二维硒化铋的高保真传输及其力学性能
High-Fidelity Transfer of 2D Bismuth Oxyselenide and its Mechanical Properties
摘要：
具有高电子迁移率的二维（2D）硒氧化铋（Bi 2 O2 Se）在未来的高性能和柔性电子和光电子器件中具有优势。然而，薄的Bi 2 O2 Se薄片的转移是相当具有挑战性的，限制了其机械性能的测量和在柔性器件中的应用探索。在这里，我们开发了一个可靠的和有效的聚二甲基硅氧烷（PDMS）介导的方法，允许薄的Bi 2 O2 Se薄片从生长的基板上的目标基板，如微机电系统基板。转移的薄片的高保真度源于PDMS膜的高粘附能和柔性。首次采用纳米压痕法对二维Bi_2O_2Se的力学性能进行了实验研究。我们发现，在二维半导体材料中，少层结构的Bi_2 O_2Se具有18-23 GPa的内禀刚度，杨氏模量为88. 7 ± 14. 4 GPa，与理论值一致。此外，少层Bi 2 O2 Se可以承受超过3%的高径向应变，表现出优异的柔性。2D Bi 2 O2 Se的可靠转移方法的开发和力学性能的记录共同填补了这一新兴材料的力学性能的理论预测和实验验证之间的空白，并将促进基于2D Bi 2 O2 Se的柔性电子和光电子学。
英文摘要：
Two-dimensional (2D) bismuth oxyselenide (Bi2O2Se) with high electron mobility is advantageous in future high-performance and flexible electronic and optoelectronic devices. However, transfer of thin Bi2O2Se flakes is rather challenging, restricting measurements of its mechanical properties and application exploration in flexible devices. Here, we develop a reliable and effective polydimethylsiloxane (PDMS)-mediated method that allows transferring thin Bi2O2Se flakes from grown substrates onto target substrates like micro-electro-mechanical system substrates. The high fidelity of the transferred thin flakes stems from the high adhesive energy and flexibility of PDMS film. For the first time, the mechanical properties of 2D Bi2O2Se are experimentally acquired with nanoindentation method. We found that few-layer Bi2O2Se exhibits a large intrinsic stiffness of 18-23 GPa among 2D semiconductors, and a Young' s modulus of 88.7 +- 14.4 GPa which is consistent with the theoretical values. Furthermore, few-layer Bi2O2Se can withstand a high radial strain of more than 3%, demonstrating excellent flexibility. The development of the reliable transfer method and documentation of mechanical properties of 2D Bi2O2Se jointly fill the gap between theoretical prediction and experimental verification of mechanical properties of this emerging material, and will promote flexible electronics and optoelectronics based on 2D Bi2O2Se.
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