We consider various methods and techniques for measuring electron magnetization and susceptibility, which are used in experimental condensed matter physics. The list of considered methods for macroscopic measurements includes magnetomechanic, electromagnetic, modulation-type, and also thermodynamic methods based on the chemical potential variation. We also consider local methods of magnetic measurements based on the spin Hall effects and NV-centers. Several scanning probe magnetometers-microscopes are considered, such as magnetic resonance force microscope, SQUID-microscope, and Hall microscope. The review focuses on the spin magnetization measurements of electrons in non-magnetic materials and artificial systems, particularly, in low-dimensional electron systems in semiconductors and in nanosystems, which came to the forefront in recent years.
Kondo systems are usually described by the interaction of strong correlation induced local moment with the highly itinerant conduction electrons. Here, we study the role of electron correlations among conduction electrons in the electronic structure of a Kondo lattice compound, Ce$_2$CoSi$_3$, using high resolution photoemission spectroscopy and {\it ab initio} band structure calculations, where Co 3$d$ electrons contribute in the conduction band. High energy resolution employed in the measurements helped to reveal signature of Ce 4$f$ states derived Kondo resonance feature at the Fermi level …
We have examined the valence-band electronic structures of gold and silver in the same column in the periodic table with nominally filled d orbitals by means of a recently developed polarization-dependent hard x-ray photoemission. Contrary to a common expectation, it is found that the 5d-orbital electrons contribute prominently to the conduction electrons in gold while the conduction electrons in silver are to some extent free-electron-like with negligible 4d contribution, which could be related to a well-known fact that gold is more stable than silver in air. The 4d electron correlation effec…
Non-linear conduction in a single crystal of charge-ordered Pr$_{0.63}$Ca$_{0.37}$MnO$_{3}$ has been investigated in an applied magnetic field. In zero field, the non-linear conduction, which starts at T$<$T$_{CO}$ can give rise to a region of negative differential resistance (NDR) which shows up below the Néel temperature. Application of a magnetic field inhibits the appearance of NDR and makes the non-linear conduction strongly hysteritic on cycling of the bias current. This is most severe in the temperature range where the charge ordered state melts in an applied magnetic field. Our experim…
We report the growth of films of the intrinsic ferromagnetic semiconductor NdN, and an investigation of their optical and transport properties. There is clear evidence of a strong anomalous Hall effect as expected from a 4f conduction channel, supported by an optical absorption into a 4f or 4f/5d hybridized tail at the base of the conduction band. The results reveal a heavy-fermion 4f/5d band lying where it can be occupied at controllable levels with nitrogen-vacancy donors.
We find that the long-range magnetic ordering is absent and electrical conduction suppressed in Y$_{1.7}$Bi$_{0.3}$Ir$_2$O$_7$/YSZ(100) thin film prepared by pulsed laser deposition. The sharp down-turn of inverse magnetic susceptibility X-1(T) from the conventional Curie-Weiss behaviour below T* ~ 168K suggests an inhomogeneous ferromagnetic Griffiths like phase. The transport and magnetic properties are explained on the basis of the coexistence of mixed oxidation states of Ir, (i.e. Ir4+ and Ir3+) leading to non-magnetic defects and reduction in t2g density of states at the Fermi level.
Local moment magnon spectrum in conduction electron tunnelling
Max Planck Institute for the Chemical Physics of Solids（马克斯·普朗克固体化学物理研究所）；Beijing Institute of Mathematical Sciences and Applications (BIMSA)（北京数学科学与应用研究院）
We observe the electron spin resonance of conduction electrons in boron doped (6400 ppm) superconducting diamond (Tc =3.8 K). We clearly identify the benchmarks of conduction electron spin resonance (CESR): the nearly temperature independent ESR signal intensity and its magnitude which is in good agreement with that expected from the density of states through the Pauli spin-susceptibility. The temperature dependent CESR linewidth weakly increases with increasing temperature which can be understood in the framework of the Elliott-Yafet theory of spin-relaxation. An anomalous and yet unexplained…
Low-temperature transport and magnetization measurements for the antiferromagnets SrMnO(3) and CaMnO(3) identify an impurity band of mobile states separated by energy E from electrons bound in Coulombic potentials. Very weak electric fields are sufficient to excite bound electrons to the impurity band, increasing the mobile carrier concentration by more than three orders of magnitude. The data argue against the formation of self-trapped magnetic polarons (MPs) predicted by theory, and rather imply that bound MPs become stable only for kT<<E.
We clarify the two-channel Kondo effect in the seven-orbital Anderson model hybridized with $Γ_8$ conduction electrons by employing a numerical renormalization group method.From the numerical analysis for the case with two local $f$ electrons, corresponding to Pr$^{3+}$ or U$^{4+}$ ion, we confirm that a residual entropy of $0.5\log 2$, a characteristic of two-channel Kondo phenomena,appears for the local $Γ_3$ non-Kramers doublet state. For further understanding on the $Γ_3$ state, the effective model is constructed on the basis of a $j$-$j$ coupling scheme. Then, we rediscover the two-channe…
Using photoconduction study we demonstrate that the low-temperature Ohmic conduction of TaS$_3$ is not provided by single-particle excitations -- electrons and holes excited over the Peierls gap. Instead, the low-temperature Ohmic conduction is mostly provided by collective excitations having the activation energy about half of the Peierls gap value and shunting the contribution of electrons and holes.
Magnetic topological materials are a class of compounds with the underlying interplay of nontrivial band topology and magnetic spin configuration. Extensive interests have been aroused due to their application potential involved with an array of exotic quantum states. With angle-resolved photoemission spectroscopy and first-principles calculations, here we study the electronic properties of two magnetic Weyl semimetal candidates PrAlSi and SmAlSi. Though the two compounds harbor distinct magnetic ground states (ferromagnetic and antiferromagnetic for PrAlSi and SmAlSi, respectively) and 4$f$ s…
X-ray magnetic circular dichroism (XMCD) measurements on single-crystal and powder samples of Ba$_{0.6}$K$_{0.4}$Mn$_{2}$As$_{2}$ show that the ferromagnetism below $T_{\textrm{C}}\approx$ 100 K arises in the As $4p$ conduction band. No XMCD signal is observed at the Mn x-ray absorption edges. Below $T_{\textrm{C}}$, however, a clear XMCD signal is found at the As $K$ edge which increases with decreasing temperature. The XMCD signal is absent in data taken with the beam directed parallel to the crystallographic $\textrm{c}$ axis indicating that the orbital magnetic moment lies in the basal pla…
The electron-conduction properties of fullerene chains are examined by first-principles calculations based on the density functional theory. The conductivity of the C$_{60}$ dimer is low owing to the constraint of the junction of the molecules on electron conduction, whereas the C$_{60}$ monomer exhibits a conductance of $\sim$ 1 G$_0$. One of the three degenerate $t_{u1}$ states of C$_{60}$ is relevant to conduction and the contributions of the others are small. In addition, we found a more interesting result that the conductance of the fullerene chain is drastically increased by encapsuling …
The relaxation time of a classical spin interacting with a large conduction-electron system is computed for a weak magnetic field, which initially drives the spin out of equilibrium. We trace the spin and the conduction-electron dynamics on a time scale, which exceeds the characteristic electronic scale that is set by the inverse nearest-neighbor hopping by more than five orders of magnitude. This is achieved with a novel construction of absorbing boundary conditions, which employs a generalized Lindblad master-equation approach to couple the edge sites of the conduction-electron tight-binding…
The mutual dependence of spin-dependent conduction and magnetization dynamics of ferromagnets provides the key mechanisms in various spin-dependent phenomena. We compute the response of the conduction electron spins to a spatial and time varying magnetization ${\bf M} ({\bf r},t)$ within the time-dependent semiclassical transport theory. We show that the induced non-equilibrium conduction spin density in turn generates four spin torques acting on the magnetization--with each torque playing different roles in magnetization dynamics. By comparing with recent theoretical models, we find that one …
We derive a spin-dependent Hamiltonian that captures the symmetry of the zone edge states in silicon. We present analytical expressions of the spin-dependent states and of spin relaxation due to electron-phonon interactions in the multivalley conduction band. We find excellent agreement with experimental results. Similar to the usage of the Kane Hamiltonian in direct band-gap semiconductors, the new Hamiltonian can be used to study spin properties of electrons in silicon.
Multishell helical gold nanowires (HGNs) suspended between semi-infinite electrodes are found to exhibit peculiar electron-conduction properties by first-principles calculations based on the density functional theory. Our results that the numbers of conduction channels in the HGNs and their conductances are smaller than those expected from a single-atom-row nanowire verify the recent experiment. In addition, we obtained a more striking result that in the cases of thin HGNs, distinct magnetic fields are induced by the electron current helically flowing around the shells. This finding indicates …
We investigate the intrinsic spin relaxation of conduction electrons in germanium due to electron-phonon scattering. We derive intravalley and intervalley spin-flip matrix elements for a general spin orientation and quantify the resulting anisotropy in spin relaxation. The form of the intravalley spin-flip matrix element is derived from the eigenstates of a compact spin-dependent $\mathbf{k}$$\cdot$$\mathbf{p}$ Hamiltonian in the vicinity of the $L$ point (where thermal electrons are populated in Ge). Spin lifetimes from analytical integrations of the intravalley and intervalley matrix element…
The bulk of topological insulators is relatively unexplored due to excess contribution of conduction from native defects. Here we investigate the bulk conduction in a Bi2Te3 crystal having reduced defect induced conduction. Our results uncover the presence of three transport regimes which are dominated by thermal activation across bulk band gap, defect state charge conduction, and quantum coherent transport. The low temperature conductance and magnetoconductance reveal the presence of multichannel two dimensional quantum coherent transport in the bulk. The number of channels are of the order o…
The knowledge of electron g factor is essential for spin manipulation in the field of spintronics and quantum computing. While there exist technical difficulties in determining the sign of g factor in semiconductors by the established magneto-optical spectroscopic methods. We develop a time resolved Kerr rotation technique to precisely measure the sign and the amplitude of electron g factor in semiconductors.
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin relaxation over a wide temperature range, suppressing the significance of the intravalley spin-flip scattering, previously considered dominant, above roughly 120 K. The calculated spin relaxation times $T_1$ agree with the spin resonance and spin injection data, following a $T^{-3}$ temperature dependence. The valley anisotropy of $T_1$ and the spin relaxation r…
Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each spin relaxation mechanism is compared and the diagrams showing the dominant mechanism are constructed as a function of temperature and impurity concentrations. Our approach is based upon theoretical calculation of the momentum relaxation rate and allows understanding of the interplay between various factors affecting the spin relaxation over a broad range of te…
The magnetization of a non-magnetic semiconductor by femtosecond light pulses is crucial to achieve an all-optical control of the spin dynamics in materials and to develop faster memory devices. However, the conditions for its detection are largely unknown. In this work we identify the criteria for the observation of ultrafast magnetization and critically discuss the difficulties hindering its experimental detection. We show that ultrafast magnetization of a non magnetic semiconductor can be observed in compounds with very localized conduction band states and more delocalized valence bands, su…
Relaxation of conduction electron spins in a semiconductor owing to the hyperfine interaction with spin-1/2 nuclei, in zero applied magnetic field, is investigated. We calculate the electron spin relaxation time scales, in order to evaluate the importance of this relaxation mechanism. Master equations for the electron spin density matrix are derived and solved. Polarized nuclear spins can be used to polarize the electrons in spintronic devices.
Electron conduction through quasi-one-dimensional (1D) indium atomic wires on silicon (the Si(111)-4x1-In reconstruction) is clarified with the help of local structural analysis using scanning tunneling microscopy. The reconstruction has a conductance per square as high as 100 uS, with global conduction despite numerous surface steps. A complete growth of indium wires up to both the surface steps and the lithographically printed electrodes is essential for the macroscopic transport. The system exhibits a metal-insulator transition at 130 K, consistent with a recent ultraviolet photoemission st…
Pyrochlore oxides possessing "all-in-all-out" spin ordering have attracted burgeoning interest as a rich ground of emergent states. This ordering has two distinct types of magnetic domains (all-in-all-out or all-out-all-in) with broken time-reversal symmetry, and a non-trivial metallic surface state has been theoretically demonstrated to appear at their domain wall. Here, we report on observation of this metallic conduction at the single all-in-all-out/all-out-all-in magnetic domain wall formed at the heterointerface of two pyrochlore iridates. By utilizing different magnetoresponses of them w…
The transfer of electrons between a solid surface and adsorbed atomic or molecular species is fundamental in natural and synthetic processes, being at the heart of most catalytic reactions and many sensors. In special cases, metallic conduction can be induced at the surface of, for example, Si-terminated SiC1, or mixed-terminated ZnO2, in the presence of a hydrogen adlayer. Generally, only the surface atoms are significantly affected by adsorbates. However, remotely changing electronic states far from the adsorbed layer is possible if these states are electrostatically coupled to the surface. …
We present detailed first-principles calculations of the electron-conduction properties of a three-sodium-atom nanowire suspended between semi-infinite crystalline Na(001) electrodes during its elongation. Our investigations reveal that the conductance is ~1 G0 before the nanowire breaks and only one channel with the characteristic of the $3s$ orbital of the center atom in the nanowire contributes to the electron conduction. Moreover, the channel fully opens around the Fermi level, and the behavior of the channel-current density is insensitive to the structural deformation of the nanowire. The…
We review magneto-optical and magneto-transport effects in GaAs/GaAlAs heterostructures doped in GaAlAs barriers with donors, providing two-dimensional electron gas in GaAs quantum wells, and additionally doped with smaller amounts of acceptors (mostly Be atoms) in the vicinity of 2DEG. One may also deal with residual acceptors (mostly C atoms). The behavior of such systems in the presence of a magnetic field differs appreciably from those doped in the vicinity of 2DEG with donors.
Ferromagnetic resonance in conducting magnetic bilayers was studied using microstrip transducers. It was found that excitation or suppression of standing spin waves could be achieved through enhanced inhomogeneity of eddy currents in the bilayer caused by finite thickness. This effect is observable in films with thicknesses below the magnetic skin depth and can be used to study standing spin wave modes in heterostructures.
Experimental evidence explaining the extremely low-threshold electron emission from diamond reported in 1996 has been obtained for the first time. Direct observation using combined ultraviolet photoelectron spectroscopy/field emission spectroscopy (UPS/FES) proved that the origin of field-induced electron emission from heavily nitrogen (N)-doped chemical vapour deposited (CVD) diamond was at conduction band minimum (CBM) utilising negative electron affinity (NEA). The significance of the result is that not only does it prove the utilisation of NEA as the dominant factor for the extremely low-t…
We describe a scheme for first-principles calculations of the static, paramagnetic, spin susceptibility of metals with relativistic effects such as spin-orbit coupling included. This gives the direction for an applied modulated magnetic field to maximise its response. This easy axis depends on the modulation's wave-vector q. For h.c.p. yttrium we find the peak response at a q= (0,0,0.57)pi/c, coincident with a Fermi surface nesting vector, to have an easy axis perpendicular to q. This is consistent with the {\it helical} anti-ferromagnetic order found in many dilute rare earth-Yalloys. Convers…
We investigate the temperature evolution of the electronic structure of ferromagnetic CaB$_6$ using ultra-high resolution photoemission spectroscopy; electronic structure of paramagnetic LaB$_6$ is used as a reference. High resolution spectra of CaB$_6$ reveal finite density of states at the Fermi level, $ε_F$ at all the temperatures and evidence of impurity induced localized features in the vicinity of $ε_F$, which are absent in the spectra of LaB$_6$. Analysis of the high resolution spectra suggests that disorder in B-sublattice inducing partial localization in the mobile electrons and low e…
Characterizing the frequency-dependent response of amorphous systems and glasses can provide important insights into their physics. Here, we study the response of an electron glass, where Coulomb interactions are important and have previously been shown to significantly modify the conductance and lead to memory effects and aging. We propose a model which allows us to take the interactions into account in a self-consistent way, and explore the frequency-dependent conduction at all frequencies. At low frequencies conduction occurs on the percolation backbone, and the model captures the variable-…
We present first-principles band calculations as well as structural optimization of the orthorhombic K$_1$C$_{60}$ polymerized phase. We found three-dimensional inter-fullerene bonding/anti-bonding characters consisting of $t_{1u}$ molecular orbitals with $p$-like symmetry in the conduction bands. The formation of the four-membered ring connecting the fullerenes lifts the $p_x$ band from the continuous $p_y$-$p_z$ band, where the z-axis is parallel to the chain. The asymmetry between $p_x$ and $p_y$ may play an important role in binding the chains with the rotational configuration proposed by …
The theory of spin relaxation of conduction electrons is developed for zinc-blende-type quantum wells grown on (110)-oriented substrate. It is shown that, in asymmetric structures, the relaxation of electron spin initially oriented along the growth direction is characterized by two different lifetimes and leads to the appearance of an in-plane spin component. The magnitude and sign of the in-plane component are determined by the structure inversion asymmetry of the quantum well and can be tuned by the gate voltage. In an external magnetic field, the interplay of cyclotron motion of carriers an…
Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the crystal structure. Many experimental and theoretical works have focused on the spin-orbit interaction which couples the valley and spin degree of freedom so that the spin-states can be electrically controllable. However, the spin-states of charge carriers and vacancies have not been yet elucidated directly from a microscopic viewpoint. We report the spin-states in thin-film electric double-layer transistors using operando…
We show that resonant electron transport in semiconductor superlattices with an applied electric and tilted magnetic field can, surprisingly, become more pronounced as the lattice and conduction electron temperature increases from 4.2 K to room temperature and beyond. It has previously been demonstrated that at certain critical field parameters, the semiclassical trajectories of electrons in the lowest miniband of the superlattice change abruptly from fully localised to completely unbounded. The unbounded electron orbits propagate through intricate web patterns, known as stochastic webs, in ph…
Using the Green functions method we study transport properties of surface electrons in topological insulators in the presence of a correlated random exchange field. Such an exchange field may be due to random magnetization with correlated fluctuations. We determine the relaxation time due to scattering from the magnetization fluctuations and from other structural defects. Then we calculate the longitudinal charge conductivity taking into account the contribution due to vertex correction.
Bare reverse biased silicon photodiodes were exposed to 3eV He+, Ne+, Ar+, N2+, N+ and H2O+ ions. In all cases an increase of the reverse current through the diode was observed. This effect and its dependence on the ionization energy of the incident ions and on other factors are qualitatively explained in the framework of Auger-type surface neutralization theory. Amplification of the ion-induced charge was observed with an avalanche photodiode under high applied bias. The observed effect can be considered as ion-induced internal potential electron emission into the conduction band of silicon. …
We have studied the feasibility of electron conduction in azulene molecule and compared with that in its isomer naphthalene. We have used non-equilibrium Green's function formalism to measure the current in our systems as a response of the external electric field. Parallely we have performed the Gaussian calculations with electric field in the same bias window to observe the impact of external bias on the wave functions of the systems. We have found that, the conduction of azulene is higher than that of naphthalene inspite of its intrinsic donor-acceptor property, which leads a system to more …
From measurements of the current-perpendicular-to-plane (CPP) magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers, within sputtered Permalloy-based double exchange biased spin-valves, we determine the parameter delta[(Co(90)Fe(10))/Cu] = 0.19 +/- 0.04 that sets the probability P of spin-flipping at a Co(90)Fe(10)/Cu interface via the equation P = 1 - exp(-delta).
Nonlinear current voltage characteristics and in some cases also step like characteristics were observed in diamond like carbon films. We suggest that the transport mechanism is tunneling between conducting nanoparticles in the films and the observation of step like structures is a manifestation of Coulomb blockade found for the first time in these films. We point out that the origin of similar current voltage characteristics observed in other carbon structures can be also Coulomb blockade phenomenon.
The low-field electron diffusion, noise, and the conduction in amorphous chalcogenides are investigated by means of a Monte Carlo implementation of a full three- dimensional variable-range hopping transport model between localized states. Quantities like the carrier-velocity autocorrelation function, the noise power spectrum, the diffusion coefficient and the ohmic conductivity are obtained from numerical simulations at room temperatures and lower. Some interesting features of the linear-response regime typical of hopping transport are observed and discussed for the case of the amorphous Ge2Sb…
Concerning with the recent experiment of time-resolved two-photon photo-emission spectral measurements on semiconductors (GaAs, InP), we theoretically study real time relaxation dynamics of macroscopically photo-excited electrons, toward the Fermi degeneracy formation in an originally vacant conduction band of these semiconductors. Very soon after the photo-excitation, the whole electrons are shown to exhibit a quite rapid relaxation, like an avalanching phenomenon, mainly due to successive multi-(optical and acoustic) phonon emission from them. Repeating this multi-phonon process, the whole e…
We present results of electrical conduction studies of Ti/TiOx/Ti planar structures prepared by tip-induced local anodic oxidation (LAO) of titanium thin films. The prepared structures have shown almost linear I-V curves at temperatures between 300 K and 30 K, and only slight deviation from linear behaviour at lower temperatures. Electrical conductance of the structures can be adequately explained by a two-channel model where variable range hopping channels and metallic ones coexist in parallel, while a crossover from Mott to Efros-Shklovskii variable-range-hopping conductivity has been observ…
The anomalous Hall effect is mainly used to probe the magnetization orientation in ferromagnetic materials. A less explored aspect is the torque acting back on magnetization, an effect that can be important at high currents. The spin-orbit coupling of the conduction electrons causes spin-up and spin-down electrons to scatter to opposite sides when a charge current flows in the sample. This is equivalent to a spin current with orientation and flow perpendicular to the driving charge current, leading to a non-equilibrium spin accumulation that exerts a torque on the bulk magnetization through th…
Excited conduction electrons, conduction holes, and valence holes in monolayer electron-doped graphene exhibit unusual Coulomb decay rates. The deexcitation processes are studied using the screened exchange energy. They might utilize the intraband single-particle excitations (SPEs), the interband SPEs, and the plasmon modes, depending on the quasiparticle states and the Fermi energies. The low-lying valence holes can decay through the undamped acoustic plasmon, so that they present very fast Coulomb deexcitations, nonmonotonous energy dependence, and anisotropic behavior. However, the low-ener…
In the framework of density functional theory (DFT) calculations we investigate the electronic and thermal properties of porous graphene (PG) structures passivated with halogen atoms as possible candidates for efficient thermoelectric devices. Armchair and zig-zag halogenated PG nanoribbons are analyzed comparatively. The electronic properties are consistent with the expected behavior for the two types of terminations, however with marked influences introduced by the different halogen atoms. Depending on the pore sizes and halogen type pseudo-gaps in the phononic band structure are visible in …
One of the main tasks in the investigation of 2-dimensional transition metal dichalcogenides is the determination of valley lifetimes. In this work, we combine time-resolved Kerr rotation with electrical transport measurements to explore the gate-dependent valley lifetimes of free conduction band electrons of monolayer WSe$_2$. When tuning the Fermi energy into the conduction band we observe a strong decrease of the respective valley lifetimes which is consistent with both spin-orbit and electron-phonon scattering. We explain the formation of a valley polarization by the scattering of opticall…
In this work we address the ground state magnetization in graphene, considering the Zeeman effect and taking into account the conduction electrons in the long wavelength approximation. We obtain analytical expressions for the magnetization at T=0 K, where the oscillations given by the de Haas van Alphen (dHvA) effect are present. We find that the Zeeman effect modifies the magnetization by introducing new peaks associated with the spin splitting of the Landau levels. These peaks are very small for typical carrier densities in graphene, but become more important for higher densities. The obtain…
We have performed terahertz time-domain spectroscopy of carrier-doped nanoporous crystal 12CaO7Al2O3 showing the Mott variable range hopping at room temperature. The real part of the dielectric constant clearly demonstrates the nature of localized carriers. The frequency dependence of both the real and imaginary parts of the dielectric constant can be simply explained by assuming two contributions: a dielectric response by the parent compound with no carriers and an AC hopping conduction with the Jonscher law generally reported up to GHz range. The possible obedience to the Jonscher law in the…
