Reflection of Electrons during Tunneling and an Intersubband Polaron in the 2D Electron System of a Delta-Layer in GaAs
S. E. Dizhur, I. N. Kotel'nikov, E. M. Dizhur
备注：
This is a post-peer-review, pre-copyedit version of an article published in Journal of Communications Technology and Electronics, 2006, Vol. 51, No. 5, pp. 588-595. The final authenticated version is available online at: https://doi.org/10.1134/S1064226906050123
发表信息：
Journal of Communications Technology and Electronics, 2006, Vol. 51, No. 5, pp. 588-595
Al-$δ$-GaAs structures are studied where tunneling to one or more subbands of the 2D electron system of a near-surface delta-doped layer is observed. Reflection of electrons at the threshold of the emission of LO-phonon is observed. This phenomenon occurs when a new subband is involved in the tunneling process and when intersubband transitions of the electrons in a 2D-system with the emission of LO-phonon are added to the inelastic tunneling within a single subband. It is shown that, under the conditions of an intersubband polaron resonance, the reflection processes dominate during tunneling into the delta-layer. If, however, tunneling from the delta-layer occurs, the reflection processes are observed when two subbands are occupied.
Universidad Politécnica de Madrid（马德里理工大学）；Université Côte d'Azur, CNRS, CRHEA（蔚蓝海岸大学，法国国家科学研究中心，高能物理与应用研究中心）；Institute for Quantum Electronics, ETH Zürich（苏黎世联邦理工学院量子电子研究所）；Center for Nanoscience and Nanotechnology, Univ. Paris-Sud, University Paris Saclay（巴黎南大学纳米科学技术中心，巴黎萨克雷大学）
Development of polaron-transformed explicitly correlated full configuration interaction method for investigation of quantum-confined Stark effect in GaAs quantum dots
Electron-induced nuclear magnetic ordering in n-type semiconductors
重新讨论了正超精细常数n-杂质半导体的核磁性质。在深冷核自旋系统中，驻留电子可以诱导两种核磁有序。在低于临界值的正核自旋温度下，得到了与I。梅尔库洛夫[I. Merkulov，Physics of the Solid State 40，930（1998）]。这些极化子是随机取向的，并且在每个极化子内，核自旋和电子自旋反铁磁性地对齐。在低于临界值的负核自旋温度下，我们预测了另一种类型的磁有序-动力学诱导核铁磁体。这是一种涉及电子和原子核的长程铁磁有序状态。如果电子自旋弛豫是由超精细耦合而不是由自旋轨道相互作用主导的，它就可以形成。将该理论应用于n掺杂GaAs表明，在实验可达到的核自旋温度$Θ_N \approx 0.5$ $μ$ K和晶格温度$T_L \approx 5$ K下可以达到铁磁有序。
