In0.52 Al 0.48 As中稳态和瞬态电子输运的综合研究
Comprehensive studies on steady-state and transient electronic transport in In0.52Al0.48As
摘要：
在InP衬底上用In \textsubscript{0.52} Al \textsubscript{0.48} As/In \textsubscript{0.53} Ga \textsubscript{0.47} As制作的高电子迁移率晶体管（HEMT）由于其良好的微波、光学和数字应用性能而成为大量实验研究的焦点。本文采用半经典系综Monte Carlo方法，在三谷模型下对In \textsubscript{0.52} Al \textsubscript{0.48} As中的稳态和瞬态电子输运进行了详细而全面的研究，包括所有重要的散射机制。所有的电子输运参数，如漂移速度，山谷占领，平均电子能量，电离系数和产生率，电子有效质量，扩散系数，能量和动量弛豫时间从模拟中严格提取。使用这些，我们提出了一个完整的表征的瞬态电子输运显示的漂移速度随距离和时间的变化。然后，我们通过速度过冲效应估计了各种器件长度的最佳截止频率。我们的分析表明，器件长度短于$700$ nm，瞬态效应是显着的，应该考虑到最佳的器件设计。作为一个关键的例子，在大约$100$ nm的长度尺度，我们得到了显着的改善，在截止频率从$261$ GHz到$663$ GHz的瞬态效应的列入。所有提取参数的场依赖性可以证明是有助于进一步的器件分析和设计。
英文摘要：
High electron mobility transistors (HEMT) built using In\textsubscript{0.52}Al\textsubscript{0.48}As/In\textsubscript{0.53}Ga\textsubscript{0.47}As on InP substrates are a focus of considerable experimental studies due to their favourable performance for microwave, optical and digital applications. We present a detailed and comprehensive study of steady state and transient electronic transport in In\textsubscript{0.52}Al\textsubscript{0.48}As with the three valley model using the semi-classical ensemble Monte Carlo method and including all important scattering mechanisms. All electronic transport parameters such drift velocity, valley occupation, average electron energy, ionization coefficient and generation rate, electron effective mass, diffusion coefficient, energy and momentum relaxation time are extracted rigorously from the simulations. Using these, we present a complete characterization of the transient electronic transport showing the variation of drift velocity with distance and time. We have then estimated the optimal cut-off frequencies for various device lengths via the velocity overshoot effect. Our analysis shows that for device lengths shorter than $700$ nm, transient effects are significant and should be taken into account for optimal device designs. As a critical example, at length scales of around $100$ nm, we obtain a significant improvement in the cut-off frequency from $261$ GHz to $663$ GHz with the inclusion of transient effects. The field dependence of all extracted parameters here can prove to be helpful for further device analysis and design.
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