structure splitting and oscillator strengths of excitonic transitions in strained In$_{0.6}$Ga$_{0.4}$As/GaAs and strain-free GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum dots. We find that the charged defects significantly modify the single particle electronic structure and excitonic spectra in both strained and strain-free structures. However, the excitonic fine structure splitting, polarization anisotropy and polarization direction in strained quantum dots remain nearly unaffected,…
We present a study of the electronic structure of two laterally coupled gaussian quantum dots filled with two particles. The exact diagonalization method has been used in order to inspect the spatial correlations and examine the particular spin singlet-triplet configurations for different coupling degrees between quantum dots. The outcome of our research shows this structure to have highly modifiable properties promoting it as an interesting quantum device, showing the possible use of this states as a quantum bit gate.
The authors report that anisotropic confining potentials in laterally-coupled semiconductor quantum dots (QDs) have large impacts in optical transitions and energies of inter-shell collective electronic excitations. The observed anisotropies are revealed by inelastic light scattering as a function of the in-plane direction of light polarization and can be finely controlled by modifying the geometrical shape of the QDs. These experiments show that the tuning of the QD confinement potential offers a powerful method to manipulate electronic states and far-infrared inter-shell optical transitions …
This paper presents a six-band k.p theory for wurtzite semiconductor nanostructures with cylindrical symmetry. Our work extends the formulation of Vahala and Sercel [Physical Review Letters 65, 239 (1990)] to the Rashba-Sheka-Pikus Hamiltonian for wurtzite semiconductors, without the need for the axial approximation. Results comparing our formulation for studying the electronic structure of wurzite quantum dots with the conventional formulation are given.
Electronic transport through a triple quantum dot system, with only a single dot coupled directly to external leads, is considered theoretically. The model includes Coulomb correlations in the central dot, while such correlations in the two side-coupled dots are omitted. The infinite-U mean-field slave-boson approach is used to obtain basic transport characteristics in the Kondo regime. When tuning position of the side-coupled dots' levels, transition from subradiant to superradiant like mode (and vice versa) has been found in the spectral function, in analogy to the Dicke effect in atomic phy…
We theoretically investigate the absorption and emission of light carrying orbital angular momentum (twisted-light) by quasi-two-dimensional (disc-shaped) quantum dots in the presence of a static magnetic field. We calculate the transition matrix element for the light-matter interaction and use it to explore different scenarios, depending on the initial and final state of the electron undergoing the optically-induced transition. We make explicit the selection rule for the conservation of the z-projection of the orbital angular momentum. For a realistic set of parameters (quantum dots size, bea…
Recent controversy on the quantum dots dephasing mechanisms (between pure and inelastic) is re-examined by isolating the quantum dots from their substrate by using the appropriate limits of the ionization energy theory and the quantum adiabatic theorem. When the phonons in the quantum dots are isolated adiabatically from the phonons in the substrate, the elastic or pure dephasing becomes the dominant mechanism. On the other hand, for the case where the phonons from the substrate are non-adiabatically coupled to the quantum dots, the inelastic dephasing process takes over. This switch-over is d…
Electronic properties of triangular and hexagonal nano-scale quantum dots (QDs) of Silicene and bilayer graphene are studied. It is shown that the low-energy edge-localized electronic states, existing within the size-quantized gap are easily tunable by electric field. The appearance and field evolution of the electronic gap in these zero energy states (ZES) is shown to be very sensitive to QD geometry that permits to design the field-effect scalable QD devices with electronic properties on-demand.
The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19 type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using …
We study the electronic and magnetic properties of multilayer quantum dots (MQDs) of graphite in the nearest-neighbor approximation of tight-binding model. We calculate the electronic density of states and orbital susceptibility of the system as function of the Fermi level location. We demonstrate that properties of MQD depend strongly on the shape of the system, on the parity of the layer number and on the form of the cluster edge. The special emphasis is given to reveal the new properties with respect to the monolayer quantum dots of graphene. The most interesting results are obtained for th…
Detailed theoretical studies of the electronic structure of (InGa)(AsSb)/GaAs/GaP quantum dots are presented. This system is unique since it exhibits concurrently direct and indirect transitions both in real and momentum space and is attractive for applications in quantum information technology, showing advantages as compared to the widely studied (In,Ga)As/GaAs dots. We proceed from the inspection of the confinement potentials for ${\bf k}\neq 0$ and ${\bf k}= 0$ conduction and ${\bf k}= 0$ valence bands, through the formulation of ${\bf k}\cdot{\bf p}$ calculations for ${\bf k}$-indirect tra…
We present a fully electronic analogue of coherent population trapping in quantum optics, based on destructive interference of single-electron tunneling between three quantum dots. A large bias voltage plays the role of the laser illumination. The trapped state is a coherent superposition of the electronic charge in two of these quantum dots, so it is destabilized as a result of decoherence by coupling to external charges. The resulting current I through the device depends on the ratio of the decoherence rate Gamma_phi and the tunneling rates. For Gamma_phi --> 0 one has simply I=e Gamma_phi. …
We investigate the electronic transport through a suspended carbon-nanotube quantum dot. In the presence of a magnetic field perpendicular to the nanotube and a nearby metallic gate, two forces act on the electrons: the Laplace and the electrostatic force. They both induce coupling between the electrons and the mechanical transverse oscillation modes. We find that the difference between the two mechanisms appears in the cotunneling current.
We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling barriers are 30 nm in width. The double quantum dot features addition energies on the order of 20 meV. Charge stability diagrams allow us to study the tunable interdot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points over a large energy range. The obtained constant level spacing of 1.75 meV over a…
We apply an elementary measurement scheme to calculate the electronic triplet-singlet transition mediated by hyperfine interaction in a double quantum dot. We show how the local character of the hyperfine interaction and the nuclear back-action process (flip-flop) are crucial to cancel destructive interferences of the triplet-singlet transition probability. It is precisely this cancellation which differentiates the hyperfine interaction from an anisotropic magnetic field which mixes the triplet and the singlet eigenstates.
We theoretically investigate the electronic and magneto-optical properties of rectangular, hexangular, and triangular monolayer phosphorene quantum dots (MPQDs) utilizing the tight-binding method. The electronic states, density of states, electronic density distribution, and Laudau levels as well as the optical absorption spectrum are calculated numerically. Our calculations show that: (1) edge states appear in the band gap in all kinds of MPQDs regardless of their shapes and edge configurations due to the anisotropic electron hopping in monolayer phosphorene (MLP). Electrons in any edge state…
In this work, we investigate the electronic and optical properties of the b-AsP quantum dots(QDs) and quantum rings(QRs) with different edge types in the presence of an in-plane electric field and a perpendicular magnetic field utilizing the tight-binding method. Our calculations show that the electronic and optical properties of edge states largely depend on the edge types. By adjusting the intensity of the electric field or magnetic field, the probability density can be effectively tuned. In particular, under an in-plane electric field, novel edge states emerge in rhombus QDs and QRs with δ …
In this work, we present and evaluate a (111)-rotated eight-band $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian for the zinc-blende crystal lattice to investigate the electronic properties of site-controlled InGaAs/GaAs quantum dots grown along the [111] direction. We derive the rotated Hamiltonian including strain and piezoelectric potentials. In combination with our previously formulated (111)-oriented continuum elasticity model, we employ this approach to investigate the electronic properties of a realistic site-controlled (111)-grown InGaAs quantum dot. We combine these studies with an evaluation…
We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box including up to million atoms with periodic boundary conditions and parabolic confining potential due to external gates embedded in it. With this methodology applied to MoS2, we find a twofold degenerate energy spectrum of electrons confined in the two non-equivalent K-valleys by the metallic gates as well as six-fold degenerate spectrum associated with Q-v…
The transport through a quantum wire exposed to two magnetic spikes in series is modeled. We demonstrate that quantum dots can be formed this way which couple to the leads via magnetic barriers. Conceptually, all quantum dot states are accessible by transport experiments. The simulations show Breit-Wigner resonances in the closed regime, while Fano resonances appear as soon as one open transmission channel is present. The system allows to tune the dot's confinement potential from sub-parabolic to superparabolic by experimentally accessible parameters.
We present theoretical results concerning inelastic light (Raman) scattering from semiconductor quantum dots. The characteristics of each dot state (whether it is a collective or single-particle excitation, its multipolarity, and its spin) are determined independently of the Raman spectrum, in such a way that common beliefs used for level assignments in experimental spectra can be tested. We explore the usefulness of below band gap excitation and an external magnetic field to identify charge and spin excited states of a collective or single-particle nature.
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and nonlinear optical effect. Due to advantages like less crystal defects and relatively simpler fabrication technology, that material may be of important value in future nanoelectronic device researches. In the order of vertical transport, lateral transport and charge storage, this paper gives a brief introduction of recent advances in the electronic properties of t…
We wish to draw an attention to a non-gibbsian behavior of zero-dimensional semiconductor nanostructures, which appears to be manifested in experiments by an effect of incomplete depopulation from electronic excited states or by an effect of up-conversion of electronic level occupation after preparing the system in the ground state of electronic excitation. In the present work the effect is interpreted with help of electron-LO-phonon interaction, which is supposed to play a role in these structures in the form of multiple-scattering of electron on the optical phonons. Quantum kinetic equation …
The orbital angular momentum L as an integer can be ultimately factorized as a product of prime numbers. We show here a close relation between the resolution of L and the classification of quantum states of an N-electron 2-dimensional system. In this scheme, the states are in essence classified into different types according to the m(k)-accessibility, namely the ability to get access to symmetric geometric configurations. The m(k)-accessibility is an universal concept underlying all kinds of 2-dimensional systems with a center. Numerical calculations have been performed to reveal the electroni…
Electronic states in silicon quantum dots are examined theoretically, taking into account a multivalley structure of the conduction band. We find that (i) exchange interaction hardly works between electrons in different valleys. In consequence electrons occupy the lowest level in different valleys in the absence of Hund's coupling when the dot size is less than 10 nm. High-spin states are easily realized by applying a small magnetic field. (ii) When the dot size is much larger, the electron-electron interaction becomes relevant in determining the electronic states. Electrons are accommodated i…
We report an observation of charge conservation breaking in a model study of electronic current noise of transport through a dissipative double quantum dot within generalized master equation formalism. We study the current noise through a double quantum dot coupled to two electronic leads in the high bias limit and a dissipative heat bath in the weak coupling limit. Our calculations are based on the solution of a Markovian generalized master equation. Zero-frequency component of the current noise calculated within the system, i.e., between the two dots, via the quantum regression theorem exhib…
Longitudinal optical phonons have been used to interpret the electronic energy relaxation in quantum dots and at the same time they served as a reservoir, with which the electronic subsystem is in contact. Such a phonon subsystem is expected to be passive, namely, in a long-time limit the whole system should be able to achieve such a stationary state, in which statistical distributions of both subsystems do not change in time. We pay attention to this property of the LO phonon bath. We show the passivity property of the so far used approximations to electronic transport in quantum dots. Also w…
We present here an atomistic theory of the electronic and optical properties of hexagonal InAsP quantum dots in InP nanowires in the wurtzite phase. These self-assembled quantum dots are unique in that their heights, shapes, and diameters are well known. Using a combined valence-force-field, tight-binding, and configuration-interaction approach we perform atomistic calculations of single-particle states and excitonic, biexcitonic and trion complexes as well as emission spectra as a function of the quantum dot height, diameter and As versus P concentration. The atomistic tight-binding parameter…
Recently, black phosphorus quantum dots were fabricated experimentally. Motivated by these experiments, we theoretically investigate the electronic and optical properties of rectangular phosphorene quantum dots (RPQDs) in the presence of an in-plane electric field and a perpendicular magnetic field. The energy spectra and wave functions of RPQDs are obtained numerically using the tight-binding (TB) approach. We find edge states within the band gap of the RPQD which are well separated from the bulk states. In an undoped RPQD and for in-plane polarized light, due to the presence of well-defined …
We calculate, via spin density functional theory (SDFT) and exact diagonalization, the eigenstates for electrons in a variety of external potentials, including double and triple dots. The SDFT calculations employ realistic wafer profiles and gate geometries and also serve as the basis for the exact diagonalization calculations. The exchange interaction J between electrons is the difference between singlet and triplet ground state energies and reflects competition between tunneling and the exchange matrix element, both of which result from overlap in the barrier. For double dots, a characterist…
We theoretically investigate the effects of long-range disorder and electron-electron interactions on the optical properties of hexagonal armchair graphene quantum dots consisting of up to 10806 atoms. The numerical calculations are performed using a combination of tight-binding, mean-field Hubbard and configuration interaction methods. Imperfections in the graphene quantum dots are modelled as a long-range random potential landscape, giving rise to electron-hole puddles. We show that, when the electron-hole puddles are present, tight-binding method gives a poor description of the low-energy a…
We investigate the emission directionality of electronic intraband (intersubband) transitions in stacked coupled quantum dots. Using a well-established eight-band $k \cdot p$ method, we demonstrate that the minor contributions from the valence band mixing into the conduction band govern the polarization and emission directionality of electronic $p$-to-$s$-type intraband transitions. Despite that the contribution from the central-cell part to the momentum matrix element is dominant, we find, the contribution from the matrix elements among the envelope functions cannot be neglected. With the hel…
A consistent semiquantitative theoretical analysis of electronic Raman scattering from many-electron quantum dots under resonance excitation conditions has been performed. The theory is based on random-phase-approximation-like wave functions, with the Coulomb interactions treated exactly, and hole valence-band mixing accounted for within the Kohn-Luttinger Hamiltonian framework. The widths of intermediate and final states in the scattering process, although treated phenomenologically, play a significant role in the calculations, particularly for well above band gap excitation. The calculated p…
Electronic structure and transport characteristics of coupled CdS and ZnSe quantum dots are studied using density functional theory and non equilibrium Greens function method respectively. Our investigations show that in these novel coupled dots, the frontier occupied and unoccupied molecular orbitals are spatially located in two different parts of the coupled dot, thereby indicating the possibility of asymmetry in electronic transport. We have calculated electronic transport through the coupled quantum dot by varying the coupling strength between the individual quantum dots in the limits of w…
In this work we present a detailed analysis of the second-order piezoelectric effect in $c$-plane In$_{x}$Ga$_{1-x}$N/GaN quantum dots and its consequences for electronic and optical properties of these systems. Special attention is paid to the impact of increasing In content $x$ on the results. We find that in general the second-order piezoelectric effect leads to an increase of the electrostatic built-in field. Furthermore, our results show that for an In content $\geq$30\% this increase in the built-in field has a significant effect on the emission wavelength and the radiative lifetimes. Fo…
We demonstrate high-temperature thermoelectric conversion in InAs/InP nanowire quantum dots by taking advantage of their strong electronic confinement. The electrical conductance G and the thermopower S are obtained from charge transport measurements and accurately reproduced with a theoretical model accounting for the multi-level structure of the quantum dot. Notably, our analysis does not rely on the estimate of co-tunnelling contributions since electronic thermal transport is dominated by multi-level heat transport. By taking into account two spin-degenerate energy levels we are able to eva…
We present a novel "linear combination of atomic orbitals"-type of approximation, enabling accurate electronic structure calculations for systems of up to 20 or more electronically coupled quantum dots. Using realistic single quantum dot wavefunctions as basis to expand the eigenstates of the heterostructure, our method shows excellent agreement with full 8-band $\boldsymbol{k}\cdot\boldsymbol{p}$ calculations, exemplarily chosen for our benchmarking comparison, with an orders of magnitude reduction in computational time. We show that, in order to correctly predict the electronic properties of…
We have investigated the electronic states of planar quantum dots at the ZnO interface containing a few interacting electrons in an externally applied magnetic field. In these systems, the electron-electron interaction effects are expected to be much stronger than in traditional semiconductor quantum systems, such as in GaAs or InAs quantum dots. In order to highlight that stronger Coulomb effects in the ZnO quantum dots, we have compared the energy spectra and the magnetization in this system to those of the InAs quantum dots. We have found that in the ZnO quantum dots, the signatures of stro…
We calculate that the electron states of strained self-assembled Ge/Si quantum dots provide a convenient two-state system for electrical control. An electronic state localized at the apex of the quantum dot is nearly degenerate with a state localized at the base of the quantum dot. Small electric fields shift the electronic ground state from apex-localized to base-localized, which permits sensitive tuning of the electronic, optical and magnetic properties of the dot. As one example, we describe how spin-spin coupling between two Ge/Si dots can be controlled very sensitively by shifting the ind…
We study a system in which electrons in a two-dimensional electron gas are confined by a nonhomogeneous nuclear spin polarization. The system consists of a heterostructure that has non-zero nuclei spins. We show that in this system electrons can be confined into a dot region through a local nuclear spin polarization. The nuclear-spin-polarization-induced quantum dot has interesting properties indicating that electron energy levels are time-dependent because of the nuclear spin relaxation and diffusion processes. Electron confining potential is a solution of diffusion equation with relaxation. …
The electronic energy gap and total dipole moment of chemically functionalized hexagonal and triangular graphene quantum dots are investigated by the density functional theory. It has been found that the energy gap can be efficiently tuned in the selected clusters by edge passivation with different elements or groups. Edge passivation with oxygen provides a considerable decrease of the large energy gap observed in hexagonal nanodots. The edge states and energy gap in triangular graphene quantum dots can also be manipulated by passivation with fluorine. The total dipole moment strongly depends …
We study the effect of the Dresselhaus spin-orbit interaction on the electronic states and spin relaxation rates of cylindrical quantum dots defined on quantum wires having wurtzite lattice structure. The linear and cubic contributions of the bulk Dresselhaus spin-orbit coupling are taken into account, along with the influence of a weak external magnetic field. The previously found analytic solution for the electronic states of cylindrical quantum dots with zincblende lattice structures with Rashba interaction is extended to the case of quantum dots with wurtzite lattices. For the electronic s…
We analyze electron spin relaxation in electronic transport through coherently coupled double quantum dots in the spin blockade regime. In particular, we focus on hyperfine interaction as the spin relaxation mechanism. We pay special attention to the effect of the dynamical nuclear spin polarization induced by the electronic current on the nuclear environment. We discuss the behaviour of the electronic current and the induced nuclear spin polarization versus an external magnetic field for different hyperfine coupling intensities and interdot tunnelling strengths. We take into account, for each…
Using the tight-binding approach, we investigate the energy spectrum of square, triangular and hexagonal MoS$_2$ quantum dots (QDs) in the presence of a perpendicular magnetic field. Novel edge states emerge in MoS$_2$ QDs, which are distributed over the whole edge which we call ring states. The ring states are robust in the presence of spin-orbit coupling (SOC). The corresponding energy levels of the ring states oscillate as function of the perpendicular magnetic field which are related to Aharonov-Bohm oscillations. Oscillations in the magnetic field dependence of the energy levels and the p…
In this work the intersubband electronic properties of two laterally coupled dome-shaped InAs/GaAs quantum dots were investigated. The envelope functions and eigenenergies were calculated as function of distance between the dots. The coupling between the dots was studied using transition lifetime between the dots. The results showed that in close distances (smaller than 3 nm) the quantum dots are coupled and by increasing the distance transition lifetime fall down drastically and the dots become uncoupled.
We developed a set of equations to calculate the electronic Green's functions in a T-shaped multi-quantum dot system using the equation of motion method. We model the system using a generalized Anderson Hamiltonian which accounts for {\em finite} intradot on-site Coulomb interaction in all component dots as well as for the interdot electron tunneling between adjacent quantum dots. Our results are obtained within and beyond the Hartree-Fock approximation and provide a path to evaluate all the electronic correlations in the multi-quantum dot system in the Coulomb blockade regime. Both approximat…
We theoretically investigate the effect of inhomogeneous light beams with (twisted light) and without (plane-wave light) orbital angular momentum on semiconductor-based nanostructures, when the symmetry axes of the beam and the nanostructure are displaced parallel to each other. Exact analytical results are obtained by expanding the off-centered light field in terms of the appropriate light modes centered around the nanostructure. We demonstrate how electronic transitions involving the transfer of different amounts of orbital angular momentum are switched on and off as a function of the separa…
The band modulation of the silicene and graphene quantum dots is investigated by a first-principles method. This study includes the ordinary silicene and graphene quantum dots and the embedded quantum dots in the hydrogenated silicene and graphene. The shapes and sizes of quantum dots are recognized as important factors for the electronic properties. We studied several types of quantum dots: triangular, parallelogram, rectangular, hexagonal dots. It demonstrates the energy gap of the quantum dot can be tuned by the dot size, the larger of the dot the smaller the energy gap. Moreover, the shape…
Electronic and magnetic properties of a system of two charged vacancies in hexagonal shaped graphene quantum dots are investigated using a mean-field Hubbard model as a function of the Coulomb potential strength $β$ of the charge impurities and the distance R between them. For $β=0$, the magnetic properties of the vacancies are dictated by Lieb's rules where the opposite (same) sub-lattice vacancies are coupled antiferromagnetically (ferromagnetically) and exhibit Fermi oscillations. Here, we demonstrate the emergence of a non-magnetic regime within the subcritical region: as the Coulomb poten…
We test the valley-filtering capabilities of a quantum dot inscribed by locally straining an $α$-$\mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and calculate the generated pseudomagnetic field having an opposite direction for electrons originating from different valleys, the resulting valley-polarized currents, and the conductance between the injector and collector situated opposite one another. Depending on the quantum dot's width and width-to-height ratio, we detect different transport regimes with and without v…
We present a theory for the dissipation of electronic spins trapped in quantum dots due to their coupling to the host lattice acoustic phonon modes. Based on the theory of dissipative two level systems for the spin dynamics, we derive a relation between the spin dissipative bath, the electron confinement, and the electron-phonon interaction. We find that there is an energy scale, typically smaller than the electronic lateral confinement energy, which sets the boundary between different dissipative regimes .
Quantum dots are arguably the best interface between matter spin qubits and flying photonic qubits. Using quantum dot devices to produce joint spin-photonic states requires the electronic spin qubits to be stored for extended times. Therefore, the study of the coherence of spins of various quantum dot confined charge carriers is important both scientifically and technologically. In this study we report on spin relaxation measurements performed on five different forms of electronic spin qubits confined in the very same quantum dot. In particular, we use all optical techniques to measure the spi…
The power factor of a thermoelectric device is a measure of the heat-to-energy conversion efficiency in nanoscopic devices. Yet, even as interest in low-dimensional thermoelectric materials has increased, experimental research on what influences the power factor in these systems is scarce. Here, we present a detailed thermoelectric study of graphene quantum dot devices. We show that spin-degeneracy of the quantum dot states has a significant impact on the zero-bias conductance of the device and leads to an increase of the power factor. Conversely, we demonstrate that non-ideal heat exchange wi…
We investigate how two-particle interactions affect the electronic transport through meso- and nanoscopic systems of two different types: quantum dots with local Coulomb correlations and quasi one-dimensional quantum wires of interacting electrons. A recently developed functional renormalization group scheme is used that allows to investigate systems of complex geometry. Considering simple setups we show that the method includes the essential aspects of Luttinger liquid physics (one-dimensional wires) as well as of the physics of local correlations, with the Kondo effect being an important exa…
The conductance through two quantum dots in series is studied using general qualitative arguments and quantitative slave-boson mean-field theory. It is demonstrated that measurements of the conductance can explore the phase diagram of the two-impurity Anderson model. Competition between the Kondo effect and the inter-dot magnetic exchange leads to a two-plateau structure in the conductance as a function of gate voltage and a two or three peak structure in the conductance vs. inter-dot tunneling.
