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arXiv 2008.05062cond-mat.mtrl-sciastro-ph.HEastro-ph.IMhep-exhep-ph
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用于暗物质探测的可调谐自旋轨道能隙材料的预测

Prediction of Tunable Spin-Orbit Gapped Materials for Dark Matter Detection

Katherine Inzani, Alireza Faghaninia, Sinéad M. Griffin

摘要:

低质量暗物质直接探测的新想法表明,窄带隙材料,如狄拉克半导体,对meV暗物质的吸收或keV暗物质的散射敏感。在这里,我们提出自旋轨道半导体-材料的带隙出现由于自旋轨道耦合-作为低质量的暗物质的目标,由于其~10 meV的带隙。我们提出了三种材料的家庭,预计将使用密度泛函理论(DFT)的自旋轨道半导体,评估其电子和拓扑特征,并评估其作为低质量的暗物质的目标。特别是,我们发现,锡磷属元素化物化合物是特别合适的具有可调范围的兆电子伏级的带隙与各向异性费米速度允许定向检测。最后,我们解决的陷阱,必须考虑在从头计算预测的窄间隙材料,包括那些接近拓扑临界点的DFT方法。

英文摘要:

New ideas for low-mass dark matter direct detection suggest that narrow band gap materials, such as Dirac semiconductors, are sensitive to the absorption of meV dark matter or the scattering of keV dark matter. Here we propose spin-orbit semiconductors - materials whose band gap arises due to spin-orbit coupling - as low-mass dark matter targets owing to their ~10 meV band gaps. We present three material families that are predicted to be spin-orbit semiconductors using Density Functional Theory (DFT), assess their electronic and topological features, and evaluate their use as low-mass dark matter targets. In particular, we find that that the tin pnictide compounds are especially suitable having a tunable range of meV-scale band gaps with anisotropic Fermi velocities allowing directional detection. Finally, we address the pitfalls in the DFT methods that must be considered in the ab initio prediction of narrow-gapped materials, including those close to the topological critical point.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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